UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Improvement of crystallinity by post-annealing and regrowth of Ge layers on Si substrates

Thin solid films, 2014-01, Vol.550, p.509-514

2014

Volltextzugriff (PDF)

Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

Japanese Journal of Applied Physics, 2017-03, Vol.56 (3), p.32102-032102

2017

Volltextzugriff (PDF)

Silicon light-emitting transistor for on-chip optical interconnection

Applied physics letters, 2006-10, Vol.89 (16), p.163504-163504-3

2006

Volltextzugriff (PDF)

Light Detection and Emission in Germanium-on-Insulator Diodes

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.04DG09-04DG09-4

2012

Volltextzugriff (PDF)

Electro-Luminescence from Ultra-Thin Silicon

Japanese Journal of Applied Physics, 2006-07, Vol.45 (7L), p.L679

2006

Volltextzugriff (PDF)

Improved theory for remote-charge-scattering-limited mobility in metal–oxide–semiconductor transistors

Applied physics letters, 2002-09, Vol.81 (13), p.2391-2393

2002

Volltextzugriff (PDF)

Three-Dimensional Numerical Analysis of Switching Properties of High-Speed and Nonvolatile Nanoelectromechanical Memory

IEEE transactions on electron devices, 2007-05, Vol.54 (5), p.1132-1139

2007

Volltextzugriff (PDF)

Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir–Blodgett Technique

Japanese Journal of Applied Physics, 2008-05, Vol.47 (5R), p.3731

2008

Volltextzugriff (PDF)

Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.04DG10-04DG10-5

2012

Volltextzugriff (PDF)

Synthesis, Monolayer Formation, and Control of Electrical Characteristics of 3-nm-Diameter Gold Nanoparticles

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7S), p.5667

2005

Volltextzugriff (PDF)

Analytical quantum mechanical model for accumulation capacitance of MOS structures

IEEE electron device letters, 2002-06, Vol.23 (6), p.348-350

2002

Volltextzugriff (PDF)

(Invited) Ge Optical Emitters Fabricated by Ge Condensation and Epitaxial Growth

ECS transactions, 2013, Vol.50 (9), p.277-286

2013

Volltextzugriff (PDF)

Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics

Japanese Journal of Applied Physics, 2003-12, Vol.42 (Part 2, No. 12A), p.L1425-L1428

2003

Volltextzugriff (PDF)

Light Detection and Emission in Germanium-on-Insulator Diodes

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4S), p.4

2012

Volltextzugriff (PDF)

Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots

Japanese Journal of Applied Physics, 2010-01, Vol.49 (1), p.014001-014001-4

2010

Volltextzugriff (PDF)

Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics

Applied physics letters, 2004-02, Vol.84 (8), p.1395-1397

2004

Volltextzugriff (PDF)

Is Evolution from Weak to Strong Coupling Superconductivity Always Continuous?

Journal of the Physical Society of Japan, 2001-05, Vol.70 (5), p.1186-1189

2001

Volltextzugriff (PDF)

First-principles study of light emission from germanium quantum-well

22nd IEEE International Semiconductor Laser Conference, 2010, p.131-132

2010

Volltextzugriff (PDF)

Built-in interface in high- κ gate stacks

Applied surface science, 2003-06, Vol.216 (1), p.208-214

2003

Volltextzugriff (PDF)

Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics

Microelectronic engineering, 2003-05, Vol.65 (4), p.447-453

2003

Volltextzugriff (PDF)

Deflection of light at the boundaries between ferroelectric and antiferroelectric states in chiral smectic liquid crystals

Japanese Journal of Applied Physics, 1996-09, Vol.35 (9B), p.5054-5057

1996

Volltextzugriff (PDF)

Gutzwiller-Type Projected BCS Ground States for Attractive Hubbard Model in Infinite Dimensions

Progress of theoretical physics, 1999-11, Vol.102 (5), p.953-963

1999

Volltextzugriff (PDF)

Acid-catalyzed reactions of 1,2-Dicarbonylethanes with benzene. Ethylene dication electrophiles

Tetrahedron letters, 1995-08, Vol.36 (32), p.5749-5752

1995

Volltextzugriff (PDF)

Accurate evaluation of mobility in high gate-leakage-current MOSFETs by using a transmission-line model

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1653-1658

2004

Volltextzugriff (PDF)

Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors

Thin solid films, 2014-04, Vol.557, p.355-362

2014

Volltextzugriff (PDF)

1 – 25 von 1.108

Suche als RSS-Feed

Aktive Filter

ThemaHumans

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(832)
Mit Volltextzugriff
(947)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(577)
Life Sciences & Biomedicine
(271)
Physical Sciences
(249)
Technology
(144)
Physics
(142)
Animals
(138)
Exact Sciences And Technology
(110)
Physics, Applied
(97)
Chemistry
(94)
Engineering
(74)
Biological And Medical Sciences
(67)
Rats
(64)
Biochemistry & Molecular Biology
(62)
Materials Science
(62)
Male
(56)
Mice
(53)
Engineering, Electrical & Electronic
(52)
Materials Science, Multidisciplinary
(44)
Fundamental And Applied Biological Sciences. Psychology
(40)
Physics, Condensed Matter
(36)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Improvement of crystallinity by post-annealing and regrowth of Ge layers on Si substrates

Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

Silicon light-emitting transistor for on-chip optical interconnection

Light Detection and Emission in Germanium-on-Insulator Diodes

Electro-Luminescence from Ultra-Thin Silicon

Improved theory for remote-charge-scattering-limited mobility in metal–oxide–semiconductor transistors

Three-Dimensional Numerical Analysis of Switching Properties of High-Speed and Nonvolatile Nanoelectromechanical Memory

Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir–Blodgett Technique

Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation

Synthesis, Monolayer Formation, and Control of Electrical Characteristics of 3-nm-Diameter Gold Nanoparticles

Analytical quantum mechanical model for accumulation capacitance of MOS structures

(Invited) Ge Optical Emitters Fabricated by Ge Condensation and Epitaxial Growth

Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics

Light Detection and Emission in Germanium-on-Insulator Diodes

Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots

Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics

Is Evolution from Weak to Strong Coupling Superconductivity Always Continuous?

First-principles study of light emission from germanium quantum-well

Built-in interface in high- κ gate stacks

Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al2O3 gate dielectrics

Deflection of light at the boundaries between ferroelectric and antiferroelectric states in chiral smectic liquid crystals

Gutzwiller-Type Projected BCS Ground States for Attractive Hubbard Model in Infinite Dimensions

Acid-catalyzed reactions of 1,2-Dicarbonylethanes with benzene. Ethylene dication electrophiles

Accurate evaluation of mobility in high gate-leakage-current MOSFETs by using a transmission-line model

Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors

Aktive Filter

Suchergebnisse filtern