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High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Applied physics letters, 2015-04, Vol.106 (14)

2015

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Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Applied physics letters, 2018-02, Vol.112 (6)

2018

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Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

Applied physics letters, 2015-06, Vol.106 (23)

2015

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Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Applied physics letters, 2015-08, Vol.107 (9)

2015

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On the origin of the 265 nm absorption band in AlN bulk crystals

Applied physics letters, 2012-05, Vol.100 (19)

2012

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Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Applied physics letters, 2013-04, Vol.102 (17)

2013

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Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Applied physics letters, 2013-10, Vol.103 (16)

2013

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High free carrier concentration in p-GaN grown on AlN substrates

Applied physics letters, 2017-07, Vol.111 (3)

2017

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Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied physics letters, 2014-12, Vol.105 (22), p.222101

2014

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The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Applied physics letters, 2014-05, Vol.104 (20)

2014

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Polarity control and growth of lateral polarity structures in AlN

Applied physics letters, 2013-05, Vol.102 (18)

2013

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Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Japanese Journal of Applied Physics, 2017-10, Vol.56 (10), p.100302

2017

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Sapphire decomposition and inversion domains in N-polar aluminum nitride

Applied physics letters, 2014-01, Vol.104 (3)

2014

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Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

Applied physics express, 2013-07, Vol.6 (7), p.75504

2013

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Large-font patient written instructions

Journal of the American Academy of Dermatology, 2023-05, Vol.88 (5), p.e183-e183

2023

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Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

Applied physics letters, 2020-01, Vol.116 (3)

2020

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Doping and compensation in Al-rich AlGaN grown on single crystal AlN andsapphire by MOCVD

Applied physics letters, 2018-02, Vol.112 (6)

2018

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Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Applied physics letters, 2014-12, Vol.105 (22)

2014

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Recurrent meningitis in a teenager

The Pediatric infectious disease journal, 2010-10, Vol.29 (10), p.984, 988

2010

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Numerous flesh-colored nodules on the trunk

Cutis (New York, N.Y.), 2019-12, Vol.104 (6), p.E22-E24

2019

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On the origin of the 265nm absorption band in AlN bulk crystals

Applied physics letters, 2012-05, Vol.100 (19), p.191914-191914-5

2012

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An AFM Learning Module Employing Diffraction Gratings

Microscopy today, 2010-11, Vol.18 (6), p.42-48

2010

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Data Collection in the Digital Age: Innovative Alternatives to Student Samples

MIS quarterly, 2014-06, Vol.38 (2), p.355-378

2014

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STELLAR SIGNATURES OF AGN-JET-TRIGGERED STAR FORMATION

The Astrophysical journal, 2014-12, Vol.796 (2), p.1-8

2014

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Detection of Interstellar E-1-cyano-1,3-butadiene in GOTHAM Observations of TMC-1

The Astrophysical journal, 2023-05, Vol.948 (2), p.133

2023

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High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

On the origin of the 265 nm absorption band in AlN bulk crystals

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

High free carrier concentration in p-GaN grown on AlN substrates

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Polarity control and growth of lateral polarity structures in AlN

Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN

Sapphire decomposition and inversion domains in N-polar aluminum nitride

Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

Large-font patient written instructions

Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys

Doping and compensation in Al-rich AlGaN grown on single crystal AlN andsapphire by MOCVD

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

Recurrent meningitis in a teenager

Numerous flesh-colored nodules on the trunk

On the origin of the 265nm absorption band in AlN bulk crystals

An AFM Learning Module Employing Diffraction Gratings

Data Collection in the Digital Age: Innovative Alternatives to Student Samples

STELLAR SIGNATURES OF AGN-JET-TRIGGERED STAR FORMATION

Detection of Interstellar E-1-cyano-1,3-butadiene in GOTHAM Observations of TMC-1

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