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Inauguration Address from the New President of JACG

Journal of the Japanese Association for Crystal Growth, 2022, Vol.49(1), pp.01_49-1

Fujioka, Hiroshi

2022

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Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

Scientific reports, 2019-12, Vol.9 (1), p.20242-5, Article 20242

2019

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Social support needs of caregivers rearing children with severe motor and intellectual disabilities at home in Japan

Frontiers in rehabilitation sciences, 2024, Vol.5, p.1280278-1280278

2024

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Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications

Applied physics express, 2024-01, Vol.17 (1), p.11006

2024

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Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

Scientific reports, 2014-06, Vol.4 (1), p.5325-5325, Article 5325

2014

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Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering

Applied physics express, 2020-06, Vol.13 (6), p.61006

2020

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Electrical properties of Si-doped GaN prepared using pulsed sputtering

Applied physics letters, 2017-01, Vol.110 (4)

2017

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Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes

Applied physics letters, 2021-02, Vol.118 (7)

2021

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Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering

Applied physics express, 2024-01, Vol.17 (1), p.11002

2024

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Wide range doping controllability of p-type GaN films prepared via pulsed sputtering

Applied physics letters, 2019-01, Vol.114 (3)

2019

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Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering

Applied physics express, 2017-10, Vol.10 (10), p.101002

2017

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Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN

Applied physics letters, 2020-11, Vol.117 (19)

2020

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Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO

Scientific reports, 2017-10, Vol.7 (1), p.12820-6, Article 12820

2017

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Field-effect transistors based on cubic indium nitride

Scientific reports, 2014-02, Vol.4 (1), p.3951-3951, Article 3951

2014

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Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

PloS one, 2021-10, Vol.16 (10)

2021

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Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

PloS one, 2021-10, Vol.16 (10), p.e0258647-e0258647

2021

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Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition

physica status solidi (b), 2018-03, Vol.255 (3), p.n/a

2018

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Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils

Scientific reports, 2017-05, Vol.7 (1), p.2112-5, Article 2112

2017

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High-current-density indium nitride ultrathin-film transistors on glass substrates

Applied physics letters, 2016-10, Vol.109 (14)

2016

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Proposal of oxide-formed two-step wet etching process for n-GaN

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD18

2019

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ICCGE-20 / ISSCG-18

Journal of the Japanese Association for Crystal Growth, 2023, Vol.50(3), pp.50-3-08

2023

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Fabrication of InGaN thin-film transistors using pulsed sputtering deposition

Scientific reports, 2016-07, Vol.6 (1), p.29500-29500, Article 29500

2016

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Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers

Journal of applied physics, 2019-08, Vol.126 (7)

2019

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AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

Scientific reports, 2019-04, Vol.9 (1), p.6254-6254, Article 6254

2019

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Inauguration Address from the New President of JACG

Optical characteristics of highly conductive n-type GaN prepared by pulsed sputtering deposition

Social support needs of caregivers rearing children with severe motor and intellectual disabilities at home in Japan

Pulsed sputtering selective epitaxial formation of highly degenerate n-type GaN ohmic contacts for GaN HEMT applications

Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

Coherent epitaxial growth of superconducting NbN ultrathin films on AlN by sputtering

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Heavily Si-doped pulsed sputtering deposited GaN for tunneling junction contacts in UV-A light emitting diodes

Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering

Wide range doping controllability of p-type GaN films prepared via pulsed sputtering

Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering

Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN

Pulsed sputtering epitaxial growth of m-plane InGaN lattice-matched to ZnO

Field-effect transistors based on cubic indium nitride

Dramatic reduction in process temperature of InGaN-based light-emitting diodes by pulsed sputtering growth technique

Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

Accuracy of BIS monitoring using a novel interface device connecting conventional needle-electrodes and BIS sensors during frontal neurosurgical procedures

Epitaxial Growth of Thick Polar and Semipolar InN Films on Yttria‐Stabilized Zirconia Using Pulsed Sputtering Deposition

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils

High-current-density indium nitride ultrathin-film transistors on glass substrates

Proposal of oxide-formed two-step wet etching process for n-GaN

ICCGE-20 / ISSCG-18

Fabrication of InGaN thin-film transistors using pulsed sputtering deposition

Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers

AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature

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