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Methodology for parameters extraction with undoped junctionless EZ-FETs

Solid-state electronics, 2024-07, Vol.217, p.108897, Article 108897

2024

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A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.4042-4045

2022

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IEEE_Xplore

Design insights into RF/analog and linearity/distortion of spacer engineered multi‐fin SOI FET for terahertz applications

International journal of RF and microwave computer-aided engineering, 2021-12, Vol.31 (12), p.n/a

2021

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Charge Collection in SOI Microdosimeters and their Radiation Hardness

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1

2023

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IEEE_Xplore

Giving an Account of Oneself

Butler, Judith

1, 2005

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Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI

IEEE transactions on microwave theory and techniques, 2020-01, Vol.68 (1), p.132-143

2020

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IEEE_Xplore

28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE

IEEE microwave and wireless components letters, 2018-05, Vol.28 (5), p.446-448

2018

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IEEE_Xplore

A 1.7-dB Minimum NF, 22-32-GHz Low-Noise Feedback Amplifier With Multistage Noise Matching in 22-nm FD-SOI CMOS

IEEE journal of solid-state circuits, 2020-05, Vol.55 (5), p.1239-1248

2020

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IEEE_Xplore

Compact and Slow-Wave Tunable 28 nm CMOS-SOI Twisted Hybrid Couplers for 5G Applications

IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2486-2497

2024

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IEEE_Xplore

A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

IEEE transactions on antennas and propagation, 2020-06, Vol.68 (6), p.4450-4458

2020

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A 5G 28-GHz Common-Leg T/R Front-End in 45-nm CMOS SOI With 3.7-dB NF and −30-dBc EVM With 64-QAM/500-MBaud Modulation

IEEE transactions on microwave theory and techniques, 2019-01, Vol.67 (1), p.318-331

2019

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IEEE_Xplore

Reclaim Autonomy: Selbstermächtigung in der digitalen Weltordnung

Augstein, Jakob

1, 2017

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A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology

IEEE electron device letters, 2024-04, Vol.45 (4), p.558-561

2024

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IEEE_Xplore

A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

IEEE transactions on microwave theory and techniques, 2021-06, Vol.69 (6), p.2795-2808

2021

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IEEE_Xplore

Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

IEEE transactions on circuits and systems. I, Regular papers, 2017-04, Vol.64 (4), p.847-857

2017

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IEEE_Xplore

A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability

IEEE electron device letters, 2024-01, Vol.45 (1), p.1-1

2024

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IEEE_Xplore

A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation

IEEE journal of solid-state circuits, 2020-05, Vol.55 (5), p.1411-1421

2020

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IEEE_Xplore

Semiconductor Devices for Space Use and Radiation Hardening Technique

The Journal of The Institute of Electrical Engineers of Japan, 2009/11/01, Vol.129(11), pp.739-742

2009

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A 20-42-GHz IQ Receiver in 22-nm CMOS FD-SOI With 2.7-4.2-dB NF and −25-dBm IP1dB for Wideband 5G Systems

IEEE transactions on microwave theory and techniques, 2021-11, Vol.69 (11), p.4951-4960

2021

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IEEE_Xplore

A 22-nm FDSOI CMOS Low-Noise Active Balun Achieving

IEEE journal of solid-state circuits, 2022-01, Vol.57 (5), p.1432

2022

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A Compact Low-Power 28-nm FD-SOI CMOS 76-81 GHz Dual-Path Receiver With Phase Control for Automotive Applications

IEEE transactions on microwave theory and techniques, 2024-07, Vol.72 (7), p.1-0

2024

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IEEE_Xplore

High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

IEEE electron device letters, 2022-07, Vol.43 (7), p.1077-1080

2022

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IEEE_Xplore

Single-etched fiber-chip coupler with a metal mirror on a 220-nm silicon-on-insulator platform for perfectly vertical coupling

Optics letters, 2024-06, Vol.49 (11), p.2974

2024

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Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs

IEEE transactions on nuclear science, 2019-04, Vol.66 (4), p.710-715

2019

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IEEE_Xplore

Loss analysis of a grating coupler for single-mode fiber coupling into an SOI waveguide

Applied optics (2004), 2024-05, Vol.63 (14), p.3763-3769

Cai, Ziyu

2024

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Methodology for parameters extraction with undoped junctionless EZ-FETs

A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

Design insights into RF/analog and linearity/distortion of spacer engineered multi‐fin SOI FET for terahertz applications

Charge Collection in SOI Microdosimeters and their Radiation Hardness

Giving an Account of Oneself

Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI

28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE

A 1.7-dB Minimum NF, 22-32-GHz Low-Noise Feedback Amplifier With Multistage Noise Matching in 22-nm FD-SOI CMOS

Compact and Slow-Wave Tunable 28 nm CMOS-SOI Twisted Hybrid Couplers for 5G Applications

A 38 dB Gain, Low-Loss, Flat Array Antenna for 320-400 GHz Enabled by Silicon-on-Insulator Micromachining

A 5G 28-GHz Common-Leg T/R Front-End in 45-nm CMOS SOI With 3.7-dB NF and −30-dBc EVM With 64-QAM/500-MBaud Modulation

Reclaim Autonomy: Selbstermächtigung in der digitalen Weltordnung

A Novel 1T-DRAM Fabricated With 22 nm FD-SOI Technology

A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology

A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology with High Responsivity and Detectivity Optimization Capability

A 30-GHz CMOS SOI Outphasing Power Amplifier With Current Mode Combining for High Backoff Efficiency and Constant Envelope Operation

Semiconductor Devices for Space Use and Radiation Hardening Technique

A 20-42-GHz IQ Receiver in 22-nm CMOS FD-SOI With 2.7-4.2-dB NF and −25-dBm IP1dB for Wideband 5G Systems

A 22-nm FDSOI CMOS Low-Noise Active Balun Achieving

A Compact Low-Power 28-nm FD-SOI CMOS 76-81 GHz Dual-Path Receiver With Phase Control for Automotive Applications

High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure

Single-etched fiber-chip coupler with a metal mirror on a 220-nm silicon-on-insulator platform for perfectly vertical coupling

Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs

Loss analysis of a grating coupler for single-mode fiber coupling into an SOI waveguide

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