UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Incorporation of hemp flour to obtain gluten-free noodles of higher nutritional quality

Agriscientia (Córdoba), 2024-01, Vol.40 (2), p.1-6

2024

Volltextzugriff (PDF)

Etching of InP-based MQW laser structure in a MOCVD reactor by chlorinated compounds

Journal of crystal growth, 1998-12, Vol.195 (1), p.624-629

1998

Volltextzugriff (PDF)

Atomic layer epitaxy of InP

Journal of electronic materials, 1992-03, Vol.21 (3), p.265-268

BERTONE, D

1992

Volltextzugriff (PDF)

Low-cost 1.55-μm InGaAsP-InP spot size converted (SSC) laser with conventional active layers

IEEE photonics technology letters, 1997-08, Vol.9 (8), p.1084-1086

1997

Volltextzugriff (PDF)

Repetition rate, using a mode-locked hybrid distributed Bragg reflector (ML-HDBR) laser source

IEEE photonics technology letters, 2000-03, Vol.12 (3), p.245-247

2000

Volltextzugriff (PDF)

1.55-μm InGaAsP-InP spot-size-converted (SSC) laser with simple technological process

IEEE photonics technology letters, 1998-06, Vol.10 (6), p.775-777

1998

Volltextzugriff (PDF)

MOCVD regrowth of semi-insulating InP and p-n junction blocking layers around laser active stripes

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.715-718

1997

Volltextzugriff (PDF)

Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-pérot lasers, operating at 10-Gb/s, up to 110 °C, with constant current swing

Journal of lightwave technology, 2006, Vol.24 (1), p.143-149

2006

Volltextzugriff (PDF)

Transition from island to continuous InP layer growth on (001) GaAs by MOCVD

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.214-218

1994

Volltextzugriff (PDF)

Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge Fabry-Perot lasers, operating at 10-gb/s, up to 110 deg C, with constant current swing

Journal of lightwave technology, 2006-01, Vol.24 (1), p.143-149

2006

Volltextzugriff (PDF)

Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-Perot lasers, operating at 10-gb/s, up to 110/spl deg/C, with constant current swing

Journal of lightwave technology, 2006-01, Vol.24 (1), p.143-149

2006

Volltextzugriff (PDF)

MOCVD regrowth of InP:Fe, Zn and Si doped on patterned surface by pulsed metalorganic epitaxy (PME)

Seventh International Conference on Indium Phosphide and Related Materials, 1995, p.279-282

1995

Volltextzugriff (PDF)

Home Care for Patients With Chronic Obstructive Pulmonary Disease

Archives of physical medicine and rehabilitation, 2010-04, Vol.91 (4), p.664-665

2010

Volltextzugriff (PDF)

Faire famille aujourd’hui: Normes, résistances et inventions

Berton, Fabienne

2021

Volltextzugriff (PDF)

Low-cost 1.55-mum InGaAsP-InP spot size converted (SSC) laser with conventional active layers

IEEE photonics technology letters, 1997-08, Vol.9 (8), p.1084-1086

1997

Volltextzugriff (PDF)

1.55-mu m InGaAsP-InP spot-size-converted (SSC) laser with simpletechnological process

IEEE photonics technology letters, 1998-06, Vol.10 (6), p.775-777

1998

Volltextzugriff (PDF)

Le crime, le châtiment et les écossais: Crime, Punishment and the Scots

2019

Volltextzugriff (PDF)

Structural characterization techniques for the analysis of semiconductor strained heterostructures

Mikrochimica acta (1966), 1994-12, Vol.114-115 (1), p.431-440

1994

Volltextzugriff (PDF)

Uncooled 20 Gb/s direct modulation of high yield, highly reliable 1300 nm InGaAlAs ridge DFB lasers

2009 Conference on Optical Fiber Communication - incudes post deadline papers, 2009, p.1-3

2009

Volltextzugriff (PDF)

A New Technological Process to Realize InGaAsP/InP Semi-Insulating Buried Heterostructure Lasers Emitting at 1.55 μm

ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference, 1996, p.533-536

1996

Volltextzugriff (PDF)

A New Technological Process for Fabrication of InGaAsP/InP Heterostructure Laser using CBE/MOCVD Growth Techniques

ESSDERC '94: 24th European Solid State Device Research Conference, 1994, p.807-810

1994

Volltextzugriff (PDF)

Le crime, le châtiment et les écossais

2019

Volltextzugriff (PDF)

The bidirectional association between premenstrual disorders and perinatal depression: A nationwide register-based study from Sweden

PLoS medicine, 2024-03, Vol.21 (3), p.e1004363-e1004363

2024

Volltextzugriff (PDF)

Structural characterization techniques for the analysis of semiconductor strained heterostructures

Mikrochimica acta (1966. Print), 1994, Vol.114-15, p.431-440

1994

Volltextzugriff (PDF)

Searching for Primordial Black Holes in the Radio and X-Ray Sky

Physical review letters, 2017-06, Vol.118 (24), p.241101-241101, Article 241101

2017

Volltextzugriff (PDF)

1 – 25 von 404

Suche als RSS-Feed

Aktive Filter

ThemaMale

Nur zeigenMit Volltextzugriff

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(322)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(181)
Physical Sciences
(105)
Physics
(86)
Life Sciences & Biomedicine
(73)
Physics, Particles & Fields
(35)
Astronomy & Astrophysics
(31)
Humans
(30)
Technology
(28)
Female
(21)
Astrophysics
(20)
Biological And Medical Sciences
(19)
Physics, Nuclear
(19)
Humanities And Social Sciences
(17)
Adult
(16)
Exact Sciences And Technology
(16)
Nuclear Physics And Radiation Physics
(16)
Engineering
(15)
Particle Physics
(15)
Physics, Multidisciplinary
(15)
Elementary Particles
(14)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

Incorporation of hemp flour to obtain gluten-free noodles of higher nutritional quality

Etching of InP-based MQW laser structure in a MOCVD reactor by chlorinated compounds

Atomic layer epitaxy of InP

Low-cost 1.55-μm InGaAsP-InP spot size converted (SSC) laser with conventional active layers

Repetition rate, using a mode-locked hybrid distributed Bragg reflector (ML-HDBR) laser source

1.55-μm InGaAsP-InP spot-size-converted (SSC) laser with simple technological process

MOCVD regrowth of semi-insulating InP and p-n junction blocking layers around laser active stripes

Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-pérot lasers, operating at 10-Gb/s, up to 110 °C, with constant current swing

Transition from island to continuous InP layer growth on (001) GaAs by MOCVD

Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge Fabry-Perot lasers, operating at 10-gb/s, up to 110 deg C, with constant current swing

Highly reliable and high-yield 1300-nm InGaAlAs directly modulated ridge fabry-Perot lasers, operating at 10-gb/s, up to 110/spl deg/C, with constant current swing

MOCVD regrowth of InP:Fe, Zn and Si doped on patterned surface by pulsed metalorganic epitaxy (PME)

Home Care for Patients With Chronic Obstructive Pulmonary Disease

Faire famille aujourd’hui: Normes, résistances et inventions

Low-cost 1.55-mum InGaAsP-InP spot size converted (SSC) laser with conventional active layers

1.55-mu m InGaAsP-InP spot-size-converted (SSC) laser with simpletechnological process

Le crime, le châtiment et les écossais: Crime, Punishment and the Scots

Structural characterization techniques for the analysis of semiconductor strained heterostructures

Uncooled 20 Gb/s direct modulation of high yield, highly reliable 1300 nm InGaAlAs ridge DFB lasers

A New Technological Process to Realize InGaAsP/InP Semi-Insulating Buried Heterostructure Lasers Emitting at 1.55 μm

A New Technological Process for Fabrication of InGaAsP/InP Heterostructure Laser using CBE/MOCVD Growth Techniques

Le crime, le châtiment et les écossais

The bidirectional association between premenstrual disorders and perinatal depression: A nationwide register-based study from Sweden

Structural characterization techniques for the analysis of semiconductor strained heterostructures

Searching for Primordial Black Holes in the Radio and X-Ray Sky

Aktive Filter

Suchergebnisse filtern