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Origin of efficiency droop in GaN-based light-emitting diodes

Applied physics letters, 2007-10, Vol.91 (18), p.183507-183507-3

2007

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Data-driven acceleration of photonic simulations

Scientific reports, 2019-12, Vol.9 (1), p.19728-19728, Article 19728

2019

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Performance of Antireflection Coatings Consisting of Multiple Discrete Layers and Comparison with Continuously Graded Antireflection Coatings

Applied physics express, 2010-08, Vol.3 (8), p.82502

2010

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Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges

Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (3), Article 035303

Schubert, Martin F.

2010

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Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Applied physics letters, 2019-06, Vol.114 (25)

2019

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Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

Applied physics letters, 2007-12, Vol.91 (23)

2007

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High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes

Journal of applied physics, 2008-04, Vol.103 (8)

2008

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Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Applied physics letters, 2009-01, Vol.94 (1), p.011113-011113-3

2009

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Publisher Correction: Data-driven acceleration of photonic simulations

Scientific reports, 2020-02, Vol.10 (1), p.3330-3330, Article 3330

2020

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Genetic Algorithm for Innovative Device Designs in High-Efficiency III–V Nitride Light-Emitting Diodes

Applied physics express, 2012-01, Vol.5 (1), p.12102

2012

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Polarization-charge tunnel junctions for ultraviolet light-emitters without p -type contact

Applied physics letters, 2010-01, Vol.96 (3), p.031102-031102-3

Schubert, Martin F.

2010

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Distributed Bragg reflector consisting of high- and low-refractive-index thin film layers made of the same material

Applied physics letters, 2007-04, Vol.90 (14)

2007

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On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

Applied physics letters, 2009-02, Vol.94 (8)

2009

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Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Applied physics letters, 2010-03, Vol.96 (12), p.121110-121110-3

2010

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Effects of polarization-field tuning in GaInN light-emitting diodes

Applied physics letters, 2011-07, Vol.99 (4), p.041105-041105-3

2011

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Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

Applied physics letters, 2009-11, Vol.95 (19), p.191105-191105-3

2009

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Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics

Applied physics letters, 2008-12, Vol.93 (25), p.251108-251108-3

2008

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Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact

Advanced materials (Weinheim), 2008-02, Vol.20 (4), p.801-804

2008

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Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

Applied physics letters, 2008-07, Vol.93 (4)

2008

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Polarization of light emission by 460nm GaInN∕GaN light-emitting diodes grown on (0001) oriented sapphire substrates

Applied physics letters, 2007-07, Vol.91 (5)

2007

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Linearly polarized emission from GaInN lightemitting diodes with polarization-enhancing reflector

Optics express, 2007-09, Vol.15 (18), p.11213-11218

2007

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Refractive-Index-Matched Indium–Tin-Oxide Electrodes for Liquid Crystal Displays

Japanese Journal of Applied Physics, 2009-12, Vol.48 (12), p.120203

2009

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Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells

Applied physics letters, 2010-03, Vol.96 (13)

2010

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Effect of heterointerface polarization charges and well width uponcapture and dwell time for electrons and holes above GaInN/GaNquantum wells

Applied physics letters, 2010-03, Vol.96 (13), p.131102-131102-3

2010

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EFFICIENCY DROOP IN GaInN HIGH-POWER LIGHT-EMITTING DIODES

International journal of high speed electronics, 2011-06, Vol.20 (2), p.247-265

2011

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Origin of efficiency droop in GaN-based light-emitting diodes

Data-driven acceleration of photonic simulations

Performance of Antireflection Coatings Consisting of Multiple Discrete Layers and Comparison with Continuously Graded Antireflection Coatings

Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Publisher Correction: Data-driven acceleration of photonic simulations

Genetic Algorithm for Innovative Device Designs in High-Efficiency III–V Nitride Light-Emitting Diodes

Polarization-charge tunnel junctions for ultraviolet light-emitters without p -type contact

Distributed Bragg reflector consisting of high- and low-refractive-index thin film layers made of the same material

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Effects of polarization-field tuning in GaInN light-emitting diodes

Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics

Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

Polarization of light emission by 460nm GaInN∕GaN light-emitting diodes grown on (0001) oriented sapphire substrates

Linearly polarized emission from GaInN lightemitting diodes with polarization-enhancing reflector

Refractive-Index-Matched Indium–Tin-Oxide Electrodes for Liquid Crystal Displays

Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells

Effect of heterointerface polarization charges and well width uponcapture and dwell time for electrons and holes above GaInN/GaNquantum wells

EFFICIENCY DROOP IN GaInN HIGH-POWER LIGHT-EMITTING DIODES

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