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Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2628-2637

2011

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Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide

Nature (London), 2014-11, Vol.515 (7527), p.379-383

2014

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Searching for THz Gunn oscillations in GaN planar nanodiodes

Journal of applied physics, 2012-06, Vol.111 (11), p.113705-113705-9

2012

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Ferroelectric transitions at ferroelectric domain walls found from first principles

Physical review letters, 2014-06, Vol.112 (24), p.247603-247603, Article 247603

2014

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Negative capacitance in multidomain ferroelectric superlattices

Nature (London), 2016-06, Vol.534 (7608), p.524-528

2016

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Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Applied physics letters, 2014-02, Vol.104 (7)

2014

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First-principles model potentials for lattice-dynamical studies: general methodology and example of application to ferroic perovskite oxides

Journal of physics. Condensed matter, 2013-07, Vol.25 (30), p.305401-305401

2013

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Ab Initio indications for giant magnetoelectric effects driven by structural softness

Physical review letters, 2010-07, Vol.105 (3), p.037208-037208, Article 037208

2010

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Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K

IEEE transactions on electron devices, 2020-12, Vol.67 (12), p.5685-5692

2020

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IEEE_Xplore

Magnetoelectric response of multiferroic BiFeO3 and related materials from first-principles calculations

Physical review letters, 2009-12, Vol.103 (26), p.267205-267205

2009

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Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Journal of applied physics, 2021-09, Vol.130 (10)

2021

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Multiferroic phase transition near room temperature in BiFeO3 films

Physical review letters, 2011-11, Vol.107 (23), p.237601-237601

2011

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1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

Applied physics letters, 2019-06, Vol.114 (24)

2019

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Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

Solid-state electronics, 2015-02, Vol.104 (Feb), p.79-85

2015

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Anisotropy Field in Ni Nanostripe Arrays

IEEE transactions on magnetics, 2013-01, Vol.49 (1), p.15-17

2013

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IEEE_Xplore

Study of the temperature dependence of ferromagnetic resonance measurements in nanostructured arrays

Physica status solidi. C, 2014-05, Vol.11 (5-6), p.1089-1092

2014

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Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

Microelectronics Reliability, 2020-11, Vol.114 (ISSN 0026-2714), p.113806, Article 113806

2020

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The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.2917-2924

2010

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IEEE_Xplore

Compact Capacitance Model for OTFTs at Low and Medium Frequencies

IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.638-642

2014

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IEEE_Xplore

Wideband ferromagnetic resonance in nanostructured line arrays

Physica status solidi. C, 2014-05, Vol.11 (5-6), p.1093-1096

2014

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Compact model for short-channel symmetric double-gate junctionless transistors

Solid-state electronics, 2015-09, Vol.111, p.196-203

2015

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On the effect of δ-doping in self-switching diodes

Applied physics letters, 2014-09, Vol.105 (9), p.Article Number: 093505

2014

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Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

Journal of applied physics, 2009-05, Vol.105 (9), p.094504-094504-7

2009

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Self-heating and kink effects in a-Si:H thin film transistors

IEEE transactions on electron devices, 2000-02, Vol.47 (2), p.387-397

2000

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IEEE_Xplore

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Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors

Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide

Searching for THz Gunn oscillations in GaN planar nanodiodes

Ferroelectric transitions at ferroelectric domain walls found from first principles

Negative capacitance in multidomain ferroelectric superlattices

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

First-principles model potentials for lattice-dynamical studies: general methodology and example of application to ferroic perovskite oxides

Ab Initio indications for giant magnetoelectric effects driven by structural softness

Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K

Magnetoelectric response of multiferroic BiFeO3 and related materials from first-principles calculations

Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

Multiferroic phase transition near room temperature in BiFeO3 films

1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

Anisotropy Field in Ni Nanostripe Arrays

Study of the temperature dependence of ferromagnetic resonance measurements in nanostructured arrays

Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

The Equivalent-Thickness Concept for Doped Symmetric DG MOSFETs

Compact Capacitance Model for OTFTs at Low and Medium Frequencies

Wideband ferromagnetic resonance in nanostructured line arrays

Compact model for short-channel symmetric double-gate junctionless transistors

On the effect of δ-doping in self-switching diodes

Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

Self-heating and kink effects in a-Si:H thin film transistors

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