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Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

Applied physics letters, 1999-11, Vol.75 (20), p.3138-3140

1999

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COMPARISON OF LONG-TERM RESULTS OF FEMORAL VEIN LIGATION AND TRANSCATHETER THROMBOLYSIS IN THROMBOSIS OF THE FEMORAL SEGMENT

Vestnik hirurgii im. I.I. Grekova, 2019-12, Vol.178 (5), p.62-68

2019

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Sorption-Catalytic Determination of Rutin, Lysine, and Collagen in Pharmaceuticals and Cosmetics

Pharmaceutical chemistry journal, 2015-02, Vol.48 (11), p.753-758

2015

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ОСОБЛИВОСТІ УПРАВЛІННЯ ЕРГАТИЧНОЮ ТЕЛЕКОМУНІКАЦІЙНОЮ СИСТЕМОЮ СПЕЦІАЛЬНОГО ПРИЗНАЧЕННЯ

Системи управління, навігації та зв’язку. Збірник наукових праць, 2018-04, Vol.2 (48), p.14-19

2018

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Comparison of Long-Term Outcomes of Regional Catheter Thrombolysis and Standard Conservative Treatment for Proximal Deep Vein Thrombosis of Lower Extremities

Flebologiia, 2020, Vol.14 (1), p.10

2020

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High breakdown M–I–M structures on bulk AlN

Solid-state electronics, 2002-04, Vol.46 (4), p.573-576

2002

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Characterization of Thin GaN Layers Deposited by Hydride Vapour Phase Epitaxy (HVPE) on 6H- SiC Substrates

MRS proceedings, 2000, Vol.622, Article T5.7.1

2000

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Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy

Semiconductors (Woodbury, N.Y.), 1999-10, Vol.33 (10), p.1067-1071

1999

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The Severity of Manifestations of the Post-Thrombotic Syndrome Following Different Variants of Conservative Treatment of Deep Vein Thrombosis in the Lower Extremities

Flebologiia, 2018, Vol.12 (3), p.118

2018

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Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy

Surface science, 1999-02, Vol.421 (3), p.377-385

1999

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Some new fundamental properties of GaN single-crystal films on SiC and sapphire substrates

Il nuovo cimento della Società italiana di fisica. Sezione D, 1995-11, Vol.17 (11-12), p.1509-1512

1995

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Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy

Surface science, 1999, Vol.421 (3), p.377-385

1999

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The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates

Journal of crystal growth, 1999, Vol.197 (1-2), p.12-18

1999

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Physical Properties of Bulk GaN Crystals Grown by HVPE

MRS Internet journal of nitride semiconductor research, 1997, Vol.2, Article e39

1997

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AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

MRS proceedings, 1997, Vol.482, Article 245

1997

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Physical Properties of Bulk GaN Crystals Grown by HVPE

MRS Internet journal of nitride semiconductor research, 1996-01, Vol.1

1996

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GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

MRS Internet journal of nitride semiconductor research, 1997-01, Vol.2

1997

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GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

MRS Internet journal of nitride semiconductor research, 1996, Vol.1, Article e45

1996

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Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy

Semiconductor science and technology, 1997, Vol.12 (7), p.917-920

1997

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Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system

Semiconductors (Woodbury, N.Y.), 1997-05, Vol.31 (5), p.523

Zubrilov, A. S.

1997

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Imaging spectroscopy of solar radio burst fine structures

Nature communications, 2017-11, Vol.8 (1), p.1-9, Article 1515

2017

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Confinement, heating, and current drive study in Globus-M2 toward a future step of spherical tokamak program in Ioffe Institute

Physics of plasmas, 2024-06, Vol.31 (6)

2024

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TAE-induced fast ion losses and transport at the Globus-M/M2 spherical tokamaks

Physics of plasmas, 2023-07, Vol.30 (7)

2023

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Microbial and Nonvolatile Chemical Diversities of Chinese Dark Teas Are Differed by Latitude and Pile Fermentation

Journal of agricultural and food chemistry, 2022-05, Vol.70 (18), p.5701-5714

2022

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Impact of electronic excitation on the state-to-state vibrational-chemical CO kinetics

Journal of physics. Conference series, 2022-07, Vol.2308 (1), p.12014

2022

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Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

COMPARISON OF LONG-TERM RESULTS OF FEMORAL VEIN LIGATION AND TRANSCATHETER THROMBOLYSIS IN THROMBOSIS OF THE FEMORAL SEGMENT

Sorption-Catalytic Determination of Rutin, Lysine, and Collagen in Pharmaceuticals and Cosmetics

ОСОБЛИВОСТІ УПРАВЛІННЯ ЕРГАТИЧНОЮ ТЕЛЕКОМУНІКАЦІЙНОЮ СИСТЕМОЮ СПЕЦІАЛЬНОГО ПРИЗНАЧЕННЯ

Comparison of Long-Term Outcomes of Regional Catheter Thrombolysis and Standard Conservative Treatment for Proximal Deep Vein Thrombosis of Lower Extremities

High breakdown M–I–M structures on bulk AlN

Characterization of Thin GaN Layers Deposited by Hydride Vapour Phase Epitaxy (HVPE) on 6H- SiC Substrates

Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy

The Severity of Manifestations of the Post-Thrombotic Syndrome Following Different Variants of Conservative Treatment of Deep Vein Thrombosis in the Lower Extremities

Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy

Some new fundamental properties of GaN single-crystal films on SiC and sapphire substrates

Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy

The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates

Physical Properties of Bulk GaN Crystals Grown by HVPE

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

Physical Properties of Bulk GaN Crystals Grown by HVPE

GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy

Luminescence properties of gallium nitride layers grown on silicon carbide substrates by gas-phase epitaxy in a chloride system

Imaging spectroscopy of solar radio burst fine structures

Confinement, heating, and current drive study in Globus-M2 toward a future step of spherical tokamak program in Ioffe Institute

TAE-induced fast ion losses and transport at the Globus-M/M2 spherical tokamaks

Microbial and Nonvolatile Chemical Diversities of Chinese Dark Teas Are Differed by Latitude and Pile Fermentation

Impact of electronic excitation on the state-to-state vibrational-chemical CO kinetics

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