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Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

Applied physics letters, 2012-09, Vol.101 (10)

2012

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Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate

Thin solid films, 2005-04, Vol.476 (2), p.252-257

2005

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Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor

Journal of applied physics, 2001-06, Vol.89 (11), p.6275-6280

2001

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Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

Applied physics letters, 2005-09, Vol.87 (13)

2005

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Ru Films from Bis(ethylcyclopentadienyl)ruthenium Using Ozone as a Reactant by Atomic Layer Deposition for Capacitor Electrodes

Journal of the Electrochemical Society, 2012, Vol.159 (6), p.H560-H564

2012

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Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

Applied physics letters, 2002-11, Vol.81 (22), p.4192-4194

2002

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Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures

Applied physics letters, 2002-04, Vol.80 (14), p.2514-2516

2002

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Modified atomic layer deposition of RuO2 thin films for capacitor electrodes

Applied physics letters, 2007-07, Vol.91 (5)

2007

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Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films

Thin solid films, 2011-06, Vol.519 (16), p.5323-5328

2011

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Improvement of leakage currents of Pt/(Ba, Sr)TiO3/Pt capacitors

Applied physics letters, 1997-06, Vol.70 (22), p.3053-3055

1997

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Crystallization behavior caused by N doping in Ge1Sb4Te7 for PCRAM application

Thin solid films, 2010-09, Vol.518 (22), p.6422-6428

2010

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Process engineering to reduce self-aligned contact failure by reducing process-driven thermal stress on tungsten-dual poly gate stacks in sub-60 nm DRAM devices

Microelectronic engineering, 2012-11, Vol.99, p.33-37

2012

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Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

IEEE electron device letters, 2013-02, Vol.34 (2), p.244-246

2013

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Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

Solid-state electronics, 2011-09, Vol.63 (1), p.115-118

2011

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Alteration for a diffusion barrier design concept in future high-density dynamic and ferroelectric random access memory devices

Progress in materials science, 2003, Vol.48 (4), p.275-371

2003

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Vertical double gate Z-RAM technology with remarkable low voltage operation for DRAM application

2010 Symposium on VLSI Technology, 2010, p.163-164

2010

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Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application

Ceramics international, 2008-05, Vol.34 (4), p.1043-1046

2008

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Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

Journal of the Electrochemical Society, 2011, Vol.158 (4), p.H417

2011

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Composition and Electrical Properties of Metallic Ru Thin Films Deposited Using Ru(C 6 H 6 )(C 6 H 8 ) Precursor

Japanese Journal of Applied Physics, 2002-11, Vol.41 (Part 1, No. 11B), p.6852-6856

2002

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Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate

Japanese Journal of Applied Physics, 2001, Vol.40 (10R), p.5850-5855

2001

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

Jpn J Appl Phys, 2011-04, Vol.50 (4), p.04DD14-04DD14-4

2011

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Investigation of RuTiN and RuTiO diffusion barrier suggested by a new design concept for future high-density memory capacitors

IEEE electron device letters, 2002-04, Vol.23 (4), p.176-178

2002

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Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures

Applied physics letters, 2009-06, Vol.94 (22)

2009

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Effects of Nitrogen Doping and Working Pressure on the Crystallization of Ge1Sb4Te7 Thin Films for PRAM Applications

Journal of the Korean Physical Society, 2009, 55(5), , pp.1896-1900

2009

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Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium

Japanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 2A), p.582-586

2003

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Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate

Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor

Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

Ru Films from Bis(ethylcyclopentadienyl)ruthenium Using Ozone as a Reactant by Atomic Layer Deposition for Capacitor Electrodes

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

Impact of atomic-layer-deposited TiN on the gate oxide quality of W/TiN/SiO2/Si metal–oxide–semiconductor structures

Modified atomic layer deposition of RuO2 thin films for capacitor electrodes

Effects of Ag doping on the crystallization properties of Sb-rich GeSb thin films

Improvement of leakage currents of Pt/(Ba, Sr)TiO3/Pt capacitors

Crystallization behavior caused by N doping in Ge1Sb4Te7 for PCRAM application

Process engineering to reduce self-aligned contact failure by reducing process-driven thermal stress on tungsten-dual poly gate stacks in sub-60 nm DRAM devices

Flicker Noise Behavior in Resistive Memory Devices With Double-Layered Transition Metal Oxide

Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

Alteration for a diffusion barrier design concept in future high-density dynamic and ferroelectric random access memory devices

Vertical double gate Z-RAM technology with remarkable low voltage operation for DRAM application

Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application

Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

Composition and Electrical Properties of Metallic Ru Thin Films Deposited Using Ru(C 6 H 6 )(C 6 H 8 ) Precursor

Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

Investigation of RuTiN and RuTiO diffusion barrier suggested by a new design concept for future high-density memory capacitors

Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures

Effects of Nitrogen Doping and Working Pressure on the Crystallization of Ge1Sb4Te7 Thin Films for PRAM Applications

Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium

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