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Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

ʿ⁠Abdullāh al-ʿ⁠Arwī’s ʾAwrāq: sīrat Idrīs al-dhihniyyah and the Aesthetics-Politics Dialectic

Journal of Arabic literature, 2023-05, Vol.54 (1-2), p.189-216

El Younssi, Anouar

2023

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A 0.008‐mm2, 35‐μW, 8.87‐ps‐resolution CMOS time‐to‐digital converter using dual‐slope architecture

International journal of circuit theory and applications, 2017-04, Vol.45 (4), p.466-482

2017

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A 0.01-8-GHz (12.5 Gb/s) 4[Formula Omitted]4 CMOS Switch Matrix

IEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386

2012

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A 0.01-8-GHz (12.5 Gb/s) 4 \,\times\,4 CMOS Switch Matrix

IEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386

2012

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A 0.01―8-GHz (12.5 Gb/s) 4 x 4 CMOS Switch Matrix

IEEE transactions on microwave theory and techniques, 2012-02, Vol.60 (2), p.381-386

2012

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A 0.012‐mm 2 0.244‐pJ/bit successive approximation register analog‐to‐digital converter‐based true random number generator for Internet of Things applications in a 65‐nm complementary metal–oxide–semiconductor

International journal of circuit theory and applications, 2024-05

2024

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0.013 mm2 and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

Microwave and optical technology letters, 2013-10, Vol.55 (10), p.2484-2487

2013

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A 0.0325-mm² 114-to-147-GHz 6-Bit Passive Vector-Modulated Phase Shifter With MN-Embedded Isolated Power Combiner Achieving

IEEE transactions on circuits and systems. I, Regular papers, 2023-01, Vol.70 (11), p.4394

2023

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A 0.0325-mm ^2 114-to-147-GHz 6-Bit Passive Vector-Modulated Phase Shifter With MN-Embedded Isolated Power Combiner Achieving 3.7 ^$ RMS Phase Error in 65-nm CMOS

IEEE transactions on circuits and systems. I, Regular papers, 2023-08, p.1-12

2023

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A 0.0325-mm² 114-to-147-GHz 6-Bit Passive Vector-Modulated Phase Shifter With MN-Embedded Isolated Power Combiner Achieving <3.7° RMS Phase Error in 65-nm CMOS

IEEE transactions on circuits and systems. I, Regular papers, 2023-11, Vol.70 (11), p.4394-4405

2023

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A 0.05% cetyl pyridinium chloride/0.05% chlorhexidine mouth rinse during maintenance phase after initial periodontal therapy

Journal of clinical periodontology, 2005-04, Vol.32 (4), p.390-400

2005

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A 0.08 /spl mu/m/sup 2/-sized 8F/sup 2/ stack DRAM cell for multi-gigabit DRAM

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002, p.56-57

2002

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A 0.1-1.9GHz 65nm CMOS variable-gain mixer-first receiver with DSA and noise-shaping TIA

IEICE Electronics Express, 2023-05, Vol.20 (9), p.20230086-20230086, Article 20.20230086

2023

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A 0.1-1 GHz 10-W RF power silicon DMOSFET amplifier using feedback

Jin, Mingdi

1994

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A 0.1–4 GHz SDR receiver with reconfigurable 10–100 MHz signal bandwidth in 65 nm CMOS

Analog integrated circuits and signal processing, 2013-12, Vol.77 (3), p.567-582

2013

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0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output

Electronics letters, 2003-10, Vol.39 (22), p.1-1

2003

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0.1 Grams of Sub-Cutaneous Adipose Tissue (SCAT) as Source of Adult Multipotent Mesenchymal Stromal Cells (MSC) for Cell-Based Therapies

Blood, 2007-11, Vol.110 (11), p.4915-4915

2007

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0.1-mm electrostatic microrelays switch at up to 100 GHz

Electronic design, 1997-12, Vol.45 (27), p.34

Vollmer, Alfred

1997

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0.1 ppm four‐terminal resistance bridge for use with a dilution refrigerator

Review of scientific instruments, 1980-11, Vol.51 (11), p.1516-1522

1980

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A 0.1-/spl mu/m delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy

IEEE transactions on electron devices, 1998-04, Vol.45 (4), p.809-814

1998

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0.1 /spl mu/m delta-doped MOSFET using post low-energy implanting selective epitaxy

Proceedings of 1994 VLSI Technology Symposium, 1994, p.19-20

1994

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0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications

Digest. International Electron Devices Meeting, 2002, p.667-670

2002

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A 0.1 to 2.7‐GHz SOI SP8T antenna switch adopting body self‐adapting bias technique for low‐loss high‐power applications

International journal of circuit theory and applications, 2018-04, Vol.46 (4), p.827-841

2018

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A 0.12- }^ 2.4-GHz CMOS Inductorless High Isolation Subharmonic Mixer With Effective Current-Reuse Transconductance

IEEE transactions on microwave theory and techniques, 2015-08, Vol.63 (8), p.2427-2437

2015

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A 0.13 ${\mu}m$ CMOS UWB RF Transmitter with an On-Chip T/R Switch

ETRI journal, 2008, Vol.30 (4), p.526-534

2008

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ʿ⁠Abdullāh al-ʿ⁠Arwī’s ʾAwrāq: sīrat Idrīs al-dhihniyyah and the Aesthetics-Politics Dialectic

A 0.008‐mm2, 35‐μW, 8.87‐ps‐resolution CMOS time‐to‐digital converter using dual‐slope architecture

A 0.01-8-GHz (12.5 Gb/s) 4[Formula Omitted]4 CMOS Switch Matrix

A 0.01-8-GHz (12.5 Gb/s) 4 \,\times\,4 CMOS Switch Matrix

A 0.01―8-GHz (12.5 Gb/s) 4 x 4 CMOS Switch Matrix

A 0.012‐mm 2 0.244‐pJ/bit successive approximation register analog‐to‐digital converter‐based true random number generator for Internet of Things applications in a 65‐nm complementary metal–oxide–semiconductor

0.013 mm2 and Low-power 10 Gb/s Transimpedance Amplifier for Short-reach Optical Interconnects

A 0.0325-mm² 114-to-147-GHz 6-Bit Passive Vector-Modulated Phase Shifter With MN-Embedded Isolated Power Combiner Achieving

A 0.0325-mm ^2 114-to-147-GHz 6-Bit Passive Vector-Modulated Phase Shifter With MN-Embedded Isolated Power Combiner Achieving 3.7 ^$ RMS Phase Error in 65-nm CMOS

A 0.0325-mm² 114-to-147-GHz 6-Bit Passive Vector-Modulated Phase Shifter With MN-Embedded Isolated Power Combiner Achieving <3.7° RMS Phase Error in 65-nm CMOS

A 0.05% cetyl pyridinium chloride/0.05% chlorhexidine mouth rinse during maintenance phase after initial periodontal therapy

A 0.08 /spl mu/m/sup 2/-sized 8F/sup 2/ stack DRAM cell for multi-gigabit DRAM

A 0.1-1.9GHz 65nm CMOS variable-gain mixer-first receiver with DSA and noise-shaping TIA

A 0.1-1 GHz 10-W RF power silicon DMOSFET amplifier using feedback

A 0.1–4 GHz SDR receiver with reconfigurable 10–100 MHz signal bandwidth in 65 nm CMOS

0.1-42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output

0.1 Grams of Sub-Cutaneous Adipose Tissue (SCAT) as Source of Adult Multipotent Mesenchymal Stromal Cells (MSC) for Cell-Based Therapies

0.1-mm electrostatic microrelays switch at up to 100 GHz

0.1 ppm four‐terminal resistance bridge for use with a dilution refrigerator

A 0.1-/spl mu/m delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy

0.1 /spl mu/m delta-doped MOSFET using post low-energy implanting selective epitaxy

0.1 /spl mu/m RFCMOS on high resistivity substrates for system on chip (SOC) applications

A 0.1 to 2.7‐GHz SOI SP8T antenna switch adopting body self‐adapting bias technique for low‐loss high‐power applications

A 0.12- }^ 2.4-GHz CMOS Inductorless High Isolation Subharmonic Mixer With Effective Current-Reuse Transconductance

A 0.13 ${\mu}m$ CMOS UWB RF Transmitter with an On-Chip T/R Switch

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