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Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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Nondestructive visualization of threading dislocations in GaN by micro raman mapping

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCB06

2019

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Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs

Applied physics express, 2024-02, Vol.17 (2), p.26501

2024

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Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

Applied physics express, 2018-11, Vol.11 (11), p.111001

2018

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Detection of edge component of threading dislocations in GaN by Raman spectroscopy

Applied physics express, 2018-06, Vol.11 (6), p.61002

2018

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Effect of H 2 addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl 3

Japanese Journal of Applied Physics, 2023-02, Vol.62 (2), p.20903

2023

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Effect of H2 addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl3

Japanese Journal of Applied Physics, 2023-02, Vol.62 (2), p.020903

2023

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Development of RIE-lag Reduction Technique for Si Deep Etching Using Double Protection Layer Method

IEEJ transactions on electrical and electronic engineering, 2010-03, Vol.5 (2), p.125-130

2010

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Development of Si DRIE process allowing simultaneous etching from narrow and wide mask openings

Electronics and communications in Japan, 2011-04, Vol.94 (4), p.36-43

2011

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Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl3 gas supply system

Japanese Journal of Applied Physics, 2022-07, Vol.61 (7), p.070909

2022

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Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl 3 gas supply system

Japanese Journal of Applied Physics, 2022-07, Vol.61 (7), p.70909

2022

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Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

physica status solidi (b), 2020-04, Vol.257 (4), p.n/a

2020

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GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1039

2019

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Improvement of high aspect ratio Si etching by optimized oxygen plasma irradiation inserted DRIE

Journal of micromechanics and microengineering, 2009-09, Vol.19 (9), p.095022-095022 (10)

2009

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Solubility of bis-(2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) in mixed supercritical CO2 and H2 systems for application in supercritical fluid deposition of Cu

The Journal of supercritical fluids, 2015-10, Vol.105, p.193-200

2015

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Technological History of Silicon Dry Etching Process

IEEJ transactions on sensors and micromachines, 2011, Vol.131 (1), p.14-18

2011

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Improvement of the optical transmittance of a micro prism made from a Si substrate by DRIE, oxidation and SiO2 film refilling

Journal of micromechanics and microengineering, 2009-05, Vol.19 (5), p.055019

2009

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Improvement of the optical transmittance of a micro prism made from a Si substrate by DRIE, oxidation and SiO 2 film refilling

Journal of micromechanics and microengineering, 2009-05, Vol.19 (5), p.55019

2009

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Development of fabrication process for integrated micro-optical elements on Si substrate

Sensors and actuators. A. Physical., 2008-05, Vol.143 (1), p.77-83

2008

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Development of RIE-lag Reduction Technique for Si Deep Etching Using Double Protection Layer Method : State-of-the-art MEMS Tecnologies

IEEJ transactions on electrical and electronic engineering, 2010, Vol.5 (2), p.125-130

2010

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Development of Si DRIE Process Allowing Simultaneous Etching from Narrow and Wide Mask Openings

IEEJ transactions on sensors and micromachines, 2008, Vol.128 (11), p.442-448

2008

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Micro Fabrication Technique Using Deep Dry Etching Process

Journal of The Surface Finishing Society of Japan, 2008, Vol.59(2), pp.98-98

2008

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Ultra-Small Laser Scanning Module with High Accuracy Alignment

IEEJ transactions on sensors and micromachines, 2009, Vol.129 (12), p.433-438

2009

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New DRIE Process with Sidewall Protection Layer Formed by O2 Plasma Irradiation

IEEJ transactions on sensors and micromachines, 2003, Vol.123 (12), p.541-547

2003

Volltextzugriff (PDF)

Shear-Flow Instabilities of a Rotating Mercuryin Presence of a Magnetic Field

Journal of the Physical Society of Japan, 1991-08, Vol.60 (8), p.2496-2499

1991

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Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

Nondestructive visualization of threading dislocations in GaN by micro raman mapping

Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs

Determination of edge-component Burgers vector of threading dislocations in GaN crystal by using Raman mapping

Detection of edge component of threading dislocations in GaN by Raman spectroscopy

Effect of H 2 addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl 3

Effect of H2 addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl3

Development of RIE-lag Reduction Technique for Si Deep Etching Using Double Protection Layer Method

Development of Si DRIE process allowing simultaneous etching from narrow and wide mask openings

Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl3 gas supply system

Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl 3 gas supply system

Behavior of Threading Dislocations from GaN Substrate to Epitaxial Layer

GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation

Improvement of high aspect ratio Si etching by optimized oxygen plasma irradiation inserted DRIE

Solubility of bis-(2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) in mixed supercritical CO2 and H2 systems for application in supercritical fluid deposition of Cu

Technological History of Silicon Dry Etching Process

Improvement of the optical transmittance of a micro prism made from a Si substrate by DRIE, oxidation and SiO2 film refilling

Improvement of the optical transmittance of a micro prism made from a Si substrate by DRIE, oxidation and SiO 2 film refilling

Development of fabrication process for integrated micro-optical elements on Si substrate

Development of RIE-lag Reduction Technique for Si Deep Etching Using Double Protection Layer Method : State-of-the-art MEMS Tecnologies

Development of Si DRIE Process Allowing Simultaneous Etching from Narrow and Wide Mask Openings

Micro Fabrication Technique Using Deep Dry Etching Process

Ultra-Small Laser Scanning Module with High Accuracy Alignment

New DRIE Process with Sidewall Protection Layer Formed by O2 Plasma Irradiation

Shear-Flow Instabilities of a Rotating Mercuryin Presence of a Magnetic Field

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