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Monte Carlo simulation of planar GaAs nanowire growth

Journal of crystal growth, 2024-04, Vol.632, p.127631, Article 127631

2024

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Simulation of GaAs nanowire annealing

Computational materials science, 2023-09, Vol.228, p.112310, Article 112310

2023

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Langmuir evaporation of GaAs(111)A and GaAs(111)B: Monte Carlo simulation

Applied surface science, 2021-02, Vol.540, p.148281, Article 148281

2021

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Time evolution of GaAs(111) surface morphology and desorption rate during Langmuir evaporation: Monte Carlo simulation

Materials science in semiconductor processing, 2021-11, Vol.134, p.106025, Article 106025

2021

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Metal droplet formation and motion during the III-V semiconductor evaporation

Materials science in semiconductor processing, 2019-09, Vol.100, p.319-325

2019

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Effect of silicon surface orientation on the Au droplet motion

Surfaces and interfaces, 2023-10, Vol.41, p.103193, Article 103193

2023

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Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(001): Experiment and Monte Carlo simulation

Applied surface science, 2015-12, Vol.359, p.372-379

2015

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Monte Carlo simulation of GaAs(001) surface smoothing in equilibrium conditions

Applied surface science, 2015-04, Vol.333, p.141-146

2015

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Concentric GaAs Nanorings Growth Modelling

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.639

2018

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Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.618-621

2018

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Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth

Semiconductors (Woodbury, N.Y.), 2015, Vol.49 (1), p.60-68

2015

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Monte Carlo simulation of the effect of silicon monoxide on silicon-nanocluster formation

Semiconductors (Woodbury, N.Y.), 2014-07, Vol.48 (7), p.891-898

2014

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3D-model of epitaxial growth on porous {111} and {100} Si surfaces

Computer physics communications, 2002-08, Vol.147 (1), p.272-275

2002

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Simulation of surface relief effect on ALD process

Computational materials science, 2006-05, Vol.36 (1), p.36-41

2006

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Edge-dimer row – The reason of three-bilayer steps and islands stability on Si(1 1 1)-7 × 7

Surface science, 2006-08, Vol.600 (15), p.3079-3086

2006

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Influence of Schwoebel barrier and diffusion anisotropy on step density oscillation amplitude during epitaxial growth

Computational materials science, 2006-05, Vol.36 (1), p.180-183

2006

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14 - Monte Carlo Simulation of Semiconductor Nanostructure Growth

Advances in Semiconductor Nanostructures, 2017, p.345-364

2017

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Interlayer atomic diffusion as the reason for self-assembled quantum dot formation

Computer physics communications, 2002-08, Vol.147 (1), p.255-258

2002

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Monte Carlo simulation of steps behavior on Si(111) surface during sublimation

Thin solid films, 2000-12, Vol.380 (1), p.61-63

2000

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Examination of Dimer Formation on Si(OOl) by Monte Carlo Simulation

2006 8th International Conference on Actual Problems of Electronic Instrument Engineering, 2006, p.269-269

2006

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IEEE_Xplore

Desynchronization mode of 2D-island creation on the vicinal surface during MBE growth

Applied surface science, 1998-01, Vol.123-124, p.729-733

1998

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Monte Carlo simulation of initial stages of Si (111) Oxidation by O2 near critical conditions

2008 9th International Workshop and Tutorials on Electron Devices and Materials, 2008, p.8-11

2008

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IEEE_Xplore

10 - Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

Advances in Semiconductor Nanostructures, 2017, p.255-277

2017

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Initial stages of nanoislands formation on Si(111) 7/spl times/7 surface

Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005, 2005, p.27-29

2005

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IEEE_Xplore

Ab Initio Calculations of the Si(001) Surface Reconstructions using Density Functional Theory

International Workshops and Tutorials on Electron Devices and Materials, 2006, p.55-57

2006

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IEEE_Xplore

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Monte Carlo simulation of planar GaAs nanowire growth

Simulation of GaAs nanowire annealing

Langmuir evaporation of GaAs(111)A and GaAs(111)B: Monte Carlo simulation

Time evolution of GaAs(111) surface morphology and desorption rate during Langmuir evaporation: Monte Carlo simulation

Metal droplet formation and motion during the III-V semiconductor evaporation

Effect of silicon surface orientation on the Au droplet motion

Anisotropy in Ostwald ripening and step-terraced surface formation on GaAs(001): Experiment and Monte Carlo simulation

Monte Carlo simulation of GaAs(001) surface smoothing in equilibrium conditions

Concentric GaAs Nanorings Growth Modelling

Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation

Simulated growth of GaAs nanowires: Catalytic and self-catalyzed growth

Monte Carlo simulation of the effect of silicon monoxide on silicon-nanocluster formation

3D-model of epitaxial growth on porous {111} and {100} Si surfaces

Simulation of surface relief effect on ALD process

Edge-dimer row – The reason of three-bilayer steps and islands stability on Si(1 1 1)-7 × 7

Influence of Schwoebel barrier and diffusion anisotropy on step density oscillation amplitude during epitaxial growth

14 - Monte Carlo Simulation of Semiconductor Nanostructure Growth

Interlayer atomic diffusion as the reason for self-assembled quantum dot formation

Monte Carlo simulation of steps behavior on Si(111) surface during sublimation

Examination of Dimer Formation on Si(OOl) by Monte Carlo Simulation

Desynchronization mode of 2D-island creation on the vicinal surface during MBE growth

Monte Carlo simulation of initial stages of Si (111) Oxidation by O2 near critical conditions

10 - Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

Initial stages of nanoislands formation on Si(111) 7/spl times/7 surface

Ab Initio Calculations of the Si(001) Surface Reconstructions using Density Functional Theory

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