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28SiO2-Based Isotopically Enriched Silica Fiber

Inorganic materials, 2023-06, Vol.59 (6), p.591-596

2023

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Investigation of the thermo stability of aluminum thin-film filters with protective MoSi 2 cap layers

Applied optics (2004), 2019-01, Vol.58 (1), p.21

2019

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SIMS Analysis of Carbon-Containing Materials: Content of Carbon Atoms in sp2 and sp3 Hybridization States

Technical physics letters, 2020, Vol.46 (3), p.290-294

2020

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Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (9), p.1047-1050

2020

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Growth of arsenic-doped cadmium telluride epilayers by metalorganic chemical vapor deposition

Inorganic materials, 2016-12, Vol.52 (12), p.1210-1214

2016

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Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”

Semiconductors (Woodbury, N.Y.), 2017, Vol.51 (8), p.1106-1106

2017

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Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS and C-V profiling

Bulletin of the Russian Academy of Sciences. Physics, 2012-02, Vol.76 (2), p.221-224

2012

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Growth and properties of GaAs and GaN films and low-dimensional GaAs/QWsInGaAs structures on Si substrates with a Ge buffer layer

Bulletin of the Russian Academy of Sciences. Physics, 2012-09, Vol.76 (9), p.1036-1040

2012

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Epitaxial films of GeSi, AlGaN, and GaSb and GaSb/InAs superlattices on substrates of fianite

Bulletin of the Russian Academy of Sciences. Physics, 2011-09, Vol.75 (9), p.1221-1226

2011

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Fianite: A multipurpose electronics material

Bulletin of the Russian Academy of Sciences. Physics, 2010-07, Vol.74 (7), p.1027-1033

2010

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Phase transformations and ordering effects in nanocrystalline carbon-containing silicon films

Bulletin of the Russian Academy of Sciences. Physics, 2009-07, Vol.73 (7), p.978-981

2009

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Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

Поверхность. Рентгеновские, синхротронные и нейтронные исследования, 2024-09 (5), p.61-68

2024

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Modification of the Ratio between sp.sup.2- to sp.sup.3-Hybridized Carbon Components in PECVD Diamond-Like Films

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1047

2020

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Pulsed Laser Irradiation of Light-Emitting Structures with a

Physics of the solid state, 2021-11, Vol.63 (11), p.1593

2021

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Multilayer thin-film filters of extreme ultraviolet and soft X-ray spectral regions

Bulletin of the Russian Academy of Sciences. Physics, 2010, Vol.74 (1), p.46-49

2010

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Heteroepitaxial III–V films on fianite substrates and buffer layers

Bulletin of the Russian Academy of Sciences. Physics, 2009-04, Vol.73 (4), p.485-490

2009

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Heteroepitaxial GaN films on silicon substrates with porous buffer layers

Bulletin of the Russian Academy of Sciences. Physics, 2008-11, Vol.72 (11), p.1499-1503

2008

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Optical investigation of as-grown NV centers in heavily nitrogen doped delta layers in CVD diamond

Materials today communications, 2020-09, Vol.24, p.101019, Article 101019

2020

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Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge Substrates

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1318

2019

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Production of double-layer epitaxial structures based on the solid solution of the Cd-Hg-Te system using a combination of LPE and MOCVD techniques

Inorganic materials, 2008-12, Vol.44 (12), p.1305-1311

2008

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TOF-SIMS study on surface modification of reed switch blades by pulsing nitrogen plasma

Applied surface science, 2013, Vol.265, p.642-647

2013

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Quantitative calibration and germanium SIMS depth profiling in Ge x Si1 − x /Si heterostructures

Semiconductors (Woodbury, N.Y.), 2014-08, Vol.48 (8), p.1109-1117

2014

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Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1449-1452

2017

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99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Journal of crystal growth, 2019-03, Vol.509, p.1-7

2019

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Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11)

2015

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28SiO2-Based Isotopically Enriched Silica Fiber

Investigation of the thermo stability of aluminum thin-film filters with protective MoSi 2 cap layers

SIMS Analysis of Carbon-Containing Materials: Content of Carbon Atoms in sp2 and sp3 Hybridization States

Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films

Growth of arsenic-doped cadmium telluride epilayers by metalorganic chemical vapor deposition

Erratum to: “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”

Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS and C-V profiling

Growth and properties of GaAs and GaN films and low-dimensional GaAs/QWsInGaAs structures on Si substrates with a Ge buffer layer

Epitaxial films of GeSi, AlGaN, and GaSb and GaSb/InAs superlattices on substrates of fianite

Fianite: A multipurpose electronics material

Phase transformations and ordering effects in nanocrystalline carbon-containing silicon films

Complex Diagnostics of Silicon-on-Insulator Layers after Ion Implantation and Annealing

Modification of the Ratio between sp.sup.2- to sp.sup.3-Hybridized Carbon Components in PECVD Diamond-Like Films

Pulsed Laser Irradiation of Light-Emitting Structures with a

Multilayer thin-film filters of extreme ultraviolet and soft X-ray spectral regions

Heteroepitaxial III–V films on fianite substrates and buffer layers

Heteroepitaxial GaN films on silicon substrates with porous buffer layers

Optical investigation of as-grown NV centers in heavily nitrogen doped delta layers in CVD diamond

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge Substrates

Production of double-layer epitaxial structures based on the solid solution of the Cd-Hg-Te system using a combination of LPE and MOCVD techniques

TOF-SIMS study on surface modification of reed switch blades by pulsing nitrogen plasma

Quantitative calibration and germanium SIMS depth profiling in Ge x Si1 − x /Si heterostructures

Low-temperature deposition of SiNx Films in SiH4/Ar + N2 inductively coupled plasma under high silane dilution with argon

99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Si{sub 3}N{sub 4} layers for the in-situ passivation of GaN-based HEMT structures

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