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Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells

Journal of applied physics, 2021-12, Vol.130 (21)

2021

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Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells

Applied physics letters, 2020-08, Vol.117 (8)

2020

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Quantifying non-threshold Auger-recombination processes in mid-wavelength infrared range HgCdTe quantum wells

Applied physics letters, 2023-10, Vol.123 (18)

2023

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Auger recombination in narrow gap HgCdTe/CdHgTe quantum well heterostructures

Journal of applied physics, 2021-04, Vol.129 (13)

2021

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Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures

Semiconductors (Woodbury, N.Y.), 2019-09, Vol.53 (9), p.1198-1202

2019

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Effect of Internal Optical Losses on the Generation of Mid-IR Stimulated Emission in Waveguide Heterostructures with HgCdTe/CdHgTe Quantum Wells

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (12), p.899-902

2021

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Generation of Long-Wavelength Stimulated Emission in HgCdTe Quantum Wells with an Increased Auger Recombination Threshold

JETP letters, 2023-09, Vol.118 (5), p.309-314

2023

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Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1119-1122

2020

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Probing States of a Double Acceptor in CdHgTe Heterostructures via Optical Gating

JETP letters, 2020-05, Vol.111 (10), p.575-581

2020

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Mid-IR stimulated emission in Hg(Cd)Te/CdHgTe quantum well structures up to 200 K due to suppressed Auger recombination

Laser physics, 2021-01, Vol.31 (1), p.15801

2021

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Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells

Journal of experimental and theoretical physics, 2018-12, Vol.127 (6), p.1125-1129

2018

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Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1375-1379

2018

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Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range

JETP letters, 2019-05, Vol.109 (10), p.657-662

2019

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Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing

Nanomaterials (Basel, Switzerland), 2022-12, Vol.12 (24), p.4398

2022

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Laser Generation at Wavelengths 4.1–5.1 μm of CdxHg1–xTe/CdyHg1–yTe Quantum-Well Heterostructures with Microdisk Resonators

Journal of applied spectroscopy, 2022-11, Vol.89 (5), p.844-848

2022

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Express Characterization of the HgCdTe/CdHgTe Quantum Well Waveguide Heterostructures with the Quasi-Relativistic Carrier Dispersion Law by Room-Temperature Photoluminescence Spectroscopy

Technical physics letters, 2021-02, Vol.47 (2), p.154-157

2021

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Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm

Semiconductors (Woodbury, N.Y.), 2019-09, Vol.53 (9), p.1154-1157

2019

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Continuous-Wave Stimulated Emission in the 10–14-μm Range under Optical Excitation in HgCdTe/CdHgTe-QW Structures with Quasirelativistic Dispersion

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1371-1375

2020

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Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers

Nanomaterials (Basel, Switzerland), 2021-07, Vol.11 (7), p.1855

2021

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Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well

Physical review. B, 2018-06, Vol.97 (24), Article 245419

2018

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Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1586-1589

2018

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Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/CdxHg1 - xTe quantum wells, emitting at a wavelength of 18 μm

Quantum electronics (Woodbury, N.Y.), 2019-06, Vol.49 (6), p.556-558

2019

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Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1590-1594

2018

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Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission

Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1557-1561

2017

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Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1365-1370

2020

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Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells

Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells

Quantifying non-threshold Auger-recombination processes in mid-wavelength infrared range HgCdTe quantum wells

Auger recombination in narrow gap HgCdTe/CdHgTe quantum well heterostructures

Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures

Effect of Internal Optical Losses on the Generation of Mid-IR Stimulated Emission in Waveguide Heterostructures with HgCdTe/CdHgTe Quantum Wells

Generation of Long-Wavelength Stimulated Emission in HgCdTe Quantum Wells with an Increased Auger Recombination Threshold

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region

Probing States of a Double Acceptor in CdHgTe Heterostructures via Optical Gating

Mid-IR stimulated emission in Hg(Cd)Te/CdHgTe quantum well structures up to 200 K due to suppressed Auger recombination

Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells

Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells

Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range

Balancing the Number of Quantum Wells in HgCdTe/CdHgTe Heterostructures for Mid-Infrared Lasing

Laser Generation at Wavelengths 4.1–5.1 μm of CdxHg1–xTe/CdyHg1–yTe Quantum-Well Heterostructures with Microdisk Resonators

Express Characterization of the HgCdTe/CdHgTe Quantum Well Waveguide Heterostructures with the Quasi-Relativistic Carrier Dispersion Law by Room-Temperature Photoluminescence Spectroscopy

Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm

Continuous-Wave Stimulated Emission in the 10–14-μm Range under Optical Excitation in HgCdTe/CdHgTe-QW Structures with Quasirelativistic Dispersion

Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers

Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well

Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures

Effect of Cd content in barriers on the threshold energy of Auger recombination in waveguide structures with HgTe/CdxHg1 - xTe quantum wells, emitting at a wavelength of 18 μm

Terahertz Injection Lasers Based on a PbSnSe Solid Solution with an Emission Wavelength up to 50 μm and Their Application in the Magnetospectroscopy of Semiconductors

Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission

Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window

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