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Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: a route towards low-cost and high-performance III–V photovoltaics

Energy & environmental science, 2019-02, Vol.12 (2), p.756-766

2019

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Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

Applied physics letters, 2008-07, Vol.93 (2)

2008

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Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

Journal of crystal growth, 2011, Vol.314 (1), p.92-96

2011

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Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

Electronics letters, 2016-01, Vol.52 (2), p.157-159

2016

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The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

Applied physics letters, 2013-01, Vol.102 (4)

2013

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High opto-electronic quality n-type single-crystalline-like GaAs thin films on flexible metal substrates

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (31), p.7919-7926

2017

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Hydrogen-related, deeply bound excitons in Mg-doped GaN films

Applied physics letters, 2013-08, Vol.103 (8)

2013

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Carrier transport properties of Mg-doped InAlN films

Electronics letters, 2012-09, Vol.48 (20), p.1306-1308

2012

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High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

Applied physics letters, 2009-07, Vol.95 (1), p.011108-011108-3

2009

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Control of quantum-confined Stark effect in InGaN ∕ GaN multiple quantum well active region by p -type layer for III-nitride-based visible light emitting diodes

Applied physics letters, 2008-03, Vol.92 (10), p.101113-101113-3

2008

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High performance GaN pin rectifiers grown on free-standing GaN substrates

Electronics letters, 2006, Vol.42 (22), p.1313-1314

2006

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Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors

Applied physics letters, 2007-02, Vol.90 (9), p.093509-093509-3

2007

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Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates

Applied physics letters, 2008-01, Vol.92 (1)

2008

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Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

Applied physics letters, 2011-09, Vol.99 (10), p.103502-103502-3

2011

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III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge

Applied physics letters, 2008-03, Vol.92 (13), p.133513-133513-3

2008

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Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth

Applied physics letters, 2009-04, Vol.94 (17), p.171912-171912-3

2009

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GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates

Applied physics letters, 2006-05, Vol.88 (19)

2006

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High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition

Journal of crystal growth, 2007, Vol.298, p.852-856

2007

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Traveling dipole domains in AlGaN/GaN heterostructures and the direct generation of millimeter-wave oscillations

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2285-2287

2011

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Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors

Applied physics letters, 2006-08, Vol.89 (8)

2006

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Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers

Journal of electronic materials, 2008-05, Vol.37 (5), p.558-563

2008

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Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates

Electronics letters, 2007, Vol.43 (6), p.366-368

2007

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Acne-photodynamic therapy with intra-lesional injection of 5-aminolevulinic acid

Photodermatology, photoimmunology & photomedicine, 2009-02, Vol.25 (1), p.57-58

2009

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Surface treatment on the growth surface of semi-insulating GaN bulk substrate for III-nitride heterostructure field-effect transistors

Physica status solidi. C, 2008-05, Vol.5 (6), p.1849-1851

2008

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Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition

Applied physics letters, 2011-08, Vol.99 (7)

2011

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Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: a route towards low-cost and high-performance III–V photovoltaics

Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells

High opto-electronic quality n-type single-crystalline-like GaAs thin films on flexible metal substrates

Hydrogen-related, deeply bound excitons in Mg-doped GaN films

Carrier transport properties of Mg-doped InAlN films

High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures

Control of quantum-confined Stark effect in InGaN ∕ GaN multiple quantum well active region by p -type layer for III-nitride-based visible light emitting diodes

High performance GaN pin rectifiers grown on free-standing GaN substrates

Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors

Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates

Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge

Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth

GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates

High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition

Traveling dipole domains in AlGaN/GaN heterostructures and the direct generation of millimeter-wave oscillations

Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors

Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers

Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates

Acne-photodynamic therapy with intra-lesional injection of 5-aminolevulinic acid

Surface treatment on the growth surface of semi-insulating GaN bulk substrate for III-nitride heterostructure field-effect transistors

Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition

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