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Optically erasable samarium-doped fluorophosphate glasses for high-dose measurements in microbeam radiation therapy

Journal of applied physics, 2014-02, Vol.115 (6)

2014

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Solution-processed Er3+-doped As3S7 chalcogenide films: optical properties and 1.5 μm photoluminescence activated by thermal treatment

2017-09

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Optical properties of Er-doped Gax(Ge0.3Se0.7)100−x glasses

Optical materials, 2006-02, Vol.28 (3), p.225-230

2006

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Samarium-Doped Fluorochlorozirconate Glass-Ceramics as Red-Emitting X-Ray Phosphors

Journal of the American Ceramic Society, 2011-02, Vol.94 (2), p.543-550

2011

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Excitation diffusion due to photon trapping in GeGaSe glasses heavily doped with Er super(3+)

Journal of materials science. Materials in electronics, 2009-01, Vol.20 (1), p.139-143

2009

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Solution-processed Er 3+ -doped As 3 S 7 chalcogenide films: optical properties and 1.5 μm photoluminescence activated by thermal treatment

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (33), p.8489-8497

2017

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Springer Handbook of Electronic and Photonic Materials

1. Aufl., 2006

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Erratum to “Optical properties of divalent samarium-doped fluorochlorozirconate glasses and glass ceramics” [Opt. Mater. 31 (2009) 1459–1466]

Optical materials, 2009, Vol.32 (1), p.266-266

2009

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The nature of photoconductivity decay spectral dependence in a-Si:H

Journal of non-crystalline solids, 1991, Vol.137, p.603-606

1991

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Thermally Induced Nanostructures in Samarium-Doped Glass Ceramics for X-Ray Sensor Applications

Nanotechnological Basis for Advanced Sensors, 2011, p.241-248

2011

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Influence of UV irradiation on a-Si:H film growth

Journal of non-crystalline solids, 1991, Vol.137, p.685-688

1991

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Influence of UV irradiation on a-Si:H film growth

Journal of non-crystalline solids, 1991, Vol.137-38, p.685-688

1991

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The nature of photoconductivity decay spectral dependence in a-Si:H

Journal of non-crystalline solids, 1991, Vol.137-38, p.603-606

1991

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Photoluminescence measurements of Er-doped chalcogenide glasses

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2004-05, Vol.22 (3), p.921-924

2004

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Slow luminescence from Er3+ centers in Er-Doped GeGaSe chalcogenide glasses observed by wideband quadrature frequency-resolved spectroscopy

Journal of materials science. Materials in electronics, 2007-10, Vol.18 (S1), p.97-101

2007

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Characterization of super(4)I sub(9/2) &#85 96; super(4)F sub(3/2) optical transitions in trivalent Nd super(3+) ions in GaLaS glass

Journal of materials science. Materials in electronics, 2009-01, Vol.20 (1), p.19-22

2009

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Observation of 4F3/2→4I15/2 radiative transition in Nd3+ ions in GaLaS glass using frequency-resolved PL spectroscopy

Physica status solidi. C, 2009-05, Vol.6 (S1), p.S54-S58

2009

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Observation of 4 F 3/2 → 4 I 15/2 radiative transition in Nd 3+ ions in GaLaS glass using frequency‐resolved PL spectroscopy

Physica status solidi. C, 2009-05, Vol.6 (S1), Article 554

2009

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Quadrature frequency resolved spectroscopy (QFRS) of radiative transitions of Er 3+ and Nd 3+ ions in chalcogenide glasses (ChGs)

Journal of physics. Conference series, 2010-11, Vol.253, p.12010

2010

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Slow luminescence from Er super(3+) centers in Er-Doped GeGaSe chalcogenide glasses observed by wideband quadrature frequency-resolved spectroscopy

Journal of materials science. Materials in electronics, 2007-10, Vol.18 (1), p.97-101

2007

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Erbium incorporation in plasma-deposited amorphous silicon

Journal of non-crystalline solids, 2000-05, Vol.266, p.614-618

2000

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Fundamental Optical Properties of Materials I

Optical Properties of Condensed Matter and Applications, 2006, Vol.6, p.1-25

2006

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Electronic properties of erbium doped amorphous silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2001, Vol.81 (1-3), p.71-73

2001

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Erbium incorporation in plasma-deposited amorphous silicon

Journal of non-crystalline solids, 2000, Vol.266-69, p.614-618

2000

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Optically erasable samarium-doped fluorophosphate glasses for high-dose measurements in microbeam radiation therapy

Solution-processed Er3+-doped As3S7 chalcogenide films: optical properties and 1.5 μm photoluminescence activated by thermal treatment

Optical properties of Er-doped Gax(Ge0.3Se0.7)100−x glasses

Samarium-Doped Fluorochlorozirconate Glass-Ceramics as Red-Emitting X-Ray Phosphors

Excitation diffusion due to photon trapping in GeGaSe glasses heavily doped with Er super(3+)

Solution-processed Er 3+ -doped As 3 S 7 chalcogenide films: optical properties and 1.5 μm photoluminescence activated by thermal treatment

Springer Handbook of Electronic and Photonic Materials

Erratum to “Optical properties of divalent samarium-doped fluorochlorozirconate glasses and glass ceramics” [Opt. Mater. 31 (2009) 1459–1466]

The nature of photoconductivity decay spectral dependence in a-Si:H

Thermally Induced Nanostructures in Samarium-Doped Glass Ceramics for X-Ray Sensor Applications

Influence of UV irradiation on a-Si:H film growth

Influence of UV irradiation on a-Si:H film growth

The nature of photoconductivity decay spectral dependence in a-Si:H

Photoluminescence measurements of Er-doped chalcogenide glasses

Slow luminescence from Er3+ centers in Er-Doped GeGaSe chalcogenide glasses observed by wideband quadrature frequency-resolved spectroscopy

Characterization of super(4)I sub(9/2) &#85 96; super(4)F sub(3/2) optical transitions in trivalent Nd super(3+) ions in GaLaS glass

Observation of 4F3/2→4I15/2 radiative transition in Nd3+ ions in GaLaS glass using frequency-resolved PL spectroscopy

Observation of 4 F 3/2 → 4 I 15/2 radiative transition in Nd 3+ ions in GaLaS glass using frequency‐resolved PL spectroscopy

Quadrature frequency resolved spectroscopy (QFRS) of radiative transitions of Er 3+ and Nd 3+ ions in chalcogenide glasses (ChGs)

Slow luminescence from Er super(3+) centers in Er-Doped GeGaSe chalcogenide glasses observed by wideband quadrature frequency-resolved spectroscopy

Erbium incorporation in plasma-deposited amorphous silicon

Fundamental Optical Properties of Materials I

Electronic properties of erbium doped amorphous silicon

Erbium incorporation in plasma-deposited amorphous silicon

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