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Application of complete endoscopic technique in microvascular decompression related tovertebrobasilar artery compression

Zhong hua yi xue za zhi, 2019-09, Vol.99 (33), p.2597

2019

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Back illuminated AlGaN solar-blind photodetectors

Applied physics letters, 2000-09, Vol.77 (12), p.1900-1902

2000

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High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching

Applied physics letters, 2000-10, Vol.77 (18), p.2918-2920

2000

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Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure

Applied physics letters, 1999-11, Vol.75 (18), p.2788-2790

1999

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Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors

IEEE electron device letters, 2001-04, Vol.22 (4), p.157-159

2001

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Delta-doped AlGaN∕AlN∕GaN microwave HFETs grown by metalorganic chemical vapour deposition

Electronics letters, 2002-04, Vol.38 (9), p.428-429

2002

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High-voltage GaN pin vertical rectifiers with 2 mu m thick i-layer

Electronics letters, 2000-11, Vol.36 (23), p.1971-1972

2000

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AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition

Electronics letters, 2000-01, Vol.36 (1), p.80-81

2000

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Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition

Journal of applied physics, 2001-08, Vol.90 (4), p.1817-1822

2001

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Comparison of Corrosion Behavior of CoCrNi Medium-Entropy Alloy with CoCrFeMnNi High-Entropy Alloy in SO2-Polluted Marine Environment

Journal of materials engineering and performance, 2024, Vol.33 (2), p.541-555

2024

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Study on AC Corrosion Behavior of CoCrNi Medium-Entropy Alloy in 3.5% NaCl Solution

Journal of materials engineering and performance, 2023-04, Vol.32 (7), p.2918-2931

2023

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Corrosion Behavior of CoCrFeMnNi High Entropy Alloy in 3.5% NaCl Solution with and without 0.05 M NaHSO3

Journal of materials engineering and performance, 2023-08, Vol.32 (16), p.7545-7555

2023

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AlGaN/AlGaN double-heterojunction ultraviolet light-emitting diodes grown by metal organic chemical vapour deposition

Electronics letters, 2001-09, Vol.37 (19), p.1188-1190

2001

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Study on the Corrosion Behavior of CoCrFeMnNi HEA in NH4Cl Solutions with Different Concentrations

Journal of materials engineering and performance, 2023-05, Vol.32 (9), p.4109-4123

2023

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Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors

Electronics letters, 2001-03, Vol.37 (6), p.393-395

2001

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Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2000-12, Vol.221 (1-4), p.362-367

2000

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Threshold and stability results for an age-structured SEIR epidemic model

Computers & mathematics with applications (1987), 2001-09, Vol.42 (6), p.883-907

2001

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The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

Journal of crystal growth, 2000-12, Vol.221 (1), p.730-733

2000

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Local conductivity and surface photovoltage variations due to magnesium segregation in p -type GaN

Journal of applied physics, 2004-06, Vol.95 (11), p.6225-6231

2004

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Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2000-12, Vol.221 (1), p.240-245

2000

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Microvascular perfusion and cardiac function after revascularization assessed by myocardial contrast echocardiography in patients with acute ST-segment elevation myocardial infarction

Zhōnghuá xīnxuèguănbìng zázhì, 2023-02, Vol.51 (2), p.151

2023

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The related factors of postoperative recurrence in trigeminalneuralgia patients undergoing fully neuroendoscopic microvascular decompression

Zhong hua yi xue za zhi, 2022-08, Vol.102 (31), p.2465-2469

2022

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Zirconium arsenate-modified magnetic nanoparticles: preparation, characterization and application to the enrichment of phosphopeptides

Analyst (London), 2012-02, Vol.137 (4), p.959-967

2012

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Dependence of Device Characteristics on the Intrinsic Material Properties of High-Performance AlGaN/GaN HEMTs

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.213-217

1999

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Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers

IEEE transactions on electron devices, 2001-08, Vol.48 (8), p.1498-1502

2001

Volltextzugriff (PDF)

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Application of complete endoscopic technique in microvascular decompression related tovertebrobasilar artery compression

Back illuminated AlGaN solar-blind photodetectors

High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching

Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure

Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors

Delta-doped AlGaN∕AlN∕GaN microwave HFETs grown by metalorganic chemical vapour deposition

High-voltage GaN pin vertical rectifiers with 2 mu m thick i-layer

AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition

Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition

Comparison of Corrosion Behavior of CoCrNi Medium-Entropy Alloy with CoCrFeMnNi High-Entropy Alloy in SO2-Polluted Marine Environment

Study on AC Corrosion Behavior of CoCrNi Medium-Entropy Alloy in 3.5% NaCl Solution

Corrosion Behavior of CoCrFeMnNi High Entropy Alloy in 3.5% NaCl Solution with and without 0.05 M NaHSO3

AlGaN/AlGaN double-heterojunction ultraviolet light-emitting diodes grown by metal organic chemical vapour deposition

Study on the Corrosion Behavior of CoCrFeMnNi HEA in NH4Cl Solutions with Different Concentrations

Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors

Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Threshold and stability results for an age-structured SEIR epidemic model

The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

Local conductivity and surface photovoltage variations due to magnesium segregation in p -type GaN

Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition

Microvascular perfusion and cardiac function after revascularization assessed by myocardial contrast echocardiography in patients with acute ST-segment elevation myocardial infarction

The related factors of postoperative recurrence in trigeminalneuralgia patients undergoing fully neuroendoscopic microvascular decompression

Zirconium arsenate-modified magnetic nanoparticles: preparation, characterization and application to the enrichment of phosphopeptides

Dependence of Device Characteristics on the Intrinsic Material Properties of High-Performance AlGaN/GaN HEMTs

Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers

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