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Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Strain in Ultrathin SiGeSn Layers in a Silicon Matrix

JETP letters, 2017-12, Vol.106 (12), p.780-784

2017

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Resonance Raman scattering by optical phonons in unstrained germanium quantum dots

Physical review. B, Condensed matter and materials physics, 2005-09, Vol.72 (11), Article 115416

2005

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Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy

Journal of crystal growth, 2017-11, Vol.478, p.205-211

2017

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Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Nanotechnology, 2009-08, Vol.20 (34), p.345702-345702

2009

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Fabrication and optical properties of silicon nanopillars

Journal of physics. Conference series, 2014-01, Vol.541 (1), p.12074-5

2014

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An electron–hole spectrum of Ge/Si structures with Ge quantum dots: photoconductivity measurements

Nanotechnology, 2009-04, Vol.20 (17), p.175401-175401

2009

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Raman resonance in the strained Ge quantum dot array

Nanotechnology, 2008-07, Vol.19 (27), p.275402-275402

2008

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Optical phonons of GeSbTe alloys: Influence of structural disorder

Journal of alloys and compounds, 2023-05, Vol.942, p.169122, Article 169122

2023

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RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

Thin solid films, 2000-07, Vol.369 (1-2), p.79-83

2000

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Properties of silicon oversaturated with implanted hydrogen

Thin solid films, 2002-02, Vol.403, p.500-504

2002

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Quantum dots of Ge in a GaAs/ZnSe/Ge unstrained heterosystem: fabrication and properties

Nanotechnology, 2001-12, Vol.12 (4), p.437-440

2001

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Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

Journal of applied physics, 2014-04, Vol.115 (14)

2014

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Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy

Journal of applied physics, 2016-04, Vol.119 (13)

2016

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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Solid state communications, 2004-01, Vol.129 (1), p.63-68

2004

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Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots

Journal of experimental and theoretical physics, 2011-09, Vol.113 (3), p.510-515

2011

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Optical phonons in Ge quantum dots obtained on Si(111)

JETP letters, 2002-03, Vol.75 (6), p.264-267

2002

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Raman resonance in the strained Gequantum dot array

Nanotechnology, 2008-07, Vol.19 (27), p.275402 (6)-275402 (6)

2008

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Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

Semiconductors (Woodbury, N.Y.), 2011-07, Vol.45 (7), p.907-911

2011

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Resonant Reflectance in Silicon Nanorods Arrays

Solid state phenomena, 2015-10, Vol.245, p.8-13

2015

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Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer

Physics of the solid state, 2004-01, Vol.46 (1), p.80-84

2004

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Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(111) system

Journal of crystal growth, 2009, Vol.311 (15), p.3898-3903

2009

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Raman and photoluminescence investigations of the H + ion implanted silicon-on-insulator structure formed by hydrogen ion cut

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.186 (1), p.329-333

2002

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Formation of nanocrystalline silicon films using high-dose H+ ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing

Semiconductors (Woodbury, N.Y.), 2004-01, Vol.38 (1), p.107-112

2004

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The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix

Solid state phenomena, 2005-12, Vol.108-109, p.39-44

2005

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Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy

Strain in Ultrathin SiGeSn Layers in a Silicon Matrix

Resonance Raman scattering by optical phonons in unstrained germanium quantum dots

Sn – Induced decomposition of SiGeSn alloys grown on Si by molecular-beam epitaxy

Raman determination of uniformity of multilayer Si/Ge structures with Ge quantum dots

Fabrication and optical properties of silicon nanopillars

An electron–hole spectrum of Ge/Si structures with Ge quantum dots: photoconductivity measurements

Raman resonance in the strained Ge quantum dot array

Optical phonons of GeSbTe alloys: Influence of structural disorder

RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

Properties of silicon oversaturated with implanted hydrogen

Quantum dots of Ge in a GaAs/ZnSe/Ge unstrained heterosystem: fabrication and properties

Super-dense array of Ge quantum dots grown on Si(100) by low-temperature molecular beam epitaxy

Photoconductivity of ultra-thin Ge(GeSn) layers grown in Si by low-temperature molecular beam epitaxy

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots

Optical phonons in Ge quantum dots obtained on Si(111)

Raman resonance in the strained Gequantum dot array

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

Resonant Reflectance in Silicon Nanorods Arrays

Growth of germanium nanoislands and nanowires on singular and vicinal Si(111) surfaces prior to the formation of a wetting layer

Formation of Ge nanoislands before the completion of a wetting layer in the Ge/Si(111) system

Raman and photoluminescence investigations of the H + ion implanted silicon-on-insulator structure formed by hydrogen ion cut

Formation of nanocrystalline silicon films using high-dose H+ ion implantation into silicon-on-insulator layers with subsequent rapid thermal annealing

The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix

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