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Polarization Property Associated with Surface Plasmon Resonance in a Palladium Thin-Film Coated Aluminum Grating in a Conical Mounting and Its Application to Hydrogen Gas Detection

Sensors (Basel, Switzerland), 2024-03, Vol.24 (6), p.1990

2024

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Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

IEEE transactions on nuclear science, 2020-12, Vol.67 (12), p.2481-2489

2020

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Investigation into Ethanol Concentration Changes of Ethanol–Water Solution Using Polarization Property Associated with Surface Plasmon Resonance in Aluminum Grating in Conical Mounting

Sensors and materials, 2023-01, Vol.35 (11), p.3551

2023

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Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation

Journal of robotics and mechatronics, 2024-02, Vol.36 (1), p.88-94

2024

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Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 ○C

AIP advances, 2020-05, Vol.10 (5), p.055306-055306-6

2020

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Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators

ECS transactions, 2016-08, Vol.75 (8), p.481-487

2016

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Au induced low-temperature formation of preferentially (111)-oriented crystalline Ge on insulator

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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Fabrication of Back-Side Illuminated Complementary Metal Oxide Semiconductor Image Sensor Using Compliant Bump

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DB01-04DB01-8

2010

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Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

Japanese Journal of Applied Physics, 2016-03, Vol.55 (4S)

2016

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Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

Thin solid films, 2014-04, Vol.557, p.151-154

2014

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Rapid change in polarization accompanying Fabry–Pérot resonance in anodic porous alumina coated with a gold thin film

Applied optics (2004), 2022-12, Vol.61 (34), p.10178

2022

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Low temperature formation of high-quality crystalline Ge (111) by improving Au catalyst crystallinity

Journal of crystal growth, 2021-10, Vol.572, p.126270, Article 126270

2021

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Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se2 Solar Cells

Jpn J Appl Phys, 2012-11, Vol.51 (11), p.111802-111802-4

2012

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Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2

2024

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Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1−xGex (0≦x≦1) on SiO2

Applied physics letters, 2003-03, Vol.82 (13), p.2148-2150

2003

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Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing

Applied surface science, 2004-03, Vol.224 (1-4), p.231-234

2004

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Low Temperature Annealing of Electron, Neutron and Proton Irradiation Effects on SiC Radiation Detectors

IEEE transactions on nuclear science, 2023-10, Vol.70 (10), p.1-1

2023

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Ge fraction dependent improved thermal stability of in situ doped boron in polycrystalline Si1−xGex (⩽x⩽0.5) films on SiON

Journal of applied physics, 2005-03, Vol.97 (5)

2005

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Direct formation of strained Si on insulator by laser annealing

Thin solid films, 2006-06, Vol.508 (1), p.96-98

2006

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Study of deep levels in the Mg2Si grown by vertical Bridgeman method

Japanese Journal of Applied Physics, 2023-05, Vol.62 (SD), p.SD1012

2023

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Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices

Physica status solidi. C, 2012-10, Vol.9 (10-11), p.2058-2061

2012

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Study of deep levels in the Mg 2 Si grown by vertical Bridgeman method

Japanese Journal of Applied Physics, 2023-05, Vol.62 (SD), p.SD1012

2023

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Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2

Thin solid films, 2001-02, Vol.383 (1-2), p.104-106

2001

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Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 4B), p.1933-1936

2003

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Improved Oxidation-Induced Ge Condensation Technique Using H + Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3147

2006

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Polarization Property Associated with Surface Plasmon Resonance in a Palladium Thin-Film Coated Aluminum Grating in a Conical Mounting and Its Application to Hydrogen Gas Detection

Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors

Investigation into Ethanol Concentration Changes of Ethanol–Water Solution Using Polarization Property Associated with Surface Plasmon Resonance in Aluminum Grating in Conical Mounting

Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation

Au induced lateral crystallization of amorphous Ge with stress stimulation at 130 ○C

Thermoelectric Properties of Ge-Rich GeSn Films Grown on Insulators

Au induced low-temperature formation of preferentially (111)-oriented crystalline Ge on insulator

Fabrication of Back-Side Illuminated Complementary Metal Oxide Semiconductor Image Sensor Using Compliant Bump

Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2

Rapid change in polarization accompanying Fabry–Pérot resonance in anodic porous alumina coated with a gold thin film

Low temperature formation of high-quality crystalline Ge (111) by improving Au catalyst crystallinity

Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se2 Solar Cells

Enhancement of Mg-induced lateral crystallization of amorphous germanium on an insulating substrate by two-step annealing

Ge-fraction-dependent metal-induced lateral crystallization of amorphous-Si1−xGex (0≦x≦1) on SiO2

Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing

Low Temperature Annealing of Electron, Neutron and Proton Irradiation Effects on SiC Radiation Detectors

Ge fraction dependent improved thermal stability of in situ doped boron in polycrystalline Si1−xGex (⩽x⩽0.5) films on SiON

Direct formation of strained Si on insulator by laser annealing

Study of deep levels in the Mg2Si grown by vertical Bridgeman method

Local compressive stress generation in electron irradiated boron-doped Si0.75Ge0.25/Si devices

Study of deep levels in the Mg 2 Si grown by vertical Bridgeman method

Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2

Metal-Induced Solid-Phase Crystallization of Amorphous SiGe Films on Insulator

Improved Oxidation-Induced Ge Condensation Technique Using H + Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator

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