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Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET

IEEE electron device letters, 2019-04, Vol.40 (4), p.510-513

2019

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Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.479-485

2024

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Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects

IOP conference series. Materials Science and Engineering, 2019, Vol.504 (1)

2019

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Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET

IEEE electron device letters, 2013-02, Vol.34 (2), p.205-207, Article 205

2013

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The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12065

2015

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Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold

Journal of low-power electronics, 2015-06, Vol.11 (2), p.256-262

2015

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Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO 2 interface charges and quantum mechanical effects

IOP conference series. Materials Science and Engineering, 2019-04, Vol.504, p.12021

2019

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Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length

Journal of physics. Conference series, 2010-07, Vol.242 (1), p.012011

2010

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Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7 As MOSFETs

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012122

2009

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Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

Solid-state electronics, 2018-04, Vol.142 (C)

2018

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Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

IEEE transactions on computer-aided design of integrated circuits and systems, 2011-06, Vol.30 (6), p.841-851

2011

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Self-forces in 3D finite element Monte Carlo simulations of a 10.7 nm gate length SOI FinFET

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014, p.185-188

2014

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Monte Carlo Simulation of Implant Free InGaAs MOSFET

Journal of physics. Conference series, 2006-05, Vol.38 (1), p.200-203

2006

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Simulation study of scaled In 0.53 Ga 0.47 As and Si FinFETs for sub-16 nm technology nodes

Semiconductor science and technology, 2016-07, Vol.31 (7), p.75005

2016

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Impact of strain on scaling of Double Gate nanoMOSFETs using NEGF approach

Physica status solidi. C, 2008-01, Vol.5 (1), p.47-51

2008

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Current variations in PHEMTS introduced by channel composition fluctuations

Journal of physics. Conference series, 2006-05, Vol.38 (1), p.212-215

2006

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Impact of cross-section of 10.4 nm gate length Ino.53Gao.47As FinFETs on metal grain variability

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, p.241-244

2016

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Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In 0.53 Ga 0.47 As GAA MOSFET

IEEE electron device letters, 2013-02, Vol.34 (2), p.205-207

2013

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Quantum Corrections in the Monte Carlo Simulations of Scaled PHEMTs with Multiple Delta Doping

Journal of computational electronics, 2002-07, Vol.1 (1-2), p.257-261

2002

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The Current Crowding Effect in ZnO Nanowires with a Metal Contact

Materials today : proceedings, 2015, Vol.2 (1), p.309-314

2015

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Monte Carlo Study of Ultimate Channel Scaling in Si and In Ga As Bulk MOSFETs

IEEE transactions on nanotechnology, 2011-11, Vol.10 (6), p.1424-1432

2011

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Influence of stress concentrators on the fatigue and fracture characteristics of steels and welded joints

Materials science (New York, N.Y.), 1998-09, Vol.34 (5), p.696-700

Kálna, K.

1998

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Self-consistent analysis of carrier-transport and carrier-capture dynamics in quantum cascade intersubband semiconductor lasers

IEEE transactions on microwave theory and techniques, 2000-04, Vol.48 (4), p.639-644

2000

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MC/DD study of metal grain induced current variability in a nanoscale InGaAs FinFET

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2014, p.253-256

2014

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Process Flow Modelling and Characterisation of Stacked Gate-All-Around Nanosheet Transistors

2022 IEEE 22nd International Conference on Nanotechnology (NANO), 2022, p.271-274

2022

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Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET

Scaling Challenges of Nanosheet Field-Effect Transistors Into Sub-2 nm Nodes

Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects

Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53Ga0.47As GAA MOSFET

The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold

Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO 2 interface charges and quantum mechanical effects

Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length

Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7 As MOSFETs

Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

Self-forces in 3D finite element Monte Carlo simulations of a 10.7 nm gate length SOI FinFET

Monte Carlo Simulation of Implant Free InGaAs MOSFET

Simulation study of scaled In 0.53 Ga 0.47 As and Si FinFETs for sub-16 nm technology nodes

Impact of strain on scaling of Double Gate nanoMOSFETs using NEGF approach

Current variations in PHEMTS introduced by channel composition fluctuations

Impact of cross-section of 10.4 nm gate length Ino.53Gao.47As FinFETs on metal grain variability

Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In 0.53 Ga 0.47 As GAA MOSFET

Quantum Corrections in the Monte Carlo Simulations of Scaled PHEMTs with Multiple Delta Doping

The Current Crowding Effect in ZnO Nanowires with a Metal Contact

Monte Carlo Study of Ultimate Channel Scaling in Si and In Ga As Bulk MOSFETs

Influence of stress concentrators on the fatigue and fracture characteristics of steels and welded joints

Self-consistent analysis of carrier-transport and carrier-capture dynamics in quantum cascade intersubband semiconductor lasers

MC/DD study of metal grain induced current variability in a nanoscale InGaAs FinFET

Process Flow Modelling and Characterisation of Stacked Gate-All-Around Nanosheet Transistors

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