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Nanometre-scale electronics with III–V compound semiconductors

Nature (London), 2011-11, Vol.479 (7373), p.317-323

del Alamo, Jesús A.

2011

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140

2011

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III–V compound semiconductor transistors—from planar to nanowire structures

MRS bulletin, 2014-08, Vol.39 (8), p.668-677

2014

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Protonic solid-state electrochemical synapse for physical neural networks

Nature communications, 2020-06, Vol.11 (1), p.3134-3134, Article 3134

2020

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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-04, Vol.29 (4), p.287-289

2008

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CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte for Analog Deep Learning

Nano letters, 2021-07, Vol.21 (14), p.6111-6116

2021

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Electrochemical Ionic Synapses: Progress and Perspectives

Advanced materials (Weinheim), 2023-09, Vol.35 (37), p.e2205169-e2205169

2023

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Changes to the Editorial Board

IEEE electron device letters, 2021-04, Vol.42 (4), p.460-460

Del Alamo, Jesus A. Del

2021

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On the Imprint Mechanism of Thin-Film Hf₀.₅Zr₀.₅O₂ Ferroelectrics

IEEE transactions on electron devices, 2024-11, Vol.71 (11), p.6620-6626

2024

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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901

2009

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Nanosecond protonic programmable resistors for analog deep learning

Science (American Association for the Advancement of Science), 2022-07, Vol.377 (6605), p.539-543

2022

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30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

IEEE electron device letters, 2008-08, Vol.29 (8), p.830-833

2008

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Stability and Reliability of Lateral GaN Power Field-Effect Transistors

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4578-4590

2019

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Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2142-2147

2017

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Sub-10-nm Diameter Vertical Nanowire p-Type GaSb/InAsSb Tunnel FETs

IEEE electron device letters, 2022-06, Vol.43 (6), p.846-849

2022

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Sampling alternative conformational states of transporters and receptors with AlphaFold2

eLife, 2022-03, Vol.11

2022

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Linear energy amplification in turbulent channels

Journal of fluid mechanics, 2006-07, Vol.559, p.205-213

2006

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Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

IEEE electron device letters, 2014-05, Vol.35 (5), p.521-523

2014

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Sub-10-nm Fin-Width Self-Aligned InGaAs FinFETs

IEEE electron device letters, 2016-09, Vol.37 (9), p.1104-1107

2016

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In Situ Thermal Atomic Layer Etching for Sub‑5 nm InGaAs Multigate MOSFETs

Nano letters, 2019-08, Vol.19 (8), p.5159-5166

2019

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Hydrothermal liquefaction of organic resources in biotechnology: how does it work and what can be achieved?

Applied microbiology and biotechnology, 2019-01, Vol.103 (2), p.673-684

2019

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Sub-Thermal Subthreshold Characteristics in Top-Down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs

IEEE electron device letters, 2017-07, Vol.38 (7), p.855-858

2017

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Three-dimensional quantification of cellular traction forces and mechanosensing of thin substrata by fourier traction force microscopy

PloS one, 2013-09, Vol.8 (9), p.e69850-e69850

2013

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Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2188-2195

2022

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Nanometre-scale electronics with III–V compound semiconductors

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

III–V compound semiconductor transistors—from planar to nanowire structures

Protonic solid-state electrochemical synapse for physical neural networks

Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

CMOS-Compatible Protonic Programmable Resistor Based on Phosphosilicate Glass Electrolyte for Analog Deep Learning

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

Electrochemical Ionic Synapses: Progress and Perspectives

Changes to the Editorial Board

On the Imprint Mechanism of Thin-Film Hf₀.₅Zr₀.₅O₂ Ferroelectrics

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Nanosecond protonic programmable resistors for analog deep learning

30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Unified Mechanism for Positive- and Negative-Bias Temperature Instability in GaN MOSFETs

Sub-10-nm Diameter Vertical Nanowire p-Type GaSb/InAsSb Tunnel FETs

Sampling alternative conformational states of transporters and receptors with AlphaFold2

Linear energy amplification in turbulent channels

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Sub-10-nm Fin-Width Self-Aligned InGaAs FinFETs

In Situ Thermal Atomic Layer Etching for Sub‑5 nm InGaAs Multigate MOSFETs

Hydrothermal liquefaction of organic resources in biotechnology: how does it work and what can be achieved?

Sub-Thermal Subthreshold Characteristics in Top-Down InGaAs/InAs Heterojunction Vertical Nanowire Tunnel FETs

Three-dimensional quantification of cellular traction forces and mechanosensing of thin substrata by fourier traction force microscopy

Scaling of GaSb/InAs Vertical Nanowire Esaki Diodes Down to Sub-10-nm Diameter

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