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Back biasing effects in tri-gate junctionless transistors

Solid-state electronics, 2013-09, Vol.87, p.74-79

2013

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Behavior of subthreshold conduction in junctionless transistors

Solid-state electronics, 2016-10, Vol.124, p.58-63

2016

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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Applied physics letters, 2013-02, Vol.102 (5)

2013

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Current fluctuation of electron and hole carriers in multilayer WSe 2 field effect transistors

Applied physics letters, 2015-12, Vol.107 (24)

2015

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In depth characterization of electron transport in 14nm FD-SOI CMOS devices

Solid-state electronics, 2015-10, Vol.112, p.13-18

2015

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Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Journal of physical chemistry. C, 2014-11, Vol.118 (46), p.26454-26461

2014

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Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Solid-state electronics, 2013-03, Vol.81, p.58-62

2013

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Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Thin solid films, 2014-05, Vol.558, p.279-282

2014

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Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Journal of applied physics, 2014-12, Vol.116 (24)

2014

Volltextzugriff (PDF)

Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

IEEE transactions on electron devices, 2015-01, Vol.62 (1), p.3-8

2015

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Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Semiconductor science and technology, 2014-04, Vol.29 (4), p.45024

2014

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Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Solid-state electronics, 2014-09, Vol.99, p.104-107

2014

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Impact of channel width on back biasing effect in tri-gate MOSFET

Microelectronic engineering, 2014-02, Vol.114, p.91-97

2014

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Impact of series resistance on the operation of junctionless transistors

Solid-state electronics, 2017-03, Vol.129, p.103-107

2017

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Less mobility degradation induced by transverse electric-field in junctionless transistors

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Solid-state electronics, 2013-03, Vol.81, p.101-104

2013

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Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Nanoscale, 2014-01, Vol.6 (1), p.433-441

2014

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Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

Applied physics letters, 2010-08, Vol.97 (7), p.073505-073505-3

2010

Volltextzugriff (PDF)

Low-temperature characterization of hall and effective mobility in junctionless transistors

2014 11th International Workshop on Low Temperature Electronics (WOLTE), 2014, p.85-88

2014

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Low temperature characterization of mobility in 14nm FD-SOI CMOS devices under interface coupling conditions

Solid-state electronics, 2015-06, Vol.108, p.30-35

2015

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Low-temperature electrical characterization of junctionless transistors

Solid-state electronics, 2013-02, Vol.80, p.135-141

2013

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Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs

Solid-state electronics, 2015-01, Vol.103, p.229-235

2015

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New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

Solid-state electronics, 2013-11, Vol.89, p.139-141

2013

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Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Journal of applied physics, 2014-03, Vol.115 (11)

2014

Volltextzugriff (PDF)

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Back biasing effects in tri-gate junctionless transistors

Behavior of subthreshold conduction in junctionless transistors

Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Current fluctuation of electron and hole carriers in multilayer WSe 2 field effect transistors

In depth characterization of electron transport in 14nm FD-SOI CMOS devices

Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Impact of channel width on back biasing effect in tri-gate MOSFET

Impact of series resistance on the operation of junctionless transistors

Less mobility degradation induced by transverse electric-field in junctionless transistors

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

Low-temperature characterization of hall and effective mobility in junctionless transistors

Low temperature characterization of mobility in 14nm FD-SOI CMOS devices under interface coupling conditions

Low-temperature electrical characterization of junctionless transistors

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs

New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

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