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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901

2009

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IEEE_Xplore

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Applied physics letters, 2022-02, Vol.120 (8)

2022

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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Microelectronics and reliability, 2010-06, Vol.50 (6), p.767-773

2010

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Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Microelectronics and reliability, 2011-02, Vol.51 (2), p.201-206

2011

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Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

2014 IEEE International Reliability Physics Symposium, 2014, p.6C.5.1-6C.5.4

2014

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IEEE_Xplore

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Microelectronics and reliability, 2010-06, Vol.50 (6), p.758-762

2010

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Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2667-2674

2012

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IEEE_Xplore

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Applied physics letters, 2009-07, Vol.95 (3), p.033510-033510-3

2009

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Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7

2024

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IEEE_Xplore

A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

2014 Integrated Communications, Navigation and Surveillance Conference (ICNS) Conference Proceedings, 2014, p.U1-1-U1-12

2014

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IEEE_Xplore

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23)

2010

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Electromigration in strapped metal layers with large dimensions for lateral power device applications

2014 IEEE International Reliability Physics Symposium, 2014, p.2A.4.1-2A.4.4

2014

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IEEE_Xplore

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3132-3138

2017

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IEEE_Xplore

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.890-895

2019

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IEEE_Xplore

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2012-04, Vol.100 (17), p.172109-172109-3

2012

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Strapped Cu interconnect for enhancing electromigration limit for power device application

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.368-371

2020

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IEEE_Xplore

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-5

2019

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IEEE_Xplore

Current Crowding Impact on Electromigration in Al Interconnects

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-6

2019

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IEEE_Xplore

Application reliability validation of GaN power devices

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.20.5.1-20.5.4

2016

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IEEE_Xplore

Electromigration current limit relaxation for power device interconnects

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.68-71

2018

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IEEE_Xplore

Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1611-1613

2011

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Impact of self-heating effect in hot carrier injection modeling

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.315-318

2018

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IEEE_Xplore

Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits

Information Security Applications, p.150-161

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Impact of gate placement on RF power degradation in GaN high electron mobility transistors

Microelectronics and reliability, 2012, Vol.52 (1), p.33-38

2012

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Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23), p.233509-233509-3

2010

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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)

A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Electromigration in strapped metal layers with large dimensions for lateral power device applications

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Strapped Cu interconnect for enhancing electromigration limit for power device application

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

Current Crowding Impact on Electromigration in Al Interconnects

Application reliability validation of GaN power devices

Electromigration current limit relaxation for power device interconnects

Traps and defects in pre- and post- stressed AlGaN-GaN high electron mobility transistors

Impact of self-heating effect in hot carrier injection modeling

Glitch Recall: A Hardware Trojan Exploiting Natural Glitches in Logic Circuits

Impact of gate placement on RF power degradation in GaN high electron mobility transistors

Evolution of structural defects associated with electrical degradationin AlGaN/GaN high electron mobility transistors

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