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Low-temperature electrical characterization of junctionless transistors

Solid-state electronics, 2013-02, Vol.80, p.135-141

2013

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Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Journal of physical chemistry. C, 2014-11, Vol.118 (46), p.26454-26461

2014

Volltextzugriff (PDF)

Less mobility degradation induced by transverse electric-field in junctionless transistors

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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A Simple Method for Estimation of Silicon Film Thickness in Tri-Gate Junctionless Transistors

IEEE electron device letters, 2018-09, Vol.39 (9), p.1282-1285

2018

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Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Journal of applied physics, 2014-12, Vol.116 (24)

2014

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Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Solid-state electronics, 2013-03, Vol.81, p.101-104

2013

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Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

IEEE transactions on electron devices, 2015-01, Vol.62 (1), p.3-8

2015

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Separation of surface accumulation and bulk neutral channel in junctionless transistors

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Solid-state electronics, 2013-03, Vol.81, p.58-62

2013

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Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Nanoscale, 2014-01, Vol.6 (1), p.433-441

2014

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Impact of series resistance on the operation of junctionless transistors

Solid-state electronics, 2017-03, Vol.129, p.103-107

2017

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Series resistance in different operation regime of junctionless transistors

Solid-state electronics, 2018-03, Vol.141, p.92-95

2018

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Behavior of subthreshold conduction in junctionless transistors

Solid-state electronics, 2016-10, Vol.124, p.58-63

2016

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Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

Journal of applied physics, 2013-10, Vol.114 (15)

2013

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Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Solid-state electronics, 2014-09, Vol.99, p.104-107

2014

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Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

Thin solid films, 2013-12, Vol.548, p.560-565

2013

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Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Semiconductor science and technology, 2014-04, Vol.29 (4), p.45024

2014

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Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs

Solid-state electronics, 2015-01, Vol.103, p.229-235

2015

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Impact of channel width on back biasing effect in tri-gate MOSFET

Microelectronic engineering, 2014-02, Vol.114, p.91-97

2014

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Mobility analysis of surface roughness scattering in FinFET devices

Solid-state electronics, 2011-08, Vol.62 (1), p.195-201

2011

Volltextzugriff (PDF)

Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

Applied physics letters, 2010-08, Vol.97 (7), p.073505-073505-3

2010

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Back biasing effects in tri-gate junctionless transistors

Solid-state electronics, 2013-09, Vol.87, p.74-79

2013

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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Applied physics letters, 2013-02, Vol.102 (5)

2013

Volltextzugriff (PDF)

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Low-temperature electrical characterization of junctionless transistors

Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Less mobility degradation induced by transverse electric-field in junctionless transistors

Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

A Simple Method for Estimation of Silicon Film Thickness in Tri-Gate Junctionless Transistors

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

Separation of surface accumulation and bulk neutral channel in junctionless transistors

Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Impact of series resistance on the operation of junctionless transistors

Series resistance in different operation regime of junctionless transistors

Behavior of subthreshold conduction in junctionless transistors

Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs

Impact of channel width on back biasing effect in tri-gate MOSFET

Mobility analysis of surface roughness scattering in FinFET devices

Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

Back biasing effects in tri-gate junctionless transistors

Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

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