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Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Applied physics letters, 2018-04, Vol.112 (15)

2018

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Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

Applied physics letters, 2016-02, Vol.108 (6)

2016

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Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

Journal of luminescence, 2017-06, Vol.186, p.243-246

2017

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A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

Symmetry (Basel), 2022-08, Vol.14 (8), p.1721

2022

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Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

Journal of physics. D, Applied physics, 2016-03, Vol.49 (14), p.145104-145108

2016

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High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

Applied physics letters, 2013-07, Vol.103 (2), p.21109

2013

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UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure

Journal of luminescence, 2017-07, Vol.187, p.428-432

2017

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Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

Optics communications, 2015-02, Vol.336, p.1-4

2015

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Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

Applied physics letters, 2013-04, Vol.102 (16)

2013

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High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1423-1429

2012

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Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

Applied physics letters, 2014-02, Vol.104 (5)

2014

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n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1−xN electron-blocking layer

Journal of physics. D, Applied physics, 2013-02, Vol.46 (6)

2013

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Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Scientific reports, 2014-09, Vol.4 (1), p.6322-6322, Article 6322

2014

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Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD

Journal of physics. D, Applied physics, 2008-02, Vol.41 (3), p.035101-035101 (5)

2008

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Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes

Journal of luminescence, 2013-03, Vol.135, p.160-163

2013

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Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal–organic chemical vapor deposition

Journal of luminescence, 2009, Vol.129 (1), p.86-89

2009

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Photoelectron spectroscopy study of the interactions between ErF3 dopants and Alq3 hosts for near-infrared organic light-emitting diodes

Applied surface science, 2014-08, Vol.309, p.22-26

2014

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A series of asymmetrical phthalocyanines: synthesis and near infrared properties

Molecules (Basel, Switzerland), 2013-04, Vol.18 (4), p.4628-4639

2013

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A hydrogel-like form-stable phase change material with high loading efficiency supported by a three dimensional metal–organic network

Chemical engineering journal (Lausanne, Switzerland : 1996), 2021-09, Vol.420, p.129898, Article 129898

2021

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Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes

Journal of luminescence, 2011-08, Vol.131 (8), p.1645-1648

2011

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Study of arsenic doping ZnO thin films grown by metal–organic chemical vapor deposition via x-ray photoelectron spectroscopy

Journal of physics. Condensed matter, 2008-07, Vol.20 (29), p.292202-292202 (5)

2008

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Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure

Journal of luminescence, 2011-04, Vol.131 (4), p.825-828

2011

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Crack-free Al 0.5 Ga 0.5 N epilayer grown on SiC substrate by in situ SiN x interlayer

Materials science in semiconductor processing, 2016-01, Vol.41, p.291-296

2016

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Probing into the effect of Auger recombination mechanism on zero bias resistance―area product in In1―xGaxAs detector

Solid state communications, 2011-12, Vol.151 (24), p.1953-1957

2011

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Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE

A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

UV-visible broad spectrum light emitting device of ZnO/MgO/ITO structure

Study on the electroluminescence properties of diodes based on n-ZnO/p-NiO/p-Si heterojunction

Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1−xN electron-blocking layer

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD

Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodes

Room temperature electroluminescence from ZnO/Si heterojunction devices grown by metal–organic chemical vapor deposition

Photoelectron spectroscopy study of the interactions between ErF3 dopants and Alq3 hosts for near-infrared organic light-emitting diodes

A series of asymmetrical phthalocyanines: synthesis and near infrared properties

A hydrogel-like form-stable phase change material with high loading efficiency supported by a three dimensional metal–organic network

Effect of MgZnO barrier layer on the UV emission of n-ZnO/p-Si heterojunction diodes

Study of arsenic doping ZnO thin films grown by metal–organic chemical vapor deposition via x-ray photoelectron spectroscopy

Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure

Crack-free Al 0.5 Ga 0.5 N epilayer grown on SiC substrate by in situ SiN x interlayer

Probing into the effect of Auger recombination mechanism on zero bias resistance―area product in In1―xGaxAs detector

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