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Nitrogen-doped graphene by microwave plasma chemical vapor deposition

Thin solid films, 2013-01, Vol.528, p.269-273

2013

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The Role of Surface Passivation in Controlling Ge Nanowire Faceting

Nano letters, 2015-12, Vol.15 (12), p.8211-8216

2015

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Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

Applied physics letters, 2004-06, Vol.84 (24), p.4968-4970

2004

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Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location

Applied physics letters, 2012-09, Vol.101 (10)

2012

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Aperiodic SiSn/Si multilayers for thermoelectric applications

Journal of crystal growth, 2014-04, Vol.392, p.49-51

2014

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Growth phenomena of Si and Si/Ge nanowires on Si (1 1 1) by molecular beam epitaxy

Journal of crystal growth, 2006-04, Vol.290 (1), p.6-10

2006

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Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

Journal of crystal growth, 2014-06, Vol.396, p.66-70

2014

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Double-walled carbon nanotubes fabricated by a hydrogen arc discharge method

Carbon (New York), 2001-01, Vol.39 (5), p.761-770

2001

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Gold-enhanced oxidation of MBE-grown silicon nanowires

Semiconductor science and technology, 2008-07, Vol.23 (7), p.075040

2008

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Threading dislocations in epitaxial ferroelectric PbZr0.2Ti0.8O3 films and their effect on polarization backswitching

Philosophical magazine (Abingdon, England), 2006-10, Vol.86 (28), p.4477-4486

2006

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Rapid synthesis of few-layer graphene over Cu foil

Carbon (New York), 2012-04, Vol.50 (4), p.1546-1553

2012

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Shell-like formation of self-organized InAs/GaAs quantum dots

Physical review. B, Condensed matter and materials physics, 2005, Vol.71 (4), p.045325.1-045325.7

2005

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Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals

Solid state sciences, 2008-06, Vol.10 (6), p.702-708

2008

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Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices

Applied physics letters, 2016-03, Vol.108 (12)

2016

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Room-temperature light emission from a highly strained Si/Ge superlattice

Applied physics letters, 2003-10, Vol.83 (15), p.3084-3086

2003

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Switching properties of self-assembled ferroelectric memory cells

Applied physics letters, 1999-08, Vol.75 (8), p.1158-1160

1999

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

IEEE electron device letters, 2009-07, Vol.30 (7), p.700-702

2009

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Substrate temperature dependence of structure and resistivity of SrRuO3 thin films grown by pulsed laser deposition on (100) SrTiO3

Journal of materials research, 1999-11, Vol.14 (11), p.4385-4394

1999

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

IEEE electron device letters, 2009-07, Vol.30 (7), p.700-702

2009

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Initial growth stages of epitaxial BaTiO3 films on vicinal SrTiO3 (001) substrate surfaces

Journal of applied physics, 2002-06, Vol.91 (12), p.10157-10162

2002

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Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕GaN multiple quantum well light emitting diodes

Journal of applied physics, 2004-08, Vol.96 (3), p.1381-1386

2004

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Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (1 1 2¯ 0)

Journal of crystal growth, 2007-03, Vol.300 (1), p.83-89

2007

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Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applications

Applied physics letters, 1998-09, Vol.73 (11), p.1592-1594

1998

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Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures

Thin solid films, 2010-02, Vol.518 (9), p.2555-2561

2010

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Investigation of microstructure and V-defect formation in InxGa1-xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition

Journal of electronic materials, 2005-05, Vol.34 (5), p.605-611

2005

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Nitrogen-doped graphene by microwave plasma chemical vapor deposition

The Role of Surface Passivation in Controlling Ge Nanowire Faceting

Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy

Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location

Aperiodic SiSn/Si multilayers for thermoelectric applications

Growth phenomena of Si and Si/Ge nanowires on Si (1 1 1) by molecular beam epitaxy

Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters

Double-walled carbon nanotubes fabricated by a hydrogen arc discharge method

Gold-enhanced oxidation of MBE-grown silicon nanowires

Threading dislocations in epitaxial ferroelectric PbZr0.2Ti0.8O3 films and their effect on polarization backswitching

Rapid synthesis of few-layer graphene over Cu foil

Shell-like formation of self-organized InAs/GaAs quantum dots

Topotaxial formation of titanium-rich barium titanates during solid state reactions on (110) TiO2 (rutile) and (001) BaTiO3 single crystals

Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices

Room-temperature light emission from a highly strained Si/Ge superlattice

Switching properties of self-assembled ferroelectric memory cells

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

Substrate temperature dependence of structure and resistivity of SrRuO3 thin films grown by pulsed laser deposition on (100) SrTiO3

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

Initial growth stages of epitaxial BaTiO3 films on vicinal SrTiO3 (001) substrate surfaces

Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕GaN multiple quantum well light emitting diodes

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (1 1 2¯ 0)

Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applications

Comparison of the top-down and bottom-up approach to fabricate nanowire-based silicon/germanium heterostructures

Investigation of microstructure and V-defect formation in InxGa1-xN/GaN MQW grown using temperature-gradient metalorganic chemical vapor deposition

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