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Raman and AFM studies of (As2S3)0.45(SbSI)0.55 thin films and bulk glass

Journal of non-crystalline solids, 2014-08, Vol.396-397, p.36-40

2014

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Investigations of the structural, optical, and electrical properties of Pb(0(.(8)Sn(0(.(2)Te layers grown on Si(100) using BaF(2)/CaF(2) buffer

Thin solid films, 2009-06, Vol.517 (16), p.4599-4604

2009

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Investigations of the structural, optical, and electrical properties of Pb 0.8Sn 0.2Te layers grown on Si(100) using BaF 2/CaF 2 buffer

Thin solid films, 2009, Vol.517 (16), p.4599-4604

2009

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Spectroscopic Ellipsometry Studies and Temperature Behaviour of the Dielectric Function of TlInS2 Layered Crystal

Journal of Nano- and Electronic Physics, 2017, Vol.9 (5), p.5025-5025-6

2017

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Thermal treatment-dependent chemical composition of ternary CdS 1− x Se x nanocrystals grown in borosilicate glass

Journal of crystal growth, 2010, Vol.312 (10), p.1709-1716

2010

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Inhomogeneous transport property of Alq 3 thin films: Local order or phase separation?

Synthetic metals, 2006, Vol.156 (16), p.1108-1117

2006

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Inhomogeneous transport property of Alq3 thin films : Local order or phase separation?

Synthetic metals, 2006-08, Vol.156 (16-17), p.1108-1117

2006

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Ellipsometric study of an organic template effect: H 2Pc/PTCDA

Organic electronics, 2006, Vol.7 (6), p.521-527

2006

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Erratum: "Surface enhanced Raman scattering of light by ZnO nanostructures" [JETP 113

Journal of experimental and theoretical physics, 2012-01, Vol.114 (1), p.182

2012

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Field effect of fixed negative charges on oxidized silicon induced by AlF 3 layers with fluorine deficiency

Applied surface science, 2004-07, Vol.234 (1), p.222-227

2004

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Erratum to: “Surface enhanced Raman scattering of light by ZnO nanostructures”

Journal of experimental and theoretical physics, 2012, Vol.114 (1), p.182-182

2012

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OVPD und Anwendung optischer Spektroskopiemethoden zur Wachstumskontrolle. OVPD and Applications of Optical Spectroscopic Methods to Growth Control

Vakuum in Forschung und Praxis : Zeitschrift für Vakuumtechnologie, Oberflèachen und Dünne Schichten, 2003-12, Vol.15 (6), p.312-314

2003

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Dielectric relaxation in a hybrid Ag/DiMe-PTCDI/GaAs device

Journal of non-crystalline solids, 2005-08, Vol.351 (24), p.2003-2008

2005

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PTCDA film formation on Si(111):H-1×1 surface: total current spectroscopy monitoring

Surface science, 2000-02, Vol.446 (3), p.193-198

2000

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7 - Spectroscopy of Vibrational States in Low-Dimensional Semiconductor Systems

Advances in Semiconductor Nanostructures, 2017, p.157-186

2017

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Raman monitoring of In and Ag growth on PTCDA and DiMe-PTCDI thin films

Applied surface science, 2004-07, Vol.234 (1), p.168-172

2004

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Surface-enhanced Raman scattering study of silver deposition on thin Alq 3 layers

Applied surface science, 2002-05, Vol.190 (1), p.371-375

2002

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Classification of charge relaxation processes in diamond on silicon based devices

Diamond and related materials, 2004-04, Vol.13 (4), p.965-968

2004

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Passivation of growth defects in GaAs/AlGaAs multiple quantum well structures by CF 4 plasma

Physica. B, Condensed matter, 2001, Vol.308, p.761-764

2001

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Frenkel Exciton Model of Low Temperature Photoluminescence in ?-PTCDA Single Crystals

physica status solidi (b), 2002-11, Vol.234 (1), p.402-410

2002

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Scaling down thickness of ULK materials for 65nm node and below and its effect on electrical performance

Microelectronic engineering, 2005-12, Vol.82 (3-4), p.405-410

2005

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OVPD und Anwendung optischer Spektroskopiemethoden zur Wachstumskontrolle. OVPD and Applications of Optical Spectroscopic Methods to Growth Control

Vakuum in Forschung und Praxis : Zeitschrift für Vakuumtechnologie, Oberflèachen und Dünne Schichten, 2003-12, Vol.15 (6), p.312-314

2003

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A deconvolution of the transient response of (1 0 0) Si/SiO 2 semiconductor–insulator interface states according to small pulse excitation: evidence of different branches of charge transition

Solid-state electronics, 2000, Vol.44 (8), p.1463-1470

2000

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Evidence for high negative charge densities in AlF 3 coatings on oxidized silicon: a promising source for large drift fields

Physica. E, Low-dimensional systems & nanostructures, 2002, Vol.14 (1), p.259-262

2002

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Surface-enhanced Raman scattering study of silver deposition on thin Alq3 layers

Applied surface science, 2002, Vol.190 (1-4), p.371-375

2002

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Raman and AFM studies of (As2S3)0.45(SbSI)0.55 thin films and bulk glass

Investigations of the structural, optical, and electrical properties of Pb(0(.(8)Sn(0(.(2)Te layers grown on Si(100) using BaF(2)/CaF(2) buffer

Investigations of the structural, optical, and electrical properties of Pb 0.8Sn 0.2Te layers grown on Si(100) using BaF 2/CaF 2 buffer

Spectroscopic Ellipsometry Studies and Temperature Behaviour of the Dielectric Function of TlInS2 Layered Crystal

Thermal treatment-dependent chemical composition of ternary CdS 1− x Se x nanocrystals grown in borosilicate glass

Inhomogeneous transport property of Alq 3 thin films: Local order or phase separation?

Inhomogeneous transport property of Alq3 thin films : Local order or phase separation?

Ellipsometric study of an organic template effect: H 2Pc/PTCDA

Erratum: "Surface enhanced Raman scattering of light by ZnO nanostructures" [JETP 113

Field effect of fixed negative charges on oxidized silicon induced by AlF 3 layers with fluorine deficiency

Erratum to: “Surface enhanced Raman scattering of light by ZnO nanostructures”

OVPD und Anwendung optischer Spektroskopiemethoden zur Wachstumskontrolle. OVPD and Applications of Optical Spectroscopic Methods to Growth Control

Dielectric relaxation in a hybrid Ag/DiMe-PTCDI/GaAs device

PTCDA film formation on Si(111):H-1×1 surface: total current spectroscopy monitoring

7 - Spectroscopy of Vibrational States in Low-Dimensional Semiconductor Systems

Raman monitoring of In and Ag growth on PTCDA and DiMe-PTCDI thin films

Surface-enhanced Raman scattering study of silver deposition on thin Alq 3 layers

Classification of charge relaxation processes in diamond on silicon based devices

Passivation of growth defects in GaAs/AlGaAs multiple quantum well structures by CF 4 plasma

Frenkel Exciton Model of Low Temperature Photoluminescence in ?-PTCDA Single Crystals

Scaling down thickness of ULK materials for 65nm node and below and its effect on electrical performance

OVPD und Anwendung optischer Spektroskopiemethoden zur Wachstumskontrolle. OVPD and Applications of Optical Spectroscopic Methods to Growth Control

A deconvolution of the transient response of (1 0 0) Si/SiO 2 semiconductor–insulator interface states according to small pulse excitation: evidence of different branches of charge transition

Evidence for high negative charge densities in AlF 3 coatings on oxidized silicon: a promising source for large drift fields

Surface-enhanced Raman scattering study of silver deposition on thin Alq3 layers

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