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Hidden surface channel in two-dimensional multilayers

2d materials, 2022-07, Vol.9 (3), p.35004

2022

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Restricted Channel Migration in 2D Multilayer ReS 2

ACS applied materials & interfaces, 2021-04, Vol.13 (16), p.19016-19022

2021

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A Simple Method for Estimation of Silicon Film Thickness in Tri-Gate Junctionless Transistors

IEEE electron device letters, 2018-09, Vol.39 (9), p.1282-1285

2018

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Series resistance in different operation regime of junctionless transistors

Solid-state electronics, 2018-03, Vol.141, p.92-95

2018

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Impact of series resistance on the operation of junctionless transistors

Solid-state electronics, 2017-03, Vol.129, p.103-107

2017

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Behavior of subthreshold conduction in junctionless transistors

Solid-state electronics, 2016-10, Vol.124, p.58-63

2016

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Current fluctuation of electron and hole carriers in multilayer WSe 2 field effect transistors

Applied physics letters, 2015-12, Vol.107 (24)

2015

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In depth characterization of electron transport in 14nm FD-SOI CMOS devices

Solid-state electronics, 2015-10, Vol.112, p.13-18

2015

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Low temperature characterization of mobility in 14nm FD-SOI CMOS devices under interface coupling conditions

Solid-state electronics, 2015-06, Vol.108, p.30-35

2015

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Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

IEEE transactions on electron devices, 2015-01, Vol.62 (1), p.3-8

2015

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Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs

Solid-state electronics, 2015-01, Vol.103, p.229-235

2015

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Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Applied physics letters, 2014-12, Vol.105 (26)

2014

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Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Journal of applied physics, 2014-12, Vol.116 (24)

2014

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Less mobility degradation induced by transverse electric-field in junctionless transistors

Applied physics letters, 2014-11, Vol.105 (21)

2014

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Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Journal of physical chemistry. C, 2014-11, Vol.118 (46), p.26454-26461

2014

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Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Solid-state electronics, 2014-09, Vol.99, p.104-107

2014

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Low-temperature characterization of hall and effective mobility in junctionless transistors

2014 11th International Workshop on Low Temperature Electronics (WOLTE), 2014, p.85-88

2014

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Separation of surface accumulation and bulk neutral channel in junctionless transistors

Applied physics letters, 2014-06, Vol.104 (26)

2014

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Separation of interlayer resistance in multilayer MoS 2 field-effect transistors

Applied physics letters, 2014-06, Vol.104 (23)

2014

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Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Thin solid films, 2014-05, Vol.558, p.279-282

2014

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Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Semiconductor science and technology, 2014-04, Vol.29 (4), p.45024

2014

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Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Impact of channel width on back biasing effect in tri-gate MOSFET

Microelectronic engineering, 2014-02, Vol.114, p.91-97

2014

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Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Nanoscale, 2014-01, Vol.6 (1), p.433-441

2014

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Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

Thin solid films, 2013-12, Vol.548, p.560-565

2013

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Hidden surface channel in two-dimensional multilayers

Restricted Channel Migration in 2D Multilayer ReS 2

A Simple Method for Estimation of Silicon Film Thickness in Tri-Gate Junctionless Transistors

Series resistance in different operation regime of junctionless transistors

Impact of series resistance on the operation of junctionless transistors

Behavior of subthreshold conduction in junctionless transistors

Current fluctuation of electron and hole carriers in multilayer WSe 2 field effect transistors

In depth characterization of electron transport in 14nm FD-SOI CMOS devices

Low temperature characterization of mobility in 14nm FD-SOI CMOS devices under interface coupling conditions

Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Less mobility degradation induced by transverse electric-field in junctionless transistors

Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Low-temperature characterization of hall and effective mobility in junctionless transistors

Separation of surface accumulation and bulk neutral channel in junctionless transistors

Separation of interlayer resistance in multilayer MoS 2 field-effect transistors

Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Impact of channel width on back biasing effect in tri-gate MOSFET

Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation

Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

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