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Depolarizing 'beat' Resonances in the Brookhaven AGS

IEEE transactions on nuclear science, 1985-10, Vol.32 (5), p.2635-2637

1985

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Commissioning the Polarized Beam in the AGS

IEEE transactions on nuclear science, 1985-10, Vol.32 (5), p.1656-1658

1985

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Polarimeters for the AGS Polarized Proton Beam

IEEE transactions on nuclear science, 1983-08, Vol.30 (4), p.2176-2178

1983

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The Possibility of Acceleration of Polarized Protons in the Brookhaven AGS

IEEE transactions on nuclear science, 1979-01, Vol.26 (3), p.3203-3205

1979

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Acceleration of Polarized Protons in the Brookhaven AGS

IEEE transactions on nuclear science, 1981-01, Vol.28 (3), p.2031-2033

1981

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Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

IEEE electron device letters, 2011-03, Vol.32 (3), p.255-257

2011

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Precursor ion damage and angular dependence of single event gate rupture in thin oxides

IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2509-2518

1998

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Gate capacitance attenuation in MOS devices with thin gate dielectrics

IEEE electron device letters, 1996-11, Vol.17 (11), p.521-524

1996

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Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration

IEEE electron device letters, 1992-04, Vol.13 (4), p.217-219

1992

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Adhesion Assessment of Copper Thin Films

MRS proceedings, 1997, Vol.473, Article 39

1997

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Simulation of the Effect of Dielectric Air Gaps on Interconnect Reliability

MRS proceedings, 1997, Vol.473, Article 323

1997

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The Microstructure and Electromigration Performance of Damascene-Fabricated Aluminum Interconnects

MRS proceedings, 1997, Vol.473, Article 217

1997

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Ultra-thin gate dielectrics: they break down, but do they fail?

International Electron Devices Meeting. IEDM Technical Digest, 1997, p.73-76

1997

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Soft Breakdown in Ultra-Thin Oxides

MRS proceedings, 1999, Vol.567, Article 301

1999

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The Energy Release Rate for Decohesion in Thin Multilayered Films on Substrates

MRS proceedings, 1997, Vol.473, Article 15

1997

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Modeling Stress Evolution in Electromigration

MRS proceedings, 1997, Vol.473, Article 305

Thouless, M. D.

1997

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Impact of Metal Contamination of 7.0nm Gate Oxides on Various Substrate Materials

MRS proceedings, 1997, Vol.473, Article 141

1997

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Micromechanics Measurements Applied to Integrated Circuit Microelectronics

MRS proceedings, 1997, Vol.473, Article 27

Clarke, David R.

1997

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In-Situ Tem-Investigation of Stress- and Electromigration- Induced Void Formation and Growth in Passivated Al-Interconnects

MRS proceedings, 1997, Vol.473, Article 381

1997

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An Examination of Mass Transport Paths in Conventional and Highly Textured Al-Cu Interconnect Lines

MRS proceedings, 1997, Vol.473, Article 223

1997

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Interconnect Limits on Gigascale Integration (GSI)

MRS proceedings, 1997, Vol.473, Article 293

1997

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Relationship Between Structure and Electromigration Characteristics of Pure Aluminum Films

MRS proceedings, 1997, Vol.473, Article 369

1997

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Behaviors of Precipitates, Voids, and Hillocks in Electromigration Stressed Al-2wt%Cu Interconnects

MRS proceedings, 1997, Vol.473, Article 357

1997

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Synthesis of Ultra-thin stacked oxides using low pressure single furnace cluster process

MRS proceedings, 1997, Vol.473, Article 89

1997

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Scanning Stiffness Microscopy - A Novel Technique for Detecting Sub-Surface Cracks

MRS proceedings, 1997, Vol.473, Article 285

1997

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Depolarizing 'beat' Resonances in the Brookhaven AGS

Commissioning the Polarized Beam in the AGS

Polarimeters for the AGS Polarized Proton Beam

The Possibility of Acceleration of Polarized Protons in the Brookhaven AGS

Acceleration of Polarized Protons in the Brookhaven AGS

Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETs

Precursor ion damage and angular dependence of single event gate rupture in thin oxides

Gate capacitance attenuation in MOS devices with thin gate dielectrics

Low-temperature furnace-grown reoxidized nitrided oxide gate dielectrics as a barrier to boron penetration

Adhesion Assessment of Copper Thin Films

Simulation of the Effect of Dielectric Air Gaps on Interconnect Reliability

The Microstructure and Electromigration Performance of Damascene-Fabricated Aluminum Interconnects

Ultra-thin gate dielectrics: they break down, but do they fail?

Soft Breakdown in Ultra-Thin Oxides

The Energy Release Rate for Decohesion in Thin Multilayered Films on Substrates

Modeling Stress Evolution in Electromigration

Impact of Metal Contamination of 7.0nm Gate Oxides on Various Substrate Materials

Micromechanics Measurements Applied to Integrated Circuit Microelectronics

In-Situ Tem-Investigation of Stress- and Electromigration- Induced Void Formation and Growth in Passivated Al-Interconnects

An Examination of Mass Transport Paths in Conventional and Highly Textured Al-Cu Interconnect Lines

Interconnect Limits on Gigascale Integration (GSI)

Relationship Between Structure and Electromigration Characteristics of Pure Aluminum Films

Behaviors of Precipitates, Voids, and Hillocks in Electromigration Stressed Al-2wt%Cu Interconnects

Synthesis of Ultra-thin stacked oxides using low pressure single furnace cluster process

Scanning Stiffness Microscopy - A Novel Technique for Detecting Sub-Surface Cracks

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