UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition

Applied physics express, 2019-10, Vol.12 (10), p.106502

2019

Volltextzugriff (PDF)

Achieving a high breakdown voltage for GaAsSb-based backward diodes using the carrier depletion effect originating from nanowires

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGH03

2020

Volltextzugriff (PDF)

Size Scaling-Rule for the Broadband Radiation Characteristics of Finite-Sized Self-Complementary Bow-Tie Antennas Integrated with Semiconductor Mesas

IEICE transactions on electronics, 2017-06, Vol.E100.C (6), p.632-642

2017

Volltextzugriff (PDF)

Analysis of Modulated Terahertz Wave Radiation Characteristics in a Monolithic Integrated Structure Consisting of a Resonant Tunneling Diodes, a Photodiodes and a Self-Complementary Bow-Tie Antenna

IEICE transactions on electronics, 2019-06, Vol.E102.C (6), p.466-470

2019

Volltextzugriff (PDF)

Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias

AIP advances, 2020-08, Vol.10 (8), p.085218-085218-5

2020

Volltextzugriff (PDF)

Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes

IEICE transactions on electronics, 2022-10, Vol.E105.C (10), p.622-626, Article 2021FUS0006

2022

Volltextzugriff (PDF)

Erratum: Size Scaling-Rule for the Broadband Radiation Characteristics of Finite-Sized Self-Complementary Bow-Tie Antennas Integrated with Semiconductor Mesas [IEICE Transactions on Electronics Vol. E100.C (2017) No. 6 pp. 632-642]

IEICE transactions on electronics, 2017-01, Vol.E100.C (7), p.669-669_e1

2017

Volltextzugriff (PDF)

Equivalent Circuit Modeling of a Semiconductor-Integrated Bow-Tie Antenna for the Physical Interpretation of the Radiation Characteristics in the Terahertz Region

IEICE transactions on electronics, 2016, Vol.E99.C (12), p.1312-1322

2016

Volltextzugriff (PDF)

Analysis of Relaxation Oscillation in a Resonant Tunneling Diode Integrated with a Bow-Tie Antenna

IEICE transactions on electronics, 2017-05, Vol.E100.C (5), p.430-438

2017

Volltextzugriff (PDF)

FOREWORD

IEICE transactions on electronics, 2020-06, Vol.E103.C (6), p.279-279

SUHARA, Michihiko

2020

Volltextzugriff (PDF)

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz

IEICE transactions on electronics, 2019-06, Vol.E102.C (6), p.462-465

2019

Volltextzugriff (PDF)

Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submilimeter-waves

Physica status solidi. C, 2012-02, Vol.9 (2), p.377-380

2012

Volltextzugriff (PDF)

Proposal of Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Utilizing Relaxation Oscillations and Its Application to Short-Distance Wireless Communications

Journal of infrared, millimeter and terahertz waves, 2018-11, Vol.39 (11), p.1087-1111

2018

Volltextzugriff (PDF)

Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

IEICE transactions on electronics, 2012, Vol.E95.C (5), p.871-878

2012

Volltextzugriff (PDF)

Demultiplexing Property Owing to a Composite Right/Left-Handed Transmission Line with Leaky Wave Radiation toward Functional Wireless Interconnects

IEICE transactions on electronics, 2010, Vol.E93-C (5), p.619-624

2010

Volltextzugriff (PDF)

Time-Domain Analysis of Large-Signal-Based Nonlinear Models for a Resonant Tunneling Diode with an Integrated Antenna

IEICE transactions on electronics, 2012, Vol.E95.C (8), p.1376-1384

2012

Volltextzugriff (PDF)

Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes

IEICE transactions on electronics, 2011-01, Vol.E94-C (5), p.820-825

2011

Volltextzugriff (PDF)

III–V nanowire backward diodes with high sensitivity above 1 MV W−1 for low-power microwave energy harvesting

Japanese Journal of Applied Physics, 2021-05, Vol.60 (SB), p.SBBH14

2021

Volltextzugriff (PDF)

Implementation of Physics-Based Model for Current-Voltage Characteristics in Resonant Tunneling Diodes by Using the Voigt Function

IEICE transactions on electronics, 2010, Vol.E93-C (8), p.1295-1301

2010

Volltextzugriff (PDF)

Broadband Equivalent Circuit Modeling of Self-Complementary Bow-Tie Antennas Monolithically Integrated with Semiconductors for Terahertz Applications

IEICE transactions on electronics, 2009, Vol.E92-C (2), p.269-274

2009

Volltextzugriff (PDF)

Characterization and modeling of zero bias rf-detection diodes based on triple barrier resonant tunneling structures

2013 International Conference on Indium Phosphide and Related Materials (IPRM), 2013, p.1-2

2013

Volltextzugriff (PDF)

Photo-enhanced reactivation of Si donors deactivated by plasma-induced defects in n-type GaN

Physica status solidi. C, 2007-06, Vol.4 (7), p.2581-2584

2007

Volltextzugriff (PDF)

Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors

IEICE transactions on electronics, 2008, Vol.E91-C (7), p.1070-1075

2008

Volltextzugriff (PDF)

Analysis of Phase Mode Variation Due to Bias Voltage in Arrayed Oscillators Using Resonant Tunneling Diodes Integrated with Bow-Tie Antennas

2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama), 2018, p.2461-2466

2018

Volltextzugriff (PDF)

Characterization of Argon Fast Atom Beam Source and Application to Mesa Etching Process for GaInP/GaAs Triple-Barrier Resonant Tunneling Diodes

Japanese Journal of Applied Physics, 2006-06, Vol.45 (6S), p.5504

2006

Volltextzugriff (PDF)

1 – 25 von 70

Suche als RSS-Feed

Aktive Filter

ThemaHumans

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(51)
Mit Volltextzugriff
(50)

Publikationsform

Artikel
(51)
Tagungsberichte
(19)

Sprache

Englisch
(70)
Japanisch
(2)

Erscheinungsjahr

n.n

Thema

Science & Technology
(56)
Physical Sciences
(35)
Physics
(35)
Technology
(34)
Physics, Applied
(30)
Engineering
(26)
Engineering, Electrical & Electronic
(26)
Diodes
(14)
Electronics
(14)
Exact Sciences And Technology
(11)
Resonant Tunneling
(11)
Materials Science
(10)
Applied Sciences
(9)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(9)
Equivalent Circuits
(8)
Circuits
(7)
Materials Science, Multidisciplinary
(7)
Omvpe
(7)
Resonant Tunneling Diode
(7)
Condensed Matter Physics
(6)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition

Achieving a high breakdown voltage for GaAsSb-based backward diodes using the carrier depletion effect originating from nanowires

Size Scaling-Rule for the Broadband Radiation Characteristics of Finite-Sized Self-Complementary Bow-Tie Antennas Integrated with Semiconductor Mesas

Analysis of Modulated Terahertz Wave Radiation Characteristics in a Monolithic Integrated Structure Consisting of a Resonant Tunneling Diodes, a Photodiodes and a Self-Complementary Bow-Tie Antenna

Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias

Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes

Erratum: Size Scaling-Rule for the Broadband Radiation Characteristics of Finite-Sized Self-Complementary Bow-Tie Antennas Integrated with Semiconductor Mesas [IEICE Transactions on Electronics Vol. E100.C (2017) No. 6 pp. 632-642]

Equivalent Circuit Modeling of a Semiconductor-Integrated Bow-Tie Antenna for the Physical Interpretation of the Radiation Characteristics in the Terahertz Region

Analysis of Relaxation Oscillation in a Resonant Tunneling Diode Integrated with a Bow-Tie Antenna

FOREWORD

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz

Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submilimeter-waves

Proposal of Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Utilizing Relaxation Oscillations and Its Application to Short-Distance Wireless Communications

Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

Demultiplexing Property Owing to a Composite Right/Left-Handed Transmission Line with Leaky Wave Radiation toward Functional Wireless Interconnects

Time-Domain Analysis of Large-Signal-Based Nonlinear Models for a Resonant Tunneling Diode with an Integrated Antenna

Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes

III–V nanowire backward diodes with high sensitivity above 1 MV W−1 for low-power microwave energy harvesting

Implementation of Physics-Based Model for Current-Voltage Characteristics in Resonant Tunneling Diodes by Using the Voigt Function

Broadband Equivalent Circuit Modeling of Self-Complementary Bow-Tie Antennas Monolithically Integrated with Semiconductors for Terahertz Applications

Characterization and modeling of zero bias rf-detection diodes based on triple barrier resonant tunneling structures

Photo-enhanced reactivation of Si donors deactivated by plasma-induced defects in n-type GaN

Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors

Analysis of Phase Mode Variation Due to Bias Voltage in Arrayed Oscillators Using Resonant Tunneling Diodes Integrated with Bow-Tie Antennas

Characterization of Argon Fast Atom Beam Source and Application to Mesa Etching Process for GaInP/GaAs Triple-Barrier Resonant Tunneling Diodes

Aktive Filter

Suchergebnisse filtern