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High-rate HMDSO-based coatings in open air using atmospheric-pressure plasma jet

Journal of non-crystalline solids, 2012-09, Vol.358 (17), p.2462-2465

2012

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Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma

Thin solid films, 2010-10, Vol.519 (1), p.235-239

2010

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An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

Journal of physics. Condensed matter, 2011-10, Vol.23 (39), p.394205-np

2011

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Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors

Surface & coatings technology, 2013-11, Vol.234, p.2-7

2013

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High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

Thin solid films, 2008-11, Vol.517 (1), p.242-244

2008

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Study on the Growth of Microcrystalline Silicon Films in Atmospheric-Pressure VHF Plasma Using Porous Carbon Electrode

Journal of physics. Conference series, 2013-03, Vol.417 (1), p.12052-6

2013

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Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

Thin solid films, 2005-05, Vol.479 (1), p.17-23

2005

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Defect-free growth of epitaxial silicon at low temperatures (500-800 °C) by atmospheric pressure plasma chemical vapor deposition

Applied physics. A, Materials science & processing, 2005-11, Vol.81 (6), p.1139-1144

2005

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Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition

Journal of non-crystalline solids, 2005-04, Vol.351 (8), p.741-747

2005

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Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition

Thin solid films, 2006-02, Vol.496 (2), p.259-265

2006

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Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H2/CH4 plasma

Thin solid films, 2008-08, Vol.516 (19), p.6580-6584

2008

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Formation of silicon dioxide layers at low temperatures (150–400 °C) by atmospheric pressure plasma oxidation of silicon

Science and technology of advanced materials, 2007-01, Vol.8 (3), p.137-141

2007

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High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition

Thin solid films, 2003-11, Vol.444 (1), p.138-145

2003

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Investigation of structural properties of high-rate deposited SiNx films prepared at low temperatures (100-300 °C) by atmospheric-pressure plasma CVD

Physica status solidi. C, 2010-04, Vol.7 (3-4), p.824-827

2010

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In situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD

Surface and interface analysis, 2008-06, Vol.40 (6-7), p.984-987

2008

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Characterization of microcrystalline Si films deposited at low temperatures with high rates by atmospheric-pressure plasma CVD

Physica status solidi. C, 2010-04, Vol.7 (3-4), p.545-548

2010

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Characterization of hydrogenated amorphous Si1 − xCx films prepared at extremely high rates using very high frequency plasma at atmospheric pressure

Journal of physics. D, Applied physics, 2003-12, Vol.36 (23), p.3057-3063

2003

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Reduced ratio of male to female births in Japan

International journal of epidemiology, 1999-06, Vol.28 (3), p.597-597

1999

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Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors: Atmospheric Pressure Plasma

Surface & coatings technology, 2013, Vol.234, p.2-7

2013

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Lifetime of metastable fluorine atoms

Applied physics. B, Lasers and optics, 2001, Vol.72 (2), p.227-230

2001

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Attempts to Separate Female Ascaris suum Antigen and to Investigate its Partial Characterization

The veterinary journal (1997), 2003-03, Vol.165 (2), p.164-168

2003

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Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H 2/CH 4 plasma

Thin solid films, 2008, Vol.516 (19), p.6580-6584

2008

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An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma : ATOMICALLY CONTROLLED FABRICATION

Journal of physics. Condensed matter, 2011, Vol.23 (39)

2011

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The centenary of the enactment of the law for prohibiting minors from smoking in Japan

Tobacco control, 2000-06, Vol.9 (2), p.258-258

2000

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Velocity spectrometer for a neutral atomic beam

Applied physics. B, Lasers and optics, 2000-12, Vol.71 (6), p.787-793

2000

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High-rate HMDSO-based coatings in open air using atmospheric-pressure plasma jet

Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors

High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD

Study on the Growth of Microcrystalline Silicon Films in Atmospheric-Pressure VHF Plasma Using Porous Carbon Electrode

Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition

Defect-free growth of epitaxial silicon at low temperatures (500-800 °C) by atmospheric pressure plasma chemical vapor deposition

Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition

Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition

Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H2/CH4 plasma

Formation of silicon dioxide layers at low temperatures (150–400 °C) by atmospheric pressure plasma oxidation of silicon

High-rate growth of epitaxial silicon at low temperatures (530–690 °C) by atmospheric pressure plasma chemical vapor deposition

Investigation of structural properties of high-rate deposited SiNx films prepared at low temperatures (100-300 °C) by atmospheric-pressure plasma CVD

In situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD

Characterization of microcrystalline Si films deposited at low temperatures with high rates by atmospheric-pressure plasma CVD

Characterization of hydrogenated amorphous Si1 − xCx films prepared at extremely high rates using very high frequency plasma at atmospheric pressure

Reduced ratio of male to female births in Japan

Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors: Atmospheric Pressure Plasma

Lifetime of metastable fluorine atoms

Attempts to Separate Female Ascaris suum Antigen and to Investigate its Partial Characterization

Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H 2/CH 4 plasma

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma : ATOMICALLY CONTROLLED FABRICATION

The centenary of the enactment of the law for prohibiting minors from smoking in Japan

Velocity spectrometer for a neutral atomic beam

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