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Unique optical properties of AlGaN alloys and related ultraviolet emitters

Applied physics letters, 2004-06, Vol.84 (25), p.5264-5266

2004

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Band structure and fundamental optical transitions in wurtzite AlN

Applied physics letters, 2003-12, Vol.83 (25), p.5163-5165

2003

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Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys

Applied physics letters, 2005-05, Vol.86 (22)

2005

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Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

Applied physics letters, 2003-08, Vol.83 (5), p.878-880

2003

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Tetracene air-gap single-crystal field-effect transistors

Applied physics letters, 2007-04, Vol.90 (16), p.162106-162106-3

2007

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Optical properties of AlN and GaN in elevated temperatures

Applied physics letters, 2004-10, Vol.85 (16), p.3489-3491

2004

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Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

Applied physics letters, 2003-03, Vol.82 (11), p.1694-1696

2003

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Optical and electrical properties of Al-rich AlGaN alloys

Applied physics letters, 2001-11, Vol.79 (20), p.3245-3247

2001

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Growth and optical properties of InxAlyGa1−x−yN quaternary alloys

Applied physics letters, 2001-01, Vol.78 (1), p.61-63

2001

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Band-edge photoluminescence of AlN epilayers

Applied physics letters, 2002-10, Vol.81 (18), p.3365-3367

2002

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Photoluminescence studies of Si-doped AlN epilayers

Applied physics letters, 2003-10, Vol.83 (14), p.2787-2789

2003

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Optical properties of the nitrogen vacancy in AlN epilayers

Applied physics letters, 2004-02, Vol.84 (7), p.1090-1092

2004

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Achieving highly conductive AlGaN alloys with high Al contents

Applied physics letters, 2002-08, Vol.81 (6), p.1038-1040

2002

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Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

Applied physics letters, 2002-04, Vol.80 (17), p.3099-3101

2002

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Acceptor-bound exciton transition in Mg-doped AlN epilayer

Applied physics letters, 2004-09, Vol.85 (12), p.2271-2273

2004

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Growth and optical studies of two-dimensional electron gas of Al-rich AlGaN/GaN heterostructures

Applied physics letters, 2002-09, Vol.81 (10), p.1809-1811

2002

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Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells

Applied physics letters, 2001-06, Vol.78 (23), p.3690-3692

2001

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Simultaneous generation of ions and high-order harmonics from thin conjugated polymer foil irradiated with ultrahigh contrast laser

Applied physics letters, 2011-10, Vol.99 (18), p.181501-181501-3

2011

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Patterned selective growth of carbon nanotubes and large field emission from vertically well-aligned carbon nanotube field emitter arrays

Applied physics letters, 2001-02, Vol.78 (7), p.901-903

2001

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Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy

Applied physics letters, 2006-06, Vol.88 (26), p.261919-261919-3

2006

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Deep impurity transitions involving cation vacancies and complexesin AlGaN alloys

Applied physics letters, 2005-05, Vol.86 (22), p.222108-222108-3

2005

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Improved diffusion barrier by stuffing the grain boundaries of TiN with a thin Al interlayer for Cu metallization

Applied physics letters, 2001-10, Vol.79 (16), p.2549-2551

2001

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High-power laser discharge stabilization with magnetic fields

Applied physics letters, 1980-07, Vol.37 (2), p.130-133

1980

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The photoinitiated impulse-enhanced electrically excited (PIE) discharge for high-power cw laser applications

Applied physics letters, 1978-01, Vol.32 (7), p.418-420

1978

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The photoinitiated impulse-enhanced electrically excited /PIE/ discharge for high-power CW laser applications

Applied physics letters, 1978-04, Vol.32, p.418-420

1978

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Unique optical properties of AlGaN alloys and related ultraviolet emitters

Band structure and fundamental optical transitions in wurtzite AlN

Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys

Mg acceptor level in AlN probed by deep ultraviolet photoluminescence

Tetracene air-gap single-crystal field-effect transistors

Optical properties of AlN and GaN in elevated temperatures

Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers

Optical and electrical properties of Al-rich AlGaN alloys

Growth and optical properties of InxAlyGa1−x−yN quaternary alloys

Band-edge photoluminescence of AlN epilayers

Photoluminescence studies of Si-doped AlN epilayers

Optical properties of the nitrogen vacancy in AlN epilayers

Achieving highly conductive AlGaN alloys with high Al contents

Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures

Acceptor-bound exciton transition in Mg-doped AlN epilayer

Growth and optical studies of two-dimensional electron gas of Al-rich AlGaN/GaN heterostructures

Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells

Simultaneous generation of ions and high-order harmonics from thin conjugated polymer foil irradiated with ultrahigh contrast laser

Patterned selective growth of carbon nanotubes and large field emission from vertically well-aligned carbon nanotube field emitter arrays

Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy

Deep impurity transitions involving cation vacancies and complexesin AlGaN alloys

Improved diffusion barrier by stuffing the grain boundaries of TiN with a thin Al interlayer for Cu metallization

High-power laser discharge stabilization with magnetic fields

The photoinitiated impulse-enhanced electrically excited (PIE) discharge for high-power cw laser applications

The photoinitiated impulse-enhanced electrically excited /PIE/ discharge for high-power CW laser applications

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