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High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Nanoscale, 2015-05, Vol.7 (17), p.7896-7905

2015

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The restricted random dislocation distribution model to describe ensembles of dislocations with a screw component in ZnO layers with a mosaic structure

Journal of applied physics, 2022-08, Vol.132 (5)

2022

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High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates

CrystEngComm, 2020-01, Vol.22 (38), p.6268-6274

2020

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Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Journal of applied physics, 2015-10, Vol.118 (15)

2015

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Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles

Nano letters, 2020-12, Vol.20 (12), p.8689-8695

2020

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Probing the structural evolution and its impact on magnetic properties of FeCoNi(AlMn)x high-entropy alloy at the nanoscale

Journal of alloys and compounds, 2022-07, Vol.910, p.164724, Article 164724

2022

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The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers

Scientific reports, 2020-10, Vol.10 (1), p.17371-17371, Article 17371

2020

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Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties

Journal of crystal growth, 2016-03, Vol.437, p.20-25

2016

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Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures

Applied physics letters, 2016-02, Vol.108 (5)

2016

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Effect of colossal magnetoresistance material La0.67Ca0.33MnO3 on superconducting properties of YBa2Cu3O7-δ thin films

Journal of magnetism and magnetic materials, 2019-10, Vol.487, p.165335, Article 165335

2019

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Compositional and strain analysis of In(Ga)N/GaN short period superlattices

Journal of applied physics, 2018-01, Vol.123 (2)

2018

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Bandgap bowing in crystalline (ZnO)1−x(GaN)x thin films; influence of composition and structural properties

Semiconductor science and technology, 2019-01, Vol.34 (1), p.15001

2019

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Evolution of stratification in high-alloy content InGaN epilayers grown on (0001) AlN

Materials science and technology, 2018-09, Vol.34 (13), p.1565-1574

2018

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Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1155-1162

2015

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Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles

Semiconductor science and technology, 2014-04, Vol.29 (4), p.45017

2014

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Evidence of defect band mechanism responsible for band gap evolution in ( ZnO ) 1 − x ( GaN ) x alloys

Physical review. B, 2019-10, Vol.100 (16), Article 165201

2019

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Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Applied surface science, 2014-07, Vol.306, p.89-93

2014

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Raman and photoluminescence mapping of InxGa1−xN ( x ∼ 0.4) at high pressure: Optical determination of composition and stress

Applied physics letters, 2014-09, Vol.105 (9)

2014

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High electron mobility single-crystalline ZnSnN 2 on ZnO (0001) substrates

CrystEngComm, 2020-10, Vol.22 (38), p.6268-6274

2020

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Process–Structure–Property Relationship in FeCoNiAlxMnx Complex Concentrated Alloys Processed by Additive Manufacturing

Journal of materials engineering and performance, 2021-09, Vol.30 (9), p.6961-6971

2021

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High electron mobility single-crystalline ZnSnN on ZnO (0001) substrates

CrystEngComm, 2020-10, Vol.22 (38), p.6268-6274

2020

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Evidence of defect band mechanism responsible for band gap evolution in (ZnO)(1-x)(GaN)(x) alloys

Physical review. B, 2019-10, Vol.100 (16)

2019

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High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxyElectronic supplementary information (ESI) available: crystal structure of MoSe2; large area STM images of 3 ML MoSe2/AlN; large area optical and SEM images of MoSe2 films on AlN; GPA lattice strain analysis map of 3 ML MoSe2 deposited on AlN; band diagram reconstruction of MoSe2/AlN and MoSe2/Bi2Se3/AlN; short-scale uniformity investigation of 1 ML MoSe2 on AlN(0001); stabil

2015-04

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High-quality, large-area MoSe 2 and MoSe 2 /Bi 2 Se 3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Nanoscale, 2015, Vol.7 (17), p.7896-7905

2015

Volltextzugriff (PDF)

High-quality, large-area MoSe sub(2) and MoSe sub(2)/Bi sub(2)Se sub(3) heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Nanoscale, 2015-04, Vol.7 (17), p.7896-7905

2015

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High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

The restricted random dislocation distribution model to describe ensembles of dislocations with a screw component in ZnO layers with a mosaic structure

High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates

Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles

Probing the structural evolution and its impact on magnetic properties of FeCoNi(AlMn)x high-entropy alloy at the nanoscale

The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers

Molecular beam epitaxy of thick InGaN(0001) films: Effects of substrate temperature on structural and electronic properties

Stacking fault domains as sources of a-type threading dislocations in III-nitride heterostructures

Effect of colossal magnetoresistance material La0.67Ca0.33MnO3 on superconducting properties of YBa2Cu3O7-δ thin films

Compositional and strain analysis of In(Ga)N/GaN short period superlattices

Bandgap bowing in crystalline (ZnO)1−x(GaN)x thin films; influence of composition and structural properties

Evolution of stratification in high-alloy content InGaN epilayers grown on (0001) AlN

Structure and strain variation in InGaN interlayers grown by PAMBE at low substrate temperatures

Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles

Evidence of defect band mechanism responsible for band gap evolution in ( ZnO ) 1 − x ( GaN ) x alloys

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Raman and photoluminescence mapping of InxGa1−xN ( x ∼ 0.4) at high pressure: Optical determination of composition and stress

High electron mobility single-crystalline ZnSnN 2 on ZnO (0001) substrates

Process–Structure–Property Relationship in FeCoNiAlxMnx Complex Concentrated Alloys Processed by Additive Manufacturing

High electron mobility single-crystalline ZnSnN on ZnO (0001) substrates

Evidence of defect band mechanism responsible for band gap evolution in (ZnO)(1-x)(GaN)(x) alloys

High-quality, large-area MoSe 2 and MoSe 2 /Bi 2 Se 3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

High-quality, large-area MoSe sub(2) and MoSe sub(2)/Bi sub(2)Se sub(3) heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

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