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Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

IEEE electron device letters, 2020-04, Vol.41 (4), p.601-604

2020

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IEEE_Xplore

Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

IEEE electron device letters, 2019-02, Vol.40 (2), p.185-188

2019

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IEEE_Xplore

Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2310-2317

2024

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IEEE_Xplore

High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

IEEE transactions on microwave theory and techniques, 2023-02, Vol.71 (2), p.898-906

2023

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IEEE_Xplore

Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Diamond and related materials, 2017-03, Vol.73, p.1-6

2017

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Mechanism on BiVO4 photoanode photoelectrochemical performance improving: Based on surface electrochemical reduction method

Electrochimica acta, 2021-01, Vol.366, p.137288, Article 137288

2021

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GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

IEEE journal of the Electron Devices Society, 2014-11, Vol.2 (6), p.168-173

2014

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Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.134-139

2020

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454

2022

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Conductive polymer nanolayer modified one-dimensional ZnO/CdSe photoanode with enhanced photoelectrochemical properties by in-situ ions exchange method

Chemical engineering journal (Lausanne, Switzerland : 1996), 2019-07, Vol.368, p.710-718

2019

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.n/a

2022

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Crystal-reconstructed BiVO4 semiconductor photoelectrochemical sensor for ultra-sensitive tumor biomarker detection

Journal of materials chemistry. B, Materials for biology and medicine, 2022-02, Vol.10 (6), p.870-879

2022

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Copper gate AlGaN/GaN HEMT with low gate leakage current

IEEE electron device letters, 2003-08, Vol.24 (8), p.500-502

2003

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IEEE_Xplore

Photoelectrical characteristics of ultra thin TiO2/diamond photodetector

Materials letters, 2017-02, Vol.188, p.52-54

2017

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Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure

中国物理B（英文版）, 2021-06, Vol.30 (6), p.665-670

2021

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Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

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Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Applied surface science, 2015-10, Vol.351, p.1155-1160

2015

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Photoanodes: Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet (Adv. Mater. Interfaces 10/2017)

Advanced materials interfaces, 2017-05, Vol.4 (10), p.n/a

2017

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S-Parameter Analysis of GaN Schottky Diodes for Microwave Power Rectification

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, p.1-4

2010

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IEEE_Xplore

GaN metal–oxide–semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

Frontiers of materials science, 2015-06, Vol.9 (2), p.151-155

2015

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V - V Characterization of AlGaN/GaN HFET With p-Type Body Layer

IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4265-4271

2011

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IEEE_Xplore

Technologies for wireless charging in microwave cavity box using GaN Schottky barrier diode

2016 IEEE Wireless Power Transfer Conference (WPTC), 2016, p.1-4

2016

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VT — VSUB Characterization of AlGaN/GaN HFET With p-Type Body Layer

IEEE transactions on electron devices, 2011-12, Vol.58 (12), p.4265-4271

2011

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The Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

Materials science forum, 2019-05, Vol.954, p.104-108

2019

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Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

Materials science forum, 2019-05, Vol.954, p.109-113

2019

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Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Mechanism on BiVO4 photoanode photoelectrochemical performance improving: Based on surface electrochemical reduction method

GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO 4 Photoanode by Doped Quantum Layers Modification

Conductive polymer nanolayer modified one-dimensional ZnO/CdSe photoanode with enhanced photoelectrochemical properties by in-situ ions exchange method

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification (Small 21/2022)

Crystal-reconstructed BiVO4 semiconductor photoelectrochemical sensor for ultra-sensitive tumor biomarker detection

Copper gate AlGaN/GaN HEMT with low gate leakage current

Photoelectrical characteristics of ultra thin TiO2/diamond photodetector

Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure

Metal–Insulator–Semiconductor Diode Characterization on n-GaN by Capacitance–Voltage Measurement at 150 °C

Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

Photoanodes: Optimization of the Photo‐Electrochemical Performance of Mo‐Doped BiVO4 Photoanode by Controlling the Metal–Oxygen Bond State on (020) Facet (Adv. Mater. Interfaces 10/2017)

S-Parameter Analysis of GaN Schottky Diodes for Microwave Power Rectification

GaN metal–oxide–semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

V - V Characterization of AlGaN/GaN HFET With p-Type Body Layer

Technologies for wireless charging in microwave cavity box using GaN Schottky barrier diode

VT — VSUB Characterization of AlGaN/GaN HFET With p-Type Body Layer

The Correlation between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

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