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Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells

Applied physics letters, 2020-08, Vol.117 (8)

2020

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Quantifying non-threshold Auger-recombination processes in mid-wavelength infrared range HgCdTe quantum wells

Applied physics letters, 2023-10, Vol.123 (18)

2023

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Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μm

Applied physics letters, 2017-11, Vol.111 (19)

2017

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Optically pumped stimulated emission in HgCdTe-based quantum wells: Toward continuous wave lasing in very long-wavelength infrared range

Applied physics letters, 2024-04, Vol.124 (16)

2024

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Whispering gallery mode HgCdTe laser operating near 4 μm under Peltier cooling

Applied physics letters, 2023-10, Vol.123 (16)

2023

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Stimulated emission in 24–31 μm range and «Reststrahlen» waveguide in HgCdTe structures grown on GaAs

Applied physics letters, 2022-10, Vol.121 (18)

2022

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Long wavelength stimulated emission up to 9.5 μm from HgCdTe quantum well heterostructures

Applied physics letters, 2016-02, Vol.108 (9)

2016

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Time resolved photoluminescence spectroscopy of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well heterostructures

Applied physics letters, 2014-07, Vol.105 (2)

2014

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Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26 μ m

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Long wavelength superluminescence from narrow gap HgCdTe epilayer at 100 K

Applied physics letters, 2015-07, Vol.107 (4)

2015

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Time resolved photoluminescence spectroscopy of narrow gap Hg{sub 1−x}Cd{sub x}Te/Cd{sub y}Hg{sub 1−y}Te quantum well heterostructures

Applied physics letters, 2014-07, Vol.105 (2)

2014

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1.3 μ m photoluminescence of Ge/GaAs multi-quantum-well structure

Journal of applied physics, 2014-01, Vol.115 (4)

2014

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Low frequency noise and trap density in GaN/AlGaN field effect transistors

Applied physics letters, 2019-10, Vol.115 (18)

2019

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Plasmonic and bolometric terahertz detection by graphene field-effect transistor

Applied physics letters, 2013-10, Vol.103 (18), p.181114

2013

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Homodyne phase sensitive terahertz spectrometer

Applied physics letters, 2017-09, Vol.111 (12)

2017

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Performance limits for field effect transistors as terahertz detectors

Applied physics letters, 2013-06, Vol.102 (22)

2013

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Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

Applied physics letters, 2005-08, Vol.87 (5), p.052107-052107-3

2005

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Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes

Applied physics letters, 2017-02, Vol.110 (8)

2017

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Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor

Applied physics letters, 2005-07, Vol.87 (2), p.022102-022102-3

2005

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Terahertz response of field-effect transistors in saturation regime

Applied physics letters, 2011-06, Vol.98 (24), p.243505-243505-3

2011

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Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes

Applied physics letters, 2017-03, Vol.110 (13)

2017

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Formation and evolution of charged domain walls in congruent lithium niobate

Applied physics letters, 2000-11, Vol.77 (22), p.3636-3638

2000

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Nanoscale backswitched domain patterning in lithium niobate

Applied physics letters, 2000-01, Vol.76 (2), p.143-145

2000

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Localized and collective magnetoplasmon excitations in AlGaN/GaN-based grating-gate terahertz modulators

Applied physics letters, 2011-11, Vol.99 (21), p.213501-213501-3

2011

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Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors

Applied physics letters, 2001-08, Vol.79 (6), p.866-868

2001

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Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells

Quantifying non-threshold Auger-recombination processes in mid-wavelength infrared range HgCdTe quantum wells

Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μm

Optically pumped stimulated emission in HgCdTe-based quantum wells: Toward continuous wave lasing in very long-wavelength infrared range

Whispering gallery mode HgCdTe laser operating near 4 μm under Peltier cooling

Stimulated emission in 24–31 μm range and «Reststrahlen» waveguide in HgCdTe structures grown on GaAs

Long wavelength stimulated emission up to 9.5 μm from HgCdTe quantum well heterostructures

Time resolved photoluminescence spectroscopy of narrow gap Hg1−xCdxTe/CdyHg1−yTe quantum well heterostructures

Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26 μ m

Long wavelength superluminescence from narrow gap HgCdTe epilayer at 100 K

Time resolved photoluminescence spectroscopy of narrow gap Hg{sub 1−x}Cd{sub x}Te/Cd{sub y}Hg{sub 1−y}Te quantum well heterostructures

1.3 μ m photoluminescence of Ge/GaAs multi-quantum-well structure

Low frequency noise and trap density in GaN/AlGaN field effect transistors

Plasmonic and bolometric terahertz detection by graphene field-effect transistor

Homodyne phase sensitive terahertz spectrometer

Performance limits for field effect transistors as terahertz detectors

Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor

Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes

Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor

Terahertz response of field-effect transistors in saturation regime

Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes

Formation and evolution of charged domain walls in congruent lithium niobate

Nanoscale backswitched domain patterning in lithium niobate

Localized and collective magnetoplasmon excitations in AlGaN/GaN-based grating-gate terahertz modulators

Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors

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