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Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm

Optics express, 2008-04, Vol.16 (8), p.5290-5298

2008

Volltextzugriff (PDF)

Fourier modal method for inverse design of metasurface-enhanced micro-LEDs

Optics express, 2023-12, Vol.31 (26), p.42945-42960

2023

Volltextzugriff (PDF)

Origin of efficiency droop in GaN-based light-emitting diodes

Applied physics letters, 2007-10, Vol.91 (18), p.183507-183507-3

2007

Volltextzugriff (PDF)

Data-driven acceleration of photonic simulations

Scientific reports, 2019-12, Vol.9 (1), p.19728-19728, Article 19728

2019

Volltextzugriff (PDF)

Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection

Nature photonics, 2007-03, Vol.1 (3), p.176-179

2007

Volltextzugriff (PDF)

Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges

Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (3), Article 035303

Schubert, Martin F.

2010

Volltextzugriff (PDF)

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Applied physics letters, 2019-06, Vol.114 (25)

2019

Volltextzugriff (PDF)

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

Applied physics letters, 2007-12, Vol.91 (23)

2007

Volltextzugriff (PDF)

Improved color rendering and luminous efficacy in phosphor-converted white light-emitting diodes by use of dual-blue emitting active regions

Optics express, 2009-06, Vol.17 (13), p.10806-10813

2009

Volltextzugriff (PDF)

High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes

Journal of applied physics, 2008-04, Vol.103 (8)

2008

Volltextzugriff (PDF)

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Applied physics letters, 2009-01, Vol.94 (1), p.011113-011113-3

2009

Volltextzugriff (PDF)

Publisher Correction: Data-driven acceleration of photonic simulations

Scientific reports, 2020-02, Vol.10 (1), p.3330-3330, Article 3330

2020

Volltextzugriff (PDF)

Polarization-charge tunnel junctions for ultraviolet light-emitters without p -type contact

Applied physics letters, 2010-01, Vol.96 (3), p.031102-031102-3

Schubert, Martin F.

2010

Volltextzugriff (PDF)

Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells

Applied physics letters, 2010-03, Vol.96 (13)

2010

Volltextzugriff (PDF)

Distributed Bragg reflector consisting of high- and low-refractive-index thin film layers made of the same material

Applied physics letters, 2007-04, Vol.90 (14)

2007

Volltextzugriff (PDF)

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

Applied physics letters, 2009-02, Vol.94 (8)

2009

Volltextzugriff (PDF)

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Applied physics letters, 2010-03, Vol.96 (12), p.121110-121110-3

2010

Volltextzugriff (PDF)

Effects of polarization-field tuning in GaInN light-emitting diodes

Applied physics letters, 2011-07, Vol.99 (4), p.041105-041105-3

2011

Volltextzugriff (PDF)

Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

Applied physics letters, 2009-11, Vol.95 (19), p.191105-191105-3

2009

Volltextzugriff (PDF)

Demonstration of optical interference filters utilizing tunable refractive index layers

Optics express, 2010-11, Vol.18 Suppl 4 (S4), p.A594-A599

2010

Volltextzugriff (PDF)

Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics

Applied physics letters, 2008-12, Vol.93 (25), p.251108-251108-3

2008

Volltextzugriff (PDF)

Tapered Cavities for High-Modulation-Efficiency and Low-Distortion Semiconductor Lasers

IEEE journal of quantum electronics, 2007-11, Vol.43 (11), p.1083-1087

2007

Volltextzugriff (PDF)

SiGeC/Si Electrooptic Modulators

Journal of lightwave technology, 2007-03, Vol.25 (3), p.866-874

2007

Volltextzugriff (PDF)

Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact

Advanced materials (Weinheim), 2008-02, Vol.20 (4), p.801-804

2008

Volltextzugriff (PDF)

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

Applied physics letters, 2008-07, Vol.93 (4)

2008

Volltextzugriff (PDF)

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Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm

Fourier modal method for inverse design of metasurface-enhanced micro-LEDs

Origin of efficiency droop in GaN-based light-emitting diodes

Data-driven acceleration of photonic simulations

Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection

Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

Improved color rendering and luminous efficacy in phosphor-converted white light-emitting diodes by use of dual-blue emitting active regions

High-refractive-index TiO2-nanoparticle-loaded encapsulants for light-emitting diodes

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Publisher Correction: Data-driven acceleration of photonic simulations

Polarization-charge tunnel junctions for ultraviolet light-emitters without p -type contact

Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells

Distributed Bragg reflector consisting of high- and low-refractive-index thin film layers made of the same material

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Effects of polarization-field tuning in GaInN light-emitting diodes

Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes

Demonstration of optical interference filters utilizing tunable refractive index layers

Nanostructured multilayer graded-index antireflection coating for Si solar cells with broadband and omnidirectional characteristics

Tapered Cavities for High-Modulation-Efficiency and Low-Distortion Semiconductor Lasers

SiGeC/Si Electrooptic Modulators

Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact

Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

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