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Physik der Halbleiterbauelemente

1st edition, 2021

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Integrated One Diode―One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

Nano letters, 2014-02, Vol.14 (2), p.813-818

2014

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Physical and chemical mechanisms in oxide-based resistance random access memory

Nanoscale research letters, 2015-03, Vol.10 (1), p.120-120, Article 120

2015

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Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Nanoscale research letters, 2017-10, Vol.12 (1), p.1-6, Article 574

2017

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A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1811-1815

2022

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Investigation of the Capacitance–Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment

ACS applied materials & interfaces, 2019-10, Vol.11 (43), p.40196-40203

2019

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Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

RSC advances, 2018-01, Vol.8 (13), p.6925-693

2018

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Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

IEEE electron device letters, 2013-09, Vol.34 (9), p.1157-1159

2013

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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

IEEE electron device letters, 2013-03, Vol.34 (3), p.399-401

2013

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Resistance random access memory

Materials today (Kidlington, England), 2016-06, Vol.19 (5), p.254-264

2016

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Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

IEEE electron device letters, 2014-06, Vol.35 (6), p.630-632

2014

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Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

IEEE electron device letters, 2016-04, Vol.37 (4), p.408-411

2016

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Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

IEEE electron device letters, 2014-06, Vol.35 (6), p.633-635

2014

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Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

IEEE electron device letters, 2014-05, Vol.35 (5), p.530-532

2014

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Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM

Applied physics letters, 2016-09, Vol.109 (13)

2016

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Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors

Advanced electronic materials, 2023-04, Vol.9 (4), p.n/a

2023

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Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

Applied physics letters, 2014-12, Vol.105 (22)

2014

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Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Nanoscale research letters, 2014-01, Vol.9 (1), p.52-52, Article 52

2014

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Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

Applied physics letters, 2014-03, Vol.104 (13)

2014

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The influence of temperature on set voltage for different high resistance state in 1T1R devices

Applied physics express, 2019-02, Vol.12 (2), p.24004

2019

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Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

Nanomaterials (Basel, Switzerland), 2021-08, Vol.11 (9), p.2204

2021

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A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.341-345

2018

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Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.322-328

2019

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Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Japanese Journal of Applied Physics, 2017-01, Vol.56 (1), p.10303-010303

2017

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Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

Scientific reports, 2018-05, Vol.8 (1), p.8153-9, Article 8153

2018

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Physik der Halbleiterbauelemente

Integrated One Diode―One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

Physical and chemical mechanisms in oxide-based resistance random access memory

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)

Investigation of the Capacitance–Voltage Electrical Characteristics of Thin-Film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment

Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer

Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Resistance random access memory

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM

Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors

Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory

Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

The influence of temperature on set voltage for different high resistance state in 1T1R devices

Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory

Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold

Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

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