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Optical Properties of Quasi-Bulk Gallium-Nitride Crystals with Highly Oriented Texture Structure

Semiconductors (Woodbury, N.Y.), 2021-07, Vol.55 (7), p.617-620

2021

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Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement

Semiconductors (Woodbury, N.Y.), 2023-05, Vol.57 (5), p.263-267

2023

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Comparative Analysis of the Electroluminescence Efficiency in Type-I and Type-II Heterostructures Based on III–V Narrow-Gap Compounds

Semiconductors (Woodbury, N.Y.), 2022-02, Vol.56 (2), p.43-49

2022

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Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction

Semiconductors (Woodbury, N.Y.), 2021-03, Vol.55 (3), p.354-358

2021

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Surface & coatings technology, 2020-06, Vol.392, p.1-5, Article 125760

2020

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Study of the Current–Voltage Characteristics of InAsSb-Based LED Heterostructures in the 4.2–300 K Temperature Range

Semiconductors (Woodbury, N.Y.), 2021-06, Vol.55 (6), p.557-561

2021

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Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (12), p.989-994

2021

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Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.428-433

2019

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Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe

Journal of applied physics, 2022-10, Vol.132 (15)

2022

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HVPE homo-epitaxial growth of GaN on porous substrates

CrystEngComm, 2013-01, Vol.15 (18), p.364-3646

2013

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Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers

Technical physics, 2019-10, Vol.64 (10), p.1509-1514

2019

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Determination of the parameters of diffusion and unsteady filament currents in a cylindrical chalcogenide glassy semiconductor

Journal of physics. Conference series, 2020-03, Vol.1482 (1), p.12005

2020

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Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (4), p.345-348

2024

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Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (12), p.1651-1655

2019

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Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Journal of electronic materials, 2020-08, Vol.49 (8), p.4642-4646

2020

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Numerical simulations of power characteristics and emission spectra of InAs(Sb)-based mid-infrared LED structures

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12176

2020

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Optical and structural studies of Hg0.7Cd0.3Te samples grown by various methods

Journal of physics. Conference series, 2021, Vol.2103 (1)

2021

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Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. II. Discrete Mobility Spectrum Analysis

Russian physics journal, 2023-02, Vol.65 (10), p.1716-1731

2023

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Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films

Semiconductors (Woodbury, N.Y.), 2024-02, Vol.58 (2), p.176-179

2024

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Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. I. A Review of Mobility Spectrum Analysis Methods

Russian physics journal, 2023, Vol.65 (9), p.1538-1554

2023

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Luminescence of HgCdTe- and InAsSb-based quantum-well heterostructures

Journal of physics. Conference series, 2018-12, Vol.1135 (1), p.12072

2018

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Temperature dependence of the optical and electrical properties of long-wavelength InAsSb-based LED heterostructures

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12168

2020

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Emission properties of textured gallium nitride with high density of stacking faults

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12064

2020

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Variable-temperature luminescence studies of InAsSb-based LED heterostructures emitting beyond 5 μm

Journal of physics. Conference series, 2020-03, Vol.1482 (1), p.12023

2020

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Carrier lifetime in InAs(Ga,Sb,P) heterostructures

Journal of physics. Conference series, 2018-06, Vol.1038 (1), p.12097

2018

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Optical Properties of Quasi-Bulk Gallium-Nitride Crystals with Highly Oriented Texture Structure

Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement

Comparative Analysis of the Electroluminescence Efficiency in Type-I and Type-II Heterostructures Based on III–V Narrow-Gap Compounds

Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction

Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing

Study of the Current–Voltage Characteristics of InAsSb-Based LED Heterostructures in the 4.2–300 K Temperature Range

Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer

Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies

Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe

HVPE homo-epitaxial growth of GaN on porous substrates

Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers

Determination of the parameters of diffusion and unsteady filament currents in a cylindrical chalcogenide glassy semiconductor

Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te

Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor

Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8

Numerical simulations of power characteristics and emission spectra of InAs(Sb)-based mid-infrared LED structures

Optical and structural studies of Hg0.7Cd0.3Te samples grown by various methods

Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. II. Discrete Mobility Spectrum Analysis

Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films

Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. I. A Review of Mobility Spectrum Analysis Methods

Luminescence of HgCdTe- and InAsSb-based quantum-well heterostructures

Temperature dependence of the optical and electrical properties of long-wavelength InAsSb-based LED heterostructures

Emission properties of textured gallium nitride with high density of stacking faults

Variable-temperature luminescence studies of InAsSb-based LED heterostructures emitting beyond 5 μm

Carrier lifetime in InAs(Ga,Sb,P) heterostructures

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