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Application of CL/EBIC-SEM Techniques for Characterization of Radiation Effects in Multijunction Solar Cells

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3095-3100

2010

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Thin GaAs Solar Cells For High Irradiation Levels

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019, p.2814-2817

2019

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Electron Channeling Contrast Imaging for Non-Destructive Analysis of Extended Defects in Semiconductor Thin Films and Device Structures

Microscopy and microanalysis, 2014-08, Vol.20 (S3), p.1064-1065

2014

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FIB/TEM Investigation of crystallographic defects in type-II superlattice based infrared detectors

Microscopy and microanalysis, 2012-07, Vol.18 (S2), p.1806-1807

2012

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CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

Materials science forum, 2010-04, Vol.645-648, p.211-214

2010

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The distribution function of the variance of Allan: theory and practice

Izmeritel`naya Tekhnika, 2018 (6), p.20-25

MAXIMENKO, S. G.

2018

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Open Core Dislocations and Surface Energy of SiC

Materials science forum, 2006-10, Vol.527-529, p.439-442

2006

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Evolution of D1-Defect Center in 4H-SiC during High Temperature Annealing

Materials science forum, 2009, Vol.600-603, p.429-432

2009

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Structure and Orientation Determination of Metal-Oxide Nanostructures by Electron Backscatter Diffraction

Microscopy and microanalysis, 2009-07, Vol.15 (S2), p.402-403

2009

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Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Materials science forum, 2009-01, Vol.600-603, p.549-552

2009

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Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes

Materials science forum, 2006-10, Vol.527-529, p.367-370

2006

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Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

Materials science forum, 2006-10, Vol.527-529, p.371-374

2006

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Application of CL/EBIC-SEM techniques for characterization of irradiation induced defects in triple junction solar cells

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.001753-001758

2010

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Cathodoluminescence Studies of the Inhomogeneities in Sn-doped Ga 2 O 3 Nanowires

Nano letters, 2009-09, Vol.9 (9), p.3245-3251

2009

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Effect of threading screw and edge dislocations on transport propertiesof 4H-SiC homoepitaxial layers

Journal of applied physics, 2010-07, Vol.108 (1), p.013708-013708-6

2010

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High-temperature (450°C) operation of InGaP solar cell under N2 ambient using refractory metal contacts

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 2016, p.2337-2340

2016

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High band gap solar cells for underwater Photovoltaic applications

2012 38th IEEE Photovoltaic Specialists Conference, 2012, p.002061-002064

2012

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Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing: Group III Nitrides, SiC, and ZnO

Journal of electronic materials, 2009, Vol.38 (4), p.551-556

2009

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Optimization of electrical performance of Cu(In,Ga)Se2 thin film solar cells sputtered from quaternary targets

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.1704-1706

2014

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Observation of dislocations in diffused 4H-SiC p - i - n diodesby electron-beam induced current

Journal of applied physics, 2004-12, Vol.97 (1), p.013533-013533-6

2004

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Cytostatic activity of combretastatin A-4 derivatives in the in vitro system

Bulletin of Experimental Biology and Medicine, 2022, Vol.174 (8), p.184-189

2022

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Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-ray Topography

Materials science forum, 2009-01, Vol.600-603

2009

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Effect of irradiation on gallium arsenide solar cells with multi quantum well structures

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.2144-2148

2014

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Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs

Materials science forum, 2006-10, Vol.527-529, p.427-430

2006

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Effect of crystal defects on reverse I-V characteristics of 4H-SiCAPDs

Materials science forum, 2006-01, Vol.527-529, p.427-430

2006

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Application of CL/EBIC-SEM Techniques for Characterization of Radiation Effects in Multijunction Solar Cells

Thin GaAs Solar Cells For High Irradiation Levels

Electron Channeling Contrast Imaging for Non-Destructive Analysis of Extended Defects in Semiconductor Thin Films and Device Structures

FIB/TEM Investigation of crystallographic defects in type-II superlattice based infrared detectors

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers

The distribution function of the variance of Allan: theory and practice

Open Core Dislocations and Surface Energy of SiC

Evolution of D1-Defect Center in 4H-SiC during High Temperature Annealing

Structure and Orientation Determination of Metal-Oxide Nanostructures by Electron Backscatter Diffraction

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography

Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes

Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

Application of CL/EBIC-SEM techniques for characterization of irradiation induced defects in triple junction solar cells

Cathodoluminescence Studies of the Inhomogeneities in Sn-doped Ga 2 O 3 Nanowires

Effect of threading screw and edge dislocations on transport propertiesof 4H-SiC homoepitaxial layers

High-temperature (450°C) operation of InGaP solar cell under N2 ambient using refractory metal contacts

High band gap solar cells for underwater Photovoltaic applications

Evolution of Deep Defect Centers in Semi-Insulating 4H-SiC Substrates under High-Temperature Annealing: Group III Nitrides, SiC, and ZnO

Optimization of electrical performance of Cu(In,Ga)Se2 thin film solar cells sputtered from quaternary targets

Observation of dislocations in diffused 4H-SiC p - i - n diodesby electron-beam induced current

Cytostatic activity of combretastatin A-4 derivatives in the in vitro system

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-ray Topography

Effect of irradiation on gallium arsenide solar cells with multi quantum well structures

Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs

Effect of crystal defects on reverse I-V characteristics of 4H-SiCAPDs

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