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Solar cell research and development using the hot wire CVD process

Solar energy, 2004-01, Vol.77 (6), p.931-938

Mahan, A.H.

2004

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Junction capacitance study of an oxygen impurity defect exhibiting configuration relaxation in amorphous silicon–germanium alloys deposited by hot-wire CVD

Journal of non-crystalline solids, 2008-05, Vol.354 (19-25), p.2126-2130

2008

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Superior structural and electronic properties for amorphous silicon–germanium alloys deposited by a low temperature hot wire chemical vapor deposition process

Journal of non-crystalline solids, 2006-06, Vol.352 (9-20), p.1250-1254

2006

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Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloys

Applied physics letters, 1987-02, Vol.50 (6), p.335-337

1987

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Observation of Improved Structural Ordering in Low H Content, Hot wire Deposited a-Si:H

MRS proceedings, 1997, Vol.467, p.657-662, Article 657

1997

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Optical determination of the mass density of amorphous and microcrystalline silicon layers with different hydrogen contents

Journal of non-crystalline solids, 1998-01, Vol.227, p.876-879

1998

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ESR Studies on Hot-Wire Amorphous Silicon

MRS proceedings, 1997, Vol.467, p.663-668, Article 663

1997

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Relative crystallite sizes for thermally annealed HWCVD A-Si:H films with and without a sub-threshold laser fluence

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.003702-003705

2010

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Publisher's Note: “Nucleation rate reduction through stress relief of thermally annealed hydrogenated amorphous silicon films” [J. Appl. Phys. 113, 173509 (2013)]

Journal of applied physics, 2013-07, Vol.114 (1)

2013

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Molecular hydrogen in amorphous silicon revisited

Journal of non-crystalline solids, 2000-05, Vol.266, p.195-200

2000

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Preface: Fifth International Conference on Hot-Wire CVD (Cat-CVD) Process

Thin solid films, 2009-01, Vol.517 (12, 2009)

2009

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Advances in amorphous silicon-based photonic technology

Journal of non-crystalline solids, 2002-04, Vol.299, p.1267-1271

2002

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Solar cell research and development using the hot wire CVD process: Thin film PV

Solar energy, 2004, Vol.77 (6), p.931-938

MAHAN, A. H

2004

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Defects in hot-wire deposited amorphous silicon: results from electron spin resonance

Journal of non-crystalline solids, 1998-05, Vol.227-230, p.362-366

1998

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Hot wire chemical vapor deposition of Si containing materials for solar cells: Critical review of amorphous and microcrystalline silicon materials and solar cells: special issue in honor of Stanford R. Ovshinsky

Solar energy materials and solar cells, 2003, Vol.78 (1-4), p.299-327

MAHAN, A. H

2003

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Structural Changes in a-Si:H Films Deposited on the Edge of Crystallinity

MRS proceedings, 1999, Vol.557, Article 269

1999

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Thermally induced metastable defect studies on hydrogenated amorphous silicon films with different hydrogen contents

Journal of non-crystalline solids, 1995-10, Vol.190 (1), p.163-168

1995

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Deposition of device quality, low H content a-Si:H by the hot wire technique

Journal of non-crystalline solids, 1991, Vol.137, p.657-660

1991

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Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVD

MRS proceedings, 1999, Vol.557, Article 163

1999

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Low Hydrogen Content, High Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD

MRS proceedings, 1999, Vol.557, Article 97

1999

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Dependence of the Electronic Properties of Hot-Wire CVD Amorphous Silicon-Germanium Alloys on Oxygen Impurity Levels

MRS proceedings, 2007, Vol.989, Article 0989-A04-03

2007

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The structure of a-Si:H by small angle x-ray scattering

Journal of non-crystalline solids, 1991, Vol.137, p.65-70

1991

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On the role of hydrogen in metastable defect equilibration in undoped hydrogenated amorphous silicon

Journal of non-crystalline solids, 1993-12, Vol.164, p.335-338

1993

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Rapid thermal annealing of hot wire chemical-vapor-deposited a - Si : H films: The effect of the film hydrogen contenton the crystallization kinetics, surface morphology,and grain growth

Journal of applied physics, 2006-01, Vol.99 (2), p.023507-023507-9

2006

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Crystalline WO 3 Nanoparticles for Highly Improved Electrochromic Applications

Advanced materials (Weinheim), 2006-03, Vol.18 (6), p.763-766

2006

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Solar cell research and development using the hot wire CVD process

Junction capacitance study of an oxygen impurity defect exhibiting configuration relaxation in amorphous silicon–germanium alloys deposited by hot-wire CVD

Superior structural and electronic properties for amorphous silicon–germanium alloys deposited by a low temperature hot wire chemical vapor deposition process

Influence of microstructure on the photoconductivity of glow discharge deposited amorphous SiC:H and amorphous SiGe:H alloys

Observation of Improved Structural Ordering in Low H Content, Hot wire Deposited a-Si:H

Optical determination of the mass density of amorphous and microcrystalline silicon layers with different hydrogen contents

ESR Studies on Hot-Wire Amorphous Silicon

Relative crystallite sizes for thermally annealed HWCVD A-Si:H films with and without a sub-threshold laser fluence

Publisher's Note: “Nucleation rate reduction through stress relief of thermally annealed hydrogenated amorphous silicon films” [J. Appl. Phys. 113, 173509 (2013)]

Molecular hydrogen in amorphous silicon revisited

Preface: Fifth International Conference on Hot-Wire CVD (Cat-CVD) Process

Advances in amorphous silicon-based photonic technology

Solar cell research and development using the hot wire CVD process: Thin film PV

Defects in hot-wire deposited amorphous silicon: results from electron spin resonance

Hot wire chemical vapor deposition of Si containing materials for solar cells: Critical review of amorphous and microcrystalline silicon materials and solar cells: special issue in honor of Stanford R. Ovshinsky

Structural Changes in a-Si:H Films Deposited on the Edge of Crystallinity

Thermally induced metastable defect studies on hydrogenated amorphous silicon films with different hydrogen contents

Deposition of device quality, low H content a-Si:H by the hot wire technique

Assessment of Intrinsic-Layer Growth Temperature to High-Deposition-Rate a-Si:H n-i-p Solar Cells Deposited by Hot-Wire CVD

Low Hydrogen Content, High Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD

Dependence of the Electronic Properties of Hot-Wire CVD Amorphous Silicon-Germanium Alloys on Oxygen Impurity Levels

The structure of a-Si:H by small angle x-ray scattering

On the role of hydrogen in metastable defect equilibration in undoped hydrogenated amorphous silicon

Rapid thermal annealing of hot wire chemical-vapor-deposited a - Si : H films: The effect of the film hydrogen contenton the crystallization kinetics, surface morphology,and grain growth

Crystalline WO 3 Nanoparticles for Highly Improved Electrochromic Applications

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