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Growth of single crystals of Hg(Br x I 1− x ) 2 and their detection capability

Journal of alloys and compounds, 2005-09, Vol.400 (1), p.249-251

2005

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AC conductivity of doped Bi12SiO20 crystals

Materials science & engineering. B, Solid-state materials for advanced technology, 2000-08, Vol.77 (1), p.88-92

2000

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Study of the concentration distribution of SiC vapour in the crystal growth zone

Materials science & engineering. B, Solid-state materials for advanced technology, 1993-09, Vol.21 (1), p.83-87

1993

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Impurity potential distribution and density of states in a heavily doped, slightly compensated semiconductor

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1995-11, Vol.72 (5), p.475-487

1995

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Effects induced by fluctuating alloy potential on the impurity levels in semiconductor solid solutions

Semiconductor science and technology, 1988-12, Vol.3 (12), p.1217-1220

1988

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Dielectric behavior of mixed HgBrxI2-x single crystals

Journal of materials science letters, 2000-06, Vol.19 (12), p.1019-1020

2000

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Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations

Semiconductor science and technology, 1987-08, Vol.2 (8), p.537-541

1987

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Percolation Conductivity in Polycrystalline Silicon at Moderate Electrical Fields

Physica status solidi. B. Basic research, 1990-03, Vol.158 (1), p.K43-K47

1990

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Analysis of microhardness data in TlxIn1-xSe

Journal of materials science, 1995-11, Vol.30 (22), p.5576-5580

1995

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Growth and characterization of TlGaTe2

Materials research bulletin, 1995-08, Vol.30 (8), p.981-985

1995

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Hopping conductivity in heavily doped strongly compensated GaAs

Physica Status Solidi (b), 1979-01, Vol.91 (1), p.311-318

1979

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On the transport kinetics of silicon carbide in the silicon-scandium-carbon system

Journal of crystal growth, 1981-01, Vol.51 (2), p.223-226

1981

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Electron mobility in heavily doped and compensated gallium arsenide due to scattering by potential fluctuations

Journal of physics. C, Solid state physics, 1985-05, Vol.18 (14), p.L377-L381

1985

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Path-integral calculation of the density of states in heavily doped, strongly compensated semiconductors in a magnetic field

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1981-11, Vol.44 (5), p.623-630

1981

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Electron mobility in heavily doped gallium arsenide due to scattering by potential fluctuations

Journal of physics. C, Solid state physics, 1979-10, Vol.12 (19), p.L765-L769

1979

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THE FOX AS DEFINITIVE HOST OF ECHINOCOCCUS GRANULOSUS

Acta veterinaria Academiae Scientiarum Hungaricae, 1965, Vol.15, p.155

1965

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Density of states in heavily doped strongly compensated semiconductors with correlated impurity distribution

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1981-08, Vol.44 (2), p.307-316

1981

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Density-of-states tail in heavily doped closely compensated semiconductors

Journal of physics. C, Solid state physics, 1978-04, Vol.11 (7), p.L253-L256

1978

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On the disorder scattering in GaAs1-xPx solid solutions

Physica status solidi. A, Applied research, 1977-06, Vol.41 (2), p.687-691

1977

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Impurity conductivity in low compensated semiconductors

physica status solidi (b), 1972-03, Vol.50 (1), p.45-52

1972

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Growth and characterization of TlGaTe sub(2)

Materials research bulletin, 1995-01, Vol.30 (8), p.981-985

1995

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Dielectric behavior of mixed HgBr(x)I(2-x) single crystals

Journal of materials science letters, 2000-06, Vol.19 (12), p.1019-1020

2000

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Dielectric behavior of mixed HgBr sub(x)I sub(2-x) single crystals

Journal of materials science letters, 2000-01, Vol.19 (12), p.1019-1020

2000

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Path-integral calculation of the density of states in heavily doped, strongly compensated semiconductors in a magnetic field

Philosophical magazine (Abingdon, England), 1981-11, Vol.44 pt.B, p.623-630

1981

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Peculiarities of silicon carbide crystal growth under the diffusion mechanism of vapour transfer

Advanced materials for optics and electronics, 1992-08, Vol.1 (4), p.203-207

1992

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Growth of single crystals of Hg(Br x I 1− x ) 2 and their detection capability

AC conductivity of doped Bi12SiO20 crystals

Study of the concentration distribution of SiC vapour in the crystal growth zone

Impurity potential distribution and density of states in a heavily doped, slightly compensated semiconductor

Effects induced by fluctuating alloy potential on the impurity levels in semiconductor solid solutions

Dielectric behavior of mixed HgBrxI2-x single crystals

Electron mobility in heavily doped indium phosphide due to scattering by potential fluctuations

Percolation Conductivity in Polycrystalline Silicon at Moderate Electrical Fields

Analysis of microhardness data in TlxIn1-xSe

Growth and characterization of TlGaTe2

Hopping conductivity in heavily doped strongly compensated GaAs

On the transport kinetics of silicon carbide in the silicon-scandium-carbon system

Electron mobility in heavily doped and compensated gallium arsenide due to scattering by potential fluctuations

Path-integral calculation of the density of states in heavily doped, strongly compensated semiconductors in a magnetic field

Electron mobility in heavily doped gallium arsenide due to scattering by potential fluctuations

THE FOX AS DEFINITIVE HOST OF ECHINOCOCCUS GRANULOSUS

Density of states in heavily doped strongly compensated semiconductors with correlated impurity distribution

Density-of-states tail in heavily doped closely compensated semiconductors

On the disorder scattering in GaAs1-xPx solid solutions

Impurity conductivity in low compensated semiconductors

Growth and characterization of TlGaTe sub(2)

Dielectric behavior of mixed HgBr(x)I(2-x) single crystals

Dielectric behavior of mixed HgBr sub(x)I sub(2-x) single crystals

Path-integral calculation of the density of states in heavily doped, strongly compensated semiconductors in a magnetic field

Peculiarities of silicon carbide crystal growth under the diffusion mechanism of vapour transfer

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