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Thermophotovoltaic efficiency of 40

Nature (London), 2022-04, Vol.604 (7905), p.287-291

2022

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High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells

Applied physics letters, 2018-01, Vol.112 (5)

2018

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Effect of crystal phase composition on the reductive and oxidative abilities of TiO2 nanotubes under UV and visible light

Applied catalysis. B, Environmental, 2010-06, Vol.97 (3-4), p.354-360

2010

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III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

Crystals (Basel), 2019-01, Vol.9 (1), p.3

2019

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Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Nature communications, 2019-09, Vol.10 (1), p.4070-1, Article 4070

2019

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Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Nature communications, 2019-07, Vol.10 (1), p.3361-8, Article 3361

2019

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Guided Optimization of Phase-Unstable III-V Compositionally Graded Buffers by Cathodoluminescence Spectrum Imaging

IEEE journal of photovoltaics, 2020-01, Vol.10 (1), p.109-116

2020

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Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

IEEE journal of photovoltaics, 2017-01, Vol.7 (1), p.347-353

2017

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GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers

IEEE journal of photovoltaics, 2016-01, Vol.6 (1), p.191-195

2016

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Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy

ACS omega, 2023-11, Vol.8 (47), p.45088-45095

2023

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Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

Nature energy, 2020-04, Vol.5 (4), p.326-335

2020

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Pathway to 50% efficient inverted metamorphic concentrator solar cells

AIP Conference Proceedings, 2017, Vol.1881 (1)

2017

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Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs

Journal of crystal growth, 2012-08, Vol.352 (1), p.253-257

2012

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High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

Applied physics letters, 2018-01, Vol.112 (4)

2018

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GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas

Applied physics letters, 2020-05, Vol.116 (18)

2020

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Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

IEEE journal of photovoltaics, 2018-03, Vol.8 (2), p.626-632

2018

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AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Progress in photovoltaics, 2023-03, Vol.31 (3), p.230-236

2023

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Light-trapping structures fabricated in situ for ultrathin III-V solar cells

Journal of applied physics, 2023-10, Vol.134 (13)

2023

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Publisher’s Note: “Light-trapping structures fabricated in situ for ultrathin III-V solar cells” [J. Appl. Phys. 134, 135307 (2023)]

Journal of applied physics, 2023-10, Vol.134 (16)

2023

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Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

Crystal growth & design, 2021-07, Vol.21 (7), p.3916-3921

2021

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Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application

Journal of applied physics, 2020-10, Vol.128 (14)

2020

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Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

Applied physics letters, 2021-08, Vol.119 (9)

2021

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Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Journal of applied physics, 2021-09, Vol.130 (11)

2021

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Controlled exfoliation of (100) GaAs-based devices by spalling fracture

Applied physics letters, 2016-01, Vol.108 (1)

2016

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Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

Advanced energy materials, 2024-03, Vol.14 (10), p.n/a

2024

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Thermophotovoltaic efficiency of 40

High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells

Effect of crystal phase composition on the reductive and oxidative abilities of TiO2 nanotubes under UV and visible light

III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy

Publisher Correction: Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy

Guided Optimization of Phase-Unstable III-V Compositionally Graded Buffers by Cathodoluminescence Spectrum Imaging

Highly Transparent Compositionally Graded Buffers for New Metamorphic Multijunction Solar Cell Designs

GaAs Solar Cells Grown by Hydride Vapor-Phase Epitaxy and the Development of GaInP Cladding Layers

Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy

Six-junction III–V solar cells with 47.1% conversion efficiency under 143 Suns concentration

Pathway to 50% efficient inverted metamorphic concentrator solar cells

Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs

High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

GaAs growth rates of 528 μm/h using dynamic-hydride vapor phase epitaxy with a nitrogen carrier gas

Building a Six-Junction Inverted Metamorphic Concentrator Solar Cell

AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy

Light-trapping structures fabricated in situ for ultrathin III-V solar cells

Publisher’s Note: “Light-trapping structures fabricated in situ for ultrathin III-V solar cells” [J. Appl. Phys. 134, 135307 (2023)]

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application

Inverted metamorphic GaInAs solar cell grown by dynamic hydride vapor phase epitaxy

Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations

Controlled exfoliation of (100) GaAs-based devices by spalling fracture

Sub‐0.6 eV Inverted Metamorphic GaInAs Cells Grown on Inp and GaAs Substrates for Thermophotovoltaics and Laser Power Conversion

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