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Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories

Microelectronic engineering, 2020-01, Vol.221, p.111194, Article 111194

2020

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High-affinity hnRNP A1 binding sites and duplex-forming inverted repeats have similar effects on 5′ splice site selection in support of a common looping out and repression mechanism

RNA (Cambridge), 2002-08, Vol.8 (8), p.1078-1089, Article S1355838202024056

2002

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Characterization of copper grain growth limitations inside narrow wires depending of overburden thickness

Microelectronic engineering, 2008-10, Vol.85 (10), p.1988-1991

2008

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Intronic binding sites for hnRNP A/B and hnRNP F/H proteins stimulate pre-mRNA splicing

PLoS biology, 2006-02, Vol.4 (2), p.e21-e21

2006

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Correlation between electromigration and Cu-contact angle after de-wetting

Microelectronic engineering, 2006-11, Vol.83 (11), p.2373-2376

2006

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Integration of a high density Ta2O5 MIM capacitor following 3D damascene architecture compatible with copper interconnects

Microelectronic engineering, 2006-11, Vol.83 (11-12), p.2163-2168

2006

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New techniques to characterize properties of advanced dielectric barriers for sub-65 nm technology node

Microelectronic engineering, 2006-11, Vol.83 (11), p.2130-2135

2006

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Optical profilometry and AFM measurements comparison on low amplitude deterministic surfaces

2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2019, p.1-4

2019

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La tomodensitométrie haute résolution dans les maladies infiltrantes diffuses du parenchyme pulmonaire : A, B, C et quiz

Feuillets de radiologie, 1997, Vol.37 (1), p.62-73

1997

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A method for historicizing lived experience

Advances in nursing science, 2009-01, Vol.32 (1), p.75-90

Cordeau, Mary Ann

2009

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Lack of effect of position restriction after transthoracic biopsy

Radiology, 2001-04, Vol.219 (1), p.295-295

2001

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Dimethyl Sulfoxide Affects the Selection of Splice Sites

The Journal of biological chemistry, 2001-05, Vol.276 (20), p.17597-17602

2001

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Copper post-electroplating anneal: evaluation of in-line vs. furnace anneal on layer properties

Microelectronic engineering, 2003-11, Vol.70 (2), p.470-477

2003

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Lack of Clinical Efficacy of a Phosphodiesterase-4 Inhibitor for Treatment of Heaves in Horses

Journal of veterinary internal medicine, 2006, Vol.20 (1), p.175

2006

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Case of the day. Noncirrhotic idiopathic portal hypertension (Banti syndrome)

Radiographics, 1990-01, Vol.10 (1), p.114-116

1990

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Etude de fiabilite d’un logiciel de volumetrie automatisee de nodules pulmonaires utilisant un fantome anthropomorphique

Journal de radiologie, 2007-10, Vol.88 (10), p.1389-1390

2007

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Porous low k pore sealing process study for 65 nm and below technologies

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695), 2003, p.245-247

2003

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New techniques to characterize properties of advanced dielectric barriers for sub-65nm technology node

Microelectronic engineering, 2006-11, Vol.83 (11-12), p.2130-2135

2006

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Integration of a high density Ta 2O 5 MIM capacitor following 3D damascene architecture compatible with copper interconnects

Microelectronic engineering, 2006, Vol.83 (11), p.2163-2168

2006

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New techniques to characterize properties of advanced dielectric barriers for sub-65 nm technology node

Microelectronic engineering, 2006, p.83 Issue: 11-12 (2006) 2130-2135

2006

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High-Resolution Computed Tomography of the Airways

Journal of thoracic imaging, 1993, Vol.8 (3), p.213-229

1993

Volltextzugriff (PDF)

Copper metallization for advanced interconnects: the electrochemical revolution

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729), 2004, p.3-5

2004

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Reliable 3D damascene MIM architecture embedded into Cu interconnect for a Ta2O5 capacitor record density of 17 fF/μm2

2007 IEEE Symposium on VLSI Technology, 2007, p.58-59

2007

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300 mm InGaAsOI substrate fabrication using the Smart CutTM technology

2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015, p.1-2

2015

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Copper-SiOC-AirGap integration in a double level metal interconnect

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407), 2000, p.276-277

2000

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Impact of roughness of TiN bottom electrode on the forming voltage of HfO2 based resistive memories

High-affinity hnRNP A1 binding sites and duplex-forming inverted repeats have similar effects on 5′ splice site selection in support of a common looping out and repression mechanism

Characterization of copper grain growth limitations inside narrow wires depending of overburden thickness

Intronic binding sites for hnRNP A/B and hnRNP F/H proteins stimulate pre-mRNA splicing

Correlation between electromigration and Cu-contact angle after de-wetting

Integration of a high density Ta2O5 MIM capacitor following 3D damascene architecture compatible with copper interconnects

New techniques to characterize properties of advanced dielectric barriers for sub-65 nm technology node

Optical profilometry and AFM measurements comparison on low amplitude deterministic surfaces

La tomodensitométrie haute résolution dans les maladies infiltrantes diffuses du parenchyme pulmonaire : A, B, C et quiz

A method for historicizing lived experience

Lack of effect of position restriction after transthoracic biopsy

Dimethyl Sulfoxide Affects the Selection of Splice Sites

Copper post-electroplating anneal: evaluation of in-line vs. furnace anneal on layer properties

Lack of Clinical Efficacy of a Phosphodiesterase-4 Inhibitor for Treatment of Heaves in Horses

Case of the day. Noncirrhotic idiopathic portal hypertension (Banti syndrome)

Etude de fiabilite d’un logiciel de volumetrie automatisee de nodules pulmonaires utilisant un fantome anthropomorphique

Porous low k pore sealing process study for 65 nm and below technologies

New techniques to characterize properties of advanced dielectric barriers for sub-65nm technology node

Integration of a high density Ta 2O 5 MIM capacitor following 3D damascene architecture compatible with copper interconnects

New techniques to characterize properties of advanced dielectric barriers for sub-65 nm technology node

High-Resolution Computed Tomography of the Airways

Copper metallization for advanced interconnects: the electrochemical revolution

Reliable 3D damascene MIM architecture embedded into Cu interconnect for a Ta2O5 capacitor record density of 17 fF/μm2

300 mm InGaAsOI substrate fabrication using the Smart CutTM technology

Copper-SiOC-AirGap integration in a double level metal interconnect

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