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Two Reaction Model of Interface Trap Annealing
IEEE transactions on nuclear science, 1986, Vol.33 (6), p.1198-1202
1986
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In Situ Measurement of 1.8-MeV Proton Radiation Effects on Comb-Drive MEMS Resonators
IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.462-468
2023
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Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors
IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.1970-1991
2013
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Influence of Radiation Environment Variability on Cumulative Heavy-Ion-Induced Leakage Current in SiC Power Devices
IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1
2023
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LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices
IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.809-815
2024
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The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs
IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3169-3175
2010
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Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes
IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1
2023
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Charge Trapping and Transconductance Degradation in Irradiated 3-D Sequentially Integrated FDSOI MOSFETs
IEEE Transactions on Nuclear Science, 2021-05, Vol.68 (5), p.707-715
2021
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The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture
IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.108-115
2020
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Effects of Ion-Induced Displacement Damage on GaN/AlN MEMS Resonators
IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.216-224
2022
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Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections
IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.441-448
2017
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Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology
IEEE transactions on nuclear science, 2021-03, Vol.68 (3), p.305-311
2021
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Analysis of Heavy-Ion-Induced Leakage Current in SiC Power Devices
IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.248-253
2022
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The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM
IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2125-2131
2005
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Observation of Low-Energy Proton Direct Ionization in a 72-Layer 3-D NAND Flash Memory
IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.835-841
2021
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Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices with SiON Tunneling Oxide
IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1
2023
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Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs
IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.740-747
2021
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Total-Ionizing-Dose Effects on Polycrystalline-Si Channel Vertical-Charge-Trapping Nand Devices
IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.314-320
2022
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Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators
IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.34-38
2018
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In-Situ Measurement of 1.8MeV Proton Radiation Effects on Comb-Drive MEMS Resonators
IEEE transactions on nuclear science, 2023-01, p.1-1
2023
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Scaling Effects on Single-Event Transients in InGaAs FinFETs
IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.296-303
2018
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Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates
IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.376-383
2019
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Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength
IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2069-2078
2017
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Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners
IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.2260-2267
2018
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Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers
IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.263-268
2017
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