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Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC

Journal of applied physics, 2018-09, Vol.124 (12)

2018

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Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing

Journal of applied physics, 2017-07, Vol.122 (4)

2017

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Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing

Journal of applied physics, 2018-07, Vol.124 (2)

2018

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Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique

Journal of crystal growth, 2017-06, Vol.468, p.889-893

2017

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Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

Journal of crystal growth, 2008-02, Vol.310 (4), p.757-765

2008

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Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching

Journal of crystal growth, 2007-08, Vol.306 (2), p.254-261

2007

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Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers

Applied physics letters, 2005-05, Vol.86 (20)

2005

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X-ray microbeam three-dimensional topography for dislocation strain-field analysis of 4H-SiC

Journal of applied physics, 2013-07, Vol.114 (2)

2013

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Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography

Journal of crystal growth, 2009-02, Vol.311 (5), p.1416-1422

2009

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Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers

Materials science forum, 2013-01, Vol.740-742, p.653-656

2013

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High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

Materials science forum, 2009, Vol.600-603, p.305-308

2009

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A new algorithm for N-dimensional Hilbert scanning

IEEE transactions on image processing, 1999-07, Vol.8 (7), p.964-973

1999

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IEEE_Xplore

Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers

Materials science forum, 2004-01, Vol.457-460, p.565-568

2004

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Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

Journal of crystal growth, 2002-04, Vol.237, p.1206-1212

2002

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Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer

Materials science forum, 2009-01, Vol.615-617, p.67-72

2009

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Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Materials science forum, 2010-01, Vol.645-648, p.77-82

2010

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Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

Materials science forum, 2009-01, Vol.600-603, p.267-272

2009

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Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayers

Journal of applied crystallography, 2005-06, Vol.38 (3), p.442-447

2005

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High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Journal of materials research, 2007-04, Vol.22 (4), p.845-849

2007

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Image processing: dealing with texture

Second edition., 2021

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Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

Materials science forum, 2007-01, Vol.556-557, p.271-274

2007

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Infrared attenuated total reflection spectroscopy of 6H–SiC(0001) and (0001̄) surfaces

Journal of applied physics, 1999-04, Vol.85 (7), p.3569-3575

1999

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Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC

Materials science forum, 2006-10, Vol.527-529, p.489-492

2006

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Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

Materials science forum, 2006-10, Vol.527-529, p.415-418

2006

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Infrared spectroscopy of hydrides on the 6H-SiC surface

Applied physics letters, 1997-06, Vol.70 (23), p.3072-3074

1997

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Two-photon-excited, three-dimensional photoluminescence imaging and dislocation-line analysis of threading dislocations in 4H-SiC

Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing

Glide velocities of Si-core partial dislocations for double-Shockley stacking fault expansion in heavily nitrogen-doped SiC during high-temperature annealing

Observation of double Shockley stacking fault expansion in heavily-nitrogen-doped 4H-SiC using PL technique

Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching

Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers

X-ray microbeam three-dimensional topography for dislocation strain-field analysis of 4H-SiC

Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography

Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

A new algorithm for N-dimensional Hilbert scanning

Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers

Epitaxial growth of thick 4H–SiC layers in a vertical radiant-heating reactor

Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer

Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayers

High-resolution x-ray topography of dislocations in 4H-SiC epilayers

Image processing: dealing with texture

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process

Infrared attenuated total reflection spectroscopy of 6H–SiC(0001) and (0001̄) surfaces

Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC

Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers

Infrared spectroscopy of hydrides on the 6H-SiC surface

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