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Design and Phase Noise Measurements of an Ultrafast Dual-Modulus Prescaler in 130 nm SiGe:C BiCMOS

IEEE transactions on microwave theory and techniques, 2024-01, Vol.72 (1), p.1-13

2024

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A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications

IEEE journal of solid-state circuits, 2014-12, Vol.49 (12), p.2938-2950

2014

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Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Proceedings of the IEEE, 2017-06, Vol.105 (6), p.1035-1050

2017

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A 79 GHz SiGe Doherty Power Amplifier Suitable for Next-Generation Automotive Radar

IEEE journal of microwaves, 2024-10, Vol.4 (4), p.721-732

2024

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A 142-GHz 4/5 Dual-Modulus Prescaler for Wideband and Low Noise Frequency Synthesizers in 130-nm SiGe:C BiCMOS

IEEE microwave and wireless technology letters (Print), 2023-06, Vol.33 (6), p.1-4

2023

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Effects of Guard-Ring Structures on the Performance of Silicon Avalanche Photodetectors Fabricated With Standard CMOS Technology

IEEE electron device letters, 2012-01, Vol.33 (1), p.80-82

2012

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Drain-extended MOS transistors capable for operation at 10 V and at radio frequencies

Solid-state electronics, 2011-11, Vol.65-66, p.45-50

2011

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14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS

2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014, p.256-257

2014

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High-performance SiGe HBTs for next generation BiCMOS technology

Semiconductor science and technology, 2018-11, Vol.33 (11), p.114003

2018

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Base doping and dopant profile control of SiGe npn and pnp HBTs

Applied surface science, 2008-07, Vol.254 (19), p.6013-6016

2008

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SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay

IEEE electron device letters, 2014, Vol.35 (8), p.814-816

2014

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A 140-180-GHz Broadband Amplifier with 7 dBm OP1dB and 400 GHz GBW in SiGe BiCMOS

2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015, p.1-4

2015

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SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

IEEE journal of microwaves, 2021-01, Vol.1 (1), p.288-298

2021

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SiGe HBT CML Ring Oscillator With 2.3-ps Gate Delay at Cryogenic Temperatures

IEEE transactions on electron devices, 2010-05, Vol.57 (5), p.1183-1187

2010

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3-Gb/s 60-GHz Link With SiGe BiCMOS Receiver Front-End and CMOS Mixed-Mode QPSK Demodulator

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2011, 11(4), 44, pp.256-261

2011

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Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

IEEE electron device letters, 2015-07, Vol.36 (7), p.642-644

2015

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A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps

IEEE journal of solid-state circuits, 2010-09, Vol.45 (9), p.1678-1686

2010

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A 245 GHz LNA in SiGe Technology

IEEE microwave and wireless components letters, 2012-10, Vol.22 (10), p.533-535

2012

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A compact and fully integrated FMCW radar transceiver combined with a dielectric lens

International journal of microwave and wireless technologies, 2023-12, p.1-12

2023

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Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications

Journal of instrumentation, 2021-12, Vol.16 (12), p.P12038

2021

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Experimental verification of TCAD simulation for high-performance SiGe HBTs

2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2017, p.94-96

2017

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Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4803-4809

2022

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(Invited) Advanced Transistor Architectures for Half-Terahertz SiGe HBTs

ECS transactions, 2013, Vol.50 (9), p.61-71

2013

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(Invited) Nickel and Nickel-Platinum Silicide for BiCMOS Devices

ECS transactions, 2020-09, Vol.98 (5), p.351-361

2020

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A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications

IEEE journal of solid-state circuits, 2022-07, Vol.57 (7), p.2024-2034

2022

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Design and Phase Noise Measurements of an Ultrafast Dual-Modulus Prescaler in 130 nm SiGe:C BiCMOS

A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

A 79 GHz SiGe Doherty Power Amplifier Suitable for Next-Generation Automotive Radar

A 142-GHz 4/5 Dual-Modulus Prescaler for Wideband and Low Noise Frequency Synthesizers in 130-nm SiGe:C BiCMOS

Effects of Guard-Ring Structures on the Performance of Silicon Avalanche Photodetectors Fabricated With Standard CMOS Technology

Drain-extended MOS transistors capable for operation at 10 V and at radio frequencies

14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS

High-performance SiGe HBTs for next generation BiCMOS technology

Base doping and dopant profile control of SiGe npn and pnp HBTs

SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay

A 140-180-GHz Broadband Amplifier with 7 dBm OP1dB and 400 GHz GBW in SiGe BiCMOS

SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

SiGe HBT CML Ring Oscillator With 2.3-ps Gate Delay at Cryogenic Temperatures

3-Gb/s 60-GHz Link With SiGe BiCMOS Receiver Front-End and CMOS Mixed-Mode QPSK Demodulator

Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology

A 0.13 \mu} SiGe BiCMOS Technology Featuring f /f of 240/330 GHz and Gate Delays Below 3 ps

A 245 GHz LNA in SiGe Technology

A compact and fully integrated FMCW radar transceiver combined with a dielectric lens

Measurements and analysis of different front-end configurations for monolithic SiGe BiCMOS pixel detectors for HEP applications

Experimental verification of TCAD simulation for high-performance SiGe HBTs

Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress

(Invited) Advanced Transistor Architectures for Half-Terahertz SiGe HBTs

(Invited) Nickel and Nickel-Platinum Silicide for BiCMOS Devices

A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications

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