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A review on photoelectrochemical cathodic protection semiconductor thin films for metals

Green energy & environment, 2017-10, Vol.2 (4), p.331-362

2017

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Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

IEEE sensors journal, 2022-02, Vol.22 (3), p.1933-1938

2022

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Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1171-1175

2020

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Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

IEEE sensors journal, 2021-01, Vol.21 (2), p.1273-1278

2021

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Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

IEEE electron device letters, 2020-04, Vol.41 (4), p.601-604

2020

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Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5162-5166

2021

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Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

IEEE electron device letters, 2019-02, Vol.40 (2), p.185-188

2019

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Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

Applied physics letters, 2016-10, Vol.109 (15)

2016

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p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

IEEE sensors journal, 2020-01, Vol.20 (1), p.62-66

2020

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Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

IEEE transactions on microwave theory and techniques, 2024-04, Vol.72 (4), p.2310-2317

2024

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High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4859-4863

2022

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High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

IEEE transactions on microwave theory and techniques, 2023-02, Vol.71 (2), p.898-906

2023

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Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes

IEEE transactions on electron devices, 2021-01, Vol.68 (1), p.311-317

2021

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MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1860-1864

2023

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Regulation of the photogenerated carrier transfer process during photoelectrochemical water splitting: A review

Green energy & environment, 2021-08, Vol.6 (4), p.479-495

2021

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Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

IEEE transactions on electron devices, 2021-06, Vol.68 (6), p.2867-2871

2021

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GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4123-4129

2020

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Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1250-1254

2021

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Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Journal of applied physics, 2019-04, Vol.125 (15)

2019

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Single-sites Rh-phosphide modified carbon nitride photocatalyst for boosting hydrogen evolution under visible light

Applied catalysis. B, Environmental, 2020-10, Vol.274, p.119117, Article 119117

2020

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Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Diamond and related materials, 2017-03, Vol.73, p.1-6

2017

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Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4

Biosensors & bioelectronics, 2020-02, Vol.150, p.111903-111903, Article 111903

2020

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Graphene quantum dot modified g-C3N4 for enhanced photocatalytic oxidation of ammonia performance

RSC advances, 2017-01, Vol.7 (81), p.51687-51694

2017

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Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Chinese physics B, 2022-11, Vol.31 (12), p.127701-594

2022

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Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensions

IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.498-504

2014

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A review on photoelectrochemical cathodic protection semiconductor thin films for metals

Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

Correlation Between Anode Area and Sensitivity for the TiN/GaN Schottky Barrier Diode Temperature Sensor

Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

Enhanced Sensitivity of GaN-Based Temperature Sensor by Using the Series Schottky Barrier Diode Structure

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process

Fabrication of three dimensional diamond ultraviolet photodetector through down-top method

p-NiO/n-GaN Heterostructure Diode for Temperature Sensor Application

Novel Equivalent Current Model for GaN-Based High-Efficiency Microwave Rectification

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

High-Efficiency and High-Current GaN-Based Microwave Rectifier for Wireless Strain Sensing and Monitoring

Terahertz Monolithic Integrated Cavity Filter Based on Cyclic Etched SiC Via-Holes

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

Regulation of the photogenerated carrier transfer process during photoelectrochemical water splitting: A review

Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

GaN Schottky Barrier Diode-Based Wideband and Medium-Power Microwave Rectifier for Wireless Power Transmission

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

Terahertz monolithic integrated waveguide transmission lines based on wide bandgap semiconductor materials

Single-sites Rh-phosphide modified carbon nitride photocatalyst for boosting hydrogen evolution under visible light

Effect of oxygen plasma treatment on the performance of AlGaN/GaN ion-sensitive field-effect transistors

Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4

Graphene quantum dot modified g-C3N4 for enhanced photocatalytic oxidation of ammonia performance

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator

Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel Dimensions

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