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Reliability and parasitic issues in GaN-based power HEMTs: a review

Semiconductor science and technology, 2016-08, Vol.31 (9), p.93004

2016

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Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Journal of physics. D, Applied physics, 2021-01, Vol.54 (2), p.25108

2021

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Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

Applied physics letters, 2019-07, Vol.115 (5)

2019

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Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3734-3739

2017

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Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1344-1355

2024

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A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.108-118

2010

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Recent results on the degradation of white LEDs for lighting

Journal of physics. D, Applied physics, 2010-09, Vol.43 (35), p.354007

2010

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On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Applied physics letters, 2016-03, Vol.108 (11)

2016

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Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

Journal of applied physics, 2021-10, Vol.130 (14)

2021

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Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

Applied physics letters, 2020-12, Vol.117 (26)

2020

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Role of defects in the thermal droop of InGaN-based light emitting diodes

Journal of applied physics, 2016-03, Vol.119 (9)

2016

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Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

Journal of applied physics, 2020-05, Vol.127 (18)

2020

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A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Journal of applied physics, 2016-01, Vol.119 (4)

2016

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Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

Applied physics letters, 2014-03, Vol.104 (11)

2014

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Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Applied physics letters, 2014-04, Vol.104 (14)

2014

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Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

Applied physics letters, 2023-05, Vol.122 (18)

2023

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Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs

Applied physics letters, 2023-04, Vol.122 (15)

2023

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Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2008-07, Vol.55 (7), p.1592-1602

2008

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Study and characterization of GaN MOS capacitors: Planar vs trench topographies

Applied physics letters, 2022-04, Vol.120 (14)

2022

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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1554-1561

2004

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Anomalous Kink Effect in GaN High Electron Mobility Transistors

IEEE electron device letters, 2009-02, Vol.30 (2), p.100-102

2009

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Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4432-4437

2022

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Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes

Microelectronics and reliability, 2016-09, Vol.64, p.623-626

2016

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The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.372-377

2019

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N-Doped Mesoporous Carbon from Melamine-Modified Resorcinol-Formaldehyde Polymer Resin as Catalytic Support for Electrochemical Investigation of Formic acid Oxidation Reaction

Journal of inorganic and organometallic polymers and materials, 2024, Vol.34 (5), p.1977-1987

2024

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Reliability and parasitic issues in GaN-based power HEMTs: a review

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress

Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

A Review on the Physical Mechanisms That Limit the Reliability of GaN-Based LEDs

Recent results on the degradation of white LEDs for lighting

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling

Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

Role of defects in the thermal droop of InGaN-based light emitting diodes

Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes

Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs

Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

Study and characterization of GaN MOS capacitors: Planar vs trench topographies

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

Anomalous Kink Effect in GaN High Electron Mobility Transistors

Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices

Degradation of InGaN laser diodes caused by temperature- and current-driven diffusion processes

The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors

N-Doped Mesoporous Carbon from Melamine-Modified Resorcinol-Formaldehyde Polymer Resin as Catalytic Support for Electrochemical Investigation of Formic acid Oxidation Reaction

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