UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)

Semiconductors (Woodbury, N.Y.), 2022-12, Vol.56 (13), p.472-486

2022

Volltextzugriff (PDF)

Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics

Semiconductors (Woodbury, N.Y.), 2021-12, Vol.55 (13), p.1055-1062

2021

Volltextzugriff (PDF)

High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.122-126

2020

Volltextzugriff (PDF)

Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra

Technical physics letters, 2024-02, Vol.50 (2), p.171-173

2024

Volltextzugriff (PDF)

Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Semiconductors (Woodbury, N.Y.), 2016, Vol.50 (1), p.103-105

2016

Volltextzugriff (PDF)

Advances in Modern Information Technologies for Data Analysis in CRYO-EM and XFEL Experiments

Crystallography reports, 2020-11, Vol.65 (6), p.1081-1092

2020

Volltextzugriff (PDF)

Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET

Semiconductors (Woodbury, N.Y.), 2016-06, Vol.50 (6), p.824-827

2016

Volltextzugriff (PDF)

On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen

Semiconductors (Woodbury, N.Y.), 2014-12, Vol.48 (12), p.1581-1585

2014

Volltextzugriff (PDF)

Limits of Detection of Chemical Elements in an Aqueous Aerosol in Filament-Induced Breakdown Spectroscopy

Journal of applied spectroscopy, 2021-05, Vol.88 (2), p.337-342

2021

Volltextzugriff (PDF)

Measurement of the Field Map in Pulsed Bending Accelerating Magnets Using Hall Probes

Instruments and experimental techniques (New York), 2024-04, Vol.67 (2), p.320-331

2024

Volltextzugriff (PDF)

Conductivity of Hafnium Oxide Films Obtained by Electron-Beam Sputtering

Moscow University physics bulletin, 2024-02, Vol.79 (1), p.64-68

2024

Volltextzugriff (PDF)

Application of High-Frequency EPR Spectroscopy for the Identification and Separation of Nitrogen and Vanadium Sites in Silicon Carbide Crystals and Heterostructures

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.150-156

2020

Volltextzugriff (PDF)

The Born Rule and Time-Reversal Symmetry of Quantum Equations of Motion

Foundations of physics, 2016-07, Vol.46 (7), p.845-851

Ilyin, Aleksey V.

2016

Volltextzugriff (PDF)

Symmetries and invariant solutions of the one-dimensional Boltzmann equation for inelastic collisions

Theoretical and mathematical physics, 2016-02, Vol.186 (2), p.183-191

Ilyin, O. V.

2016

Volltextzugriff (PDF)

Investigation of Eco-Friendly Gas Mixture for Gas Discharge Particle Detectors

Physics of atomic nuclei, 2020-12, Vol.83 (10), p.1449-1458

2020

Volltextzugriff (PDF)

On the Program of Russian Research in the Field of Controlled Thermonuclear Fusion and Plasma Technologies

Plasma physics reports, 2021-11, Vol.47 (11), p.1085-1091

2021

Volltextzugriff (PDF)

Commissioning the First Free Electron Laser Based on a Variable-Period Undulator

Physics of particles and nuclei letters, 2023-08, Vol.20 (4), p.897-900

2023

Volltextzugriff (PDF)

Symmetries, the current function, and exact solutions for Broadwell’s two-dimensional stationary kinetic model

Theoretical and mathematical physics, 2014-06, Vol.179 (3), p.679-688

Ilyin, O. V.

2014

Volltextzugriff (PDF)

A Two-Channel Laser Monitor for Observing Processes of High-Temperature Combustion of Metal Nanopowders

Technical physics letters, 2021-04, Vol.47 (4), p.344-347

2021

Volltextzugriff (PDF)

Study of Inelastic () Reaction with Be and Zr Nuclei at 1 GeV

Physics of atomic nuclei, 2020, Vol.83 (3), p.431-441

2020

Volltextzugriff (PDF)

Magnetic propeller effect in the spectra of young stars

Astronomy letters, 2015-08, Vol.41 (8), p.407-416

2015

Volltextzugriff (PDF)

Comparison of Techniques for Multielement Analysis of Water Aerosol Composition Based on the Spectral Analysis of a Laser Plasma

Atmospheric and oceanic optics, 2021-09, Vol.34 (5), p.406-410

2021

Volltextzugriff (PDF)

Scaling of differential cross section ratios in inelastic (p, p′) reaction with nuclei at 1 GeV

JETP letters, 2017-07, Vol.106 (2), p.69-72

2017

Volltextzugriff (PDF)

Geant4 Study for Geometry of Quartz Fiber Luminometer at CMS HL-LHC

Physics of particles and nuclei, 2023-08, Vol.54 (4), p.725-728

2023

Volltextzugriff (PDF)

Observation of Circumstellar Gas in the Neighborhood of RZ Psc

Astrophysics, 2013-12, Vol.56 (4), p.453-460

2013

Volltextzugriff (PDF)

1 – 25 von 57

Suche als RSS-Feed

Aktive Filter

ThemaHeavy Ions

ThemaPhysics And Astronomy

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(56)
Mit Volltextzugriff
(57)

Publikationsform

Artikel
(57)

Sprache

Englisch
(57)

Erscheinungsjahr

n.n

Thema

14 weitere anzeigen...

Weniger anzeigen...

Kollektion

Springer Nature
(57)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(50)
IngentaConnect Journals
(28)
Journals@Ovid Full Text
(13)
EZB Electronic Journals Library
(1)

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)

Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics

High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel

Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra

Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide

Advances in Modern Information Technologies for Data Analysis in CRYO-EM and XFEL Experiments

Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET

On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen

Limits of Detection of Chemical Elements in an Aqueous Aerosol in Filament-Induced Breakdown Spectroscopy

Measurement of the Field Map in Pulsed Bending Accelerating Magnets Using Hall Probes

Conductivity of Hafnium Oxide Films Obtained by Electron-Beam Sputtering

Application of High-Frequency EPR Spectroscopy for the Identification and Separation of Nitrogen and Vanadium Sites in Silicon Carbide Crystals and Heterostructures

The Born Rule and Time-Reversal Symmetry of Quantum Equations of Motion

Symmetries and invariant solutions of the one-dimensional Boltzmann equation for inelastic collisions

Investigation of Eco-Friendly Gas Mixture for Gas Discharge Particle Detectors

On the Program of Russian Research in the Field of Controlled Thermonuclear Fusion and Plasma Technologies

Commissioning the First Free Electron Laser Based on a Variable-Period Undulator

Symmetries, the current function, and exact solutions for Broadwell’s two-dimensional stationary kinetic model

A Two-Channel Laser Monitor for Observing Processes of High-Temperature Combustion of Metal Nanopowders

Study of Inelastic () Reaction with Be and Zr Nuclei at 1 GeV

Magnetic propeller effect in the spectra of young stars

Comparison of Techniques for Multielement Analysis of Water Aerosol Composition Based on the Spectral Analysis of a Laser Plasma

Scaling of differential cross section ratios in inelastic (p, p′) reaction with nuclei at 1 GeV

Geant4 Study for Geometry of Quartz Fiber Luminometer at CMS HL-LHC

Observation of Circumstellar Gas in the Neighborhood of RZ Psc

Aktive Filter

Suchergebnisse filtern