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Hall effect measurements on InAs nanowires

Applied physics letters, 2012-10, Vol.101 (15)

2012

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Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement

Applied physics letters, 2021-01, Vol.118 (4)

2021

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Integrated high pressure microhydraulic actuation and control for surgical instruments

Biomedical microdevices, 2012-08, Vol.14 (4), p.699-708

2012

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n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

IEEE electron device letters, 2010-10, Vol.31 (10), p.1083-1085

2010

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Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

Thin solid films, 2012-05, Vol.520 (15), p.5080-5085

2012

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Optimized marker definition for high overlay accuracy e-beam lithography

Microelectronic engineering, 2012-09, Vol.97, p.68-71

2012

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Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface

Applied physics. A, Materials science & processing, 2007-06, Vol.87 (3), p.531-537

Moers, J.

2007

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Etching titanium nitride gate stacked on high-κ dielectric

Microelectronic engineering, 2011-08, Vol.88 (8), p.2541-2543

2011

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Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET

Thin solid films, 2010-02, Vol.518 (9), p.2565-2568

2010

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Integration of MOSFETs with SiGe dots as stressor material

Solid-state electronics, 2011-06, Vol.60 (1), p.75-83

2011

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Growth of Ge dots on templated Si substrates with diffusion-altered holes

Europhysics letters, 2009-03, Vol.85 (5), p.58002-58002(4)

2009

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Gate-controlled quantum collimation in nanocolumn resonant tunnelling transistors

Nanotechnology, 2009-11, Vol.20 (46), p.465402-465402

2009

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Fabrication and control of miniature McKibben actuators

Sensors and actuators. A. Physical., 2011-03, Vol.166 (1), p.111-116

2011

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Turning the world vertical : MOSFETs with current flow perpendicular to the wafer surface: From surface science to nanoscale devices

Applied physics. A, Materials science & processing, 2007, Vol.87 (3), p.531-537

MOERS, J

2007

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Patterning of 25-nm-wide silicon webs with an aspect ratio of 13

Microelectronic engineering, 2003-06, Vol.67, p.376-380

2003

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Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

Journal of physics. Conference series, 2010-09, Vol.245 (1), p.012034

2010

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Fabrication of silicon webs in the decananometre range

Applied physics. A, Materials science & processing, 2004-03, Vol.78 (5), p.627-628

2004

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Advanced CMOS process for floating gate field-effect transistors in bioelectronic applications

Sensors and actuators. B, Chemical, 2007-12, Vol.128 (1), p.208-217

2007

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Giant mesoscopic photoconductance fluctuations in Ge/Si quantum dot system

Applied physics letters, 2011-04, Vol.98 (14)

2011

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N-Channel field-effect transistors with floating gates for extracellular recordings

Biosensors & bioelectronics, 2006-01, Vol.21 (7), p.1037-1044

2006

Volltextzugriff (PDF)

Top contacts for vertical double-gate MOSFETs

Microelectronic engineering, 2002-10, Vol.64 (1), p.465-471

2002

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Giant mesoscopic photoconductance fluctuations in Ge/Si quantumdot system

Applied physics letters, 2011-04, Vol.98 (14), p.142101-142101-3

2011

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Wet low-temperature gate oxidation for nanoscale vertical field-effect transistors

Physica. E, Low-dimensional systems & nanostructures, 2003-07, Vol.19 (1), p.18-22

2003

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Band offsets at heavily strained III - V interfaces

Journal of physics. D, Applied physics, 1997-05, Vol.30 (10), p.1436-1441

1997

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Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth

Solid-state electronics, 1999-03, Vol.43 (3), p.529-535

1999

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Hall effect measurements on InAs nanowires

Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement

Integrated high pressure microhydraulic actuation and control for surgical instruments

n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

Optimized marker definition for high overlay accuracy e-beam lithography

Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface

Etching titanium nitride gate stacked on high-κ dielectric

Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET

Integration of MOSFETs with SiGe dots as stressor material

Growth of Ge dots on templated Si substrates with diffusion-altered holes

Gate-controlled quantum collimation in nanocolumn resonant tunnelling transistors

Fabrication and control of miniature McKibben actuators

Turning the world vertical : MOSFETs with current flow perpendicular to the wafer surface: From surface science to nanoscale devices

Patterning of 25-nm-wide silicon webs with an aspect ratio of 13

Photo-induced conductance fluctuations in mesoscopic Ge/Si systems with quantum dots

Fabrication of silicon webs in the decananometre range

Advanced CMOS process for floating gate field-effect transistors in bioelectronic applications

Giant mesoscopic photoconductance fluctuations in Ge/Si quantum dot system

N-Channel field-effect transistors with floating gates for extracellular recordings

Top contacts for vertical double-gate MOSFETs

Giant mesoscopic photoconductance fluctuations in Ge/Si quantumdot system

Wet low-temperature gate oxidation for nanoscale vertical field-effect transistors

Band offsets at heavily strained III - V interfaces

Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth

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